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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Doeshare MMBT4403 PNP Switching Transistor Featuring 300mW Power Dissipation and
China Doeshare MMBT4403 PNP Switching Transistor Featuring 300mW Power Dissipation and

  1. China Doeshare MMBT4403 PNP Switching Transistor Featuring 300mW Power Dissipation and

Doeshare MMBT4403 PNP Switching Transistor Featuring 300mW Power Dissipation and

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 300mW
Transition frequency(fT) 200MHz
type PNP
Number 1 PNP
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 40V
Description 300mW PNP 600mA 40V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # MMBT4403
Package SOT-23
Model Number MMBT4403

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 300mW Transition frequency(fT) 200MHz
type PNP Number 1 PNP
Current - Collector(Ic) 600mA Collector - Emitter Voltage VCEO 40V
Description 300mW PNP 600mA 40V SOT-23 Single Bipolar Transistors RoHS Mfr. Part # MMBT4403
Package SOT-23 Model Number MMBT4403

Product Overview

MMBT4403 is a PNP Plastic-Encapsulate Switching Transistor designed for general-purpose applications. It offers high stability and reliability, housed in a compact SOT-23 small outline plastic package. With a power dissipation of 300mW, this transistor is suitable for various switching applications where space and performance are critical.

Product Attributes

  • Brand: MMBT4403 (Implied from product name)
  • Package Type: SOT-23 Plastic-Encapsulate
  • Transistor Type: PNP Switching Transistor
  • Certifications: Epoxy UL: 94V-0
  • Marking: 2T

Technical Specifications

Parameter Symbol Test Condition Unit Min Max
Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)
Collector-Base Voltage VCBO V -40
Collector-Emitter Voltage VCEO V -40
Emitter-Base Voltage VEBO V -5
Collector Current-Continuous IC mA -600
Collector Power Dissipation PC mW 300
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Thermal resistance From junction to ambient RJA /W 417
Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified).
Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 V -40
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 V -40
Emitter-base breakdown voltage V(BR)EBO IE=-100uA, IC=0 V -5
Collector cut-off current ICBO VCB=-35V, IE=0 nA -100
Collector cut-off current ICEX VCE=-35V, VEB(off)=-0.4V nA -100
Emitter cut-off current IEBO VEB=-4V, IC=0 nA -100
DC current gain hFE(1) VCE=-1V, IC=-0.1mA 30
hFE(2) VCE=-1V, IC=-1mA 60
hFE(3) VCE=-1V, IC=-10mA 100
hFE(4) VCE=-2V, IC=-150mA 100 300
DC current gain hFE(5) VCE=-2V, IC=-500mA 20
Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA V -0.40
VCE(sat) IC=-500mA, IB=-50mA V -0.75
Base-emitter saturation voltage VBE(sat) IC=-150mA, IB=-15mA V -0.95
VBE(sat) IC=-500mA, IB=-50mA V -1.30
Transition frequency fT VCE=-10V, IC=-20mA,f=100MHz MHz 200
Switching Time Delay time td VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA nS 15
Rise time tr nS 20
Switching Time Storage time ts VCC=-30V, IC=-150mA, IB1=IB2=-15mA nS 225
Fall time tf nS 60

2411220144_Doeshare-MMBT4403_C2931714.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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