| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 150MHz |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 150MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | S9014 |
| Package | SOT-23 |
| Model Number | S9014 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 150MHz |
| type | NPN | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 150MHz 0.2W Surface Mount SOT-23 | Mfr. Part # | S9014 |
| Package | SOT-23 | Model Number | S9014 |
The S9014 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features a VCBO of 50V and an IC of 100mA, with a power dissipation of 200mW. This transistor is designed for high stability and reliability, serving as a complementary component to the S9015. Its small outline package makes it suitable for various electronic applications.
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||
| Collector-Base Voltage | VCBO | 50 | V | Ratings at 25 ambient temperature unless otherwise specified. |
| Collector-Emitter Voltage | VCEO | 45 | V | Ratings at 25 ambient temperature unless otherwise specified. |
| Emitter-Base Voltage | VEBO | 5 | V | Ratings at 25 ambient temperature unless otherwise specified. |
| Collector Current-Continuous | IC | 100 | mA | Ratings at 25 ambient temperature unless otherwise specified. |
| Collector Power Dissipation | PC | 200 | mW | Ratings at 25 ambient temperature unless otherwise specified. |
| Junction Temperature | Tj | 150 | Ratings at 25 ambient temperature unless otherwise specified. | |
| Storage Temperature | TSTG | -55~150 | Ratings at 25 ambient temperature unless otherwise specified. | |
| Thermal Resistance (Junction to Ambient) | RJA | 625 | /W | Ratings at 25 ambient temperature unless otherwise specified. |
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC=100uA, IE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V | IC=0.1mA, IB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100uA, IC=0 |
| Collector cut-off current | ICBO | 100 | nA | VCB=50V, IE=0 |
| Emitter cut-off current | IEBO | 100 | nA | VEB=3V, IC=0 |
| DC current gain | hFE | 200 - 1000 | VCE=5V, IC=1mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.30 | V | IC=100mA, IB=5mA |
| Base-emitter saturation voltage | VBE(sat) | 1.00 | V | IC=100mA, IB=5mA |
| Transition frequency | fT | 150 | MHz | VCE=5V, IC=10mA, f=30MHz |
| hFE Classification | ||||
| Rank | Range | |||
| L | 200~450 | |||
| H | 450~1000 | |||
| Symbol | Dimensions (mm) | Symbol | Dimensions (mm) | ||
|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | ||
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 (TYP) | |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 (REF) | |
| D | 2.800 | 3.000 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 | |
| 0.80 | 2.02 | 1.90 | 0.60 | ||
Note:
1. Controlling dimension: in millimeters.
2. General tolerance: 0.05mm.
3. The pad layout is for reference only.
4. Unit: mm.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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