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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Compact plastic SOT-23 PNP transistor Doeshare SS8550 designed for general
China Compact plastic SOT-23 PNP transistor Doeshare SS8550 designed for general

  1. China Compact plastic SOT-23 PNP transistor Doeshare SS8550 designed for general

Compact plastic SOT-23 PNP transistor Doeshare SS8550 designed for general

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 300mW
Transition frequency(fT) 100MHz
type PNP
Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 25V
Description 300mW PNP 1.5A 25V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # SS8550
Package SOT-23
Model Number SS8550

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 300mW Transition frequency(fT) 100MHz
type PNP Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 25V Description 300mW PNP 1.5A 25V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # SS8550 Package SOT-23
Model Number SS8550

Product Overview

The SS8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed for general-purpose applications. It offers a power dissipation of 300mW and is characterized by high stability and reliability. This transistor is complementary to the S8050. Its small outline plastic package makes it suitable for surface mounting.

Product Attributes

  • Brand: DOESHARE (implied by the document source)
  • Package Type: SOT-23 Plastic-Encapsulated Transistor
  • Material: Plastic
  • Certifications: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Marking: Y2

Technical Specifications

Parameter Symbol Test Condition Value Unit
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -1500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55-+150
Thermal resistance From junction to ambient RJA 417 /W
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100uA, IC=0 -5 V
Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA
Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA
Emitter cut-off current IEBO VEB=-3V, IC=0 -100 nA
DC current gain hFE(1) VCE=-1V, IC=-100mA 120 - 400
DC current gain hFE(2) VCE=-1V, IC=-800mA 50
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.60 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.20 V
Transition frequency fT VCE=-1V, IC=-10mA 100 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF

hFE(1) Classification

RANK RANGE
L 120-200
H 200-350
J 300-400

SOT-23 PACKAGE OUTLINE

Plastic surface mounted package. Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs.


2411220031_Doeshare-SS8550_C2931718.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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