Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 200MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 350V |
| Description | Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 200mW Surface Mount TO-236-3 |
| Mfr. Part # | MMBT6517 |
| Package | TO-236-3 |
| Model Number | MMBT6517 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 200MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 350V | Description | Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 200mW Surface Mount TO-236-3 |
| Mfr. Part # | MMBT6517 | Package | TO-236-3 |
| Model Number | MMBT6517 |
MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.
| Parameter | Symbol | Value | Unit | Min. | Max. |
| Absolute Maximum Ratings (Ta = 25 OC) | |||||
| Collector Base Voltage | VCBO | 350 | V | ||
| Collector Emitter Voltage | VCEO | 350 | V | ||
| Emitter Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 500 | mA | ||
| Power Dissipation | Ptot | 200 | mW | ||
| Junction Temperature | Tj | 150 | OC | ||
| Storage Temperature Range | Tstg | - 55 to + 150 | OC | ||
| Characteristics at Ta = 25 OC | |||||
| DC Current Gain at VCE = 10 V, IC = 1 mA | hFE | 20 | |||
| DC Current Gain at VCE = 10 V, IC = 10 mA | hFE | 30 | 200 | ||
| DC Current Gain at VCE = 10 V, IC = 30 mA | hFE | 30 | 200 | ||
| DC Current Gain at VCE = 10 V, IC = 50 mA | hFE | 20 | |||
| DC Current Gain at VCE = 10 V, IC = 100 mA | hFE | 15 | |||
| Collector Base Cutoff Current at VCB = 250 V | ICBO | nA | - 50 | ||
| Emitter Base Cutoff Current at VEB = 5 V | IEBO | nA | - 50 | ||
| Collector Base Breakdown Voltage at IC = 100 A | V(BR)CBO | 350 | V | - | |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 350 | V | - | |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 6 | V | - | |
| Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VCE(sat) | V | 0.3 | ||
| Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VCE(sat) | V | 0.35 | ||
| Collector Emitter Saturation Voltage at IC = 30 mA, IB = 3 mA | VCE(sat) | V | 0.5 | ||
| Collector Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA | VCE(sat) | V | 1 | ||
| Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VBE(sat) | V | 0.75 | ||
| Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VBE(sat) | V | 0.85 | ||
| Base Emitter Saturation Voltage at IC = 30 mA, IB = 3 mA | VBE(sat) | V | 0.9 | ||
| Base Emitter On Voltage at VCE = 10 V, IC = 100 mA | VBE(on) | V | 2 | ||
| Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 20 MHz | fT | MHz | 40 | 200 | |
| Collector Output Capacitance at VCB = 20 V, f = 1 MHz | Cob | pF | 6 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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