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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial
China NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial

  1. China NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial

NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial

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Current - Collector Cutoff 1uA
Emitter-Base Voltage(Vebo) 3V
Pd - Power Dissipation 200mW
Transition frequency(fT) 3GHz
type NPN
Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 12V
Description Bipolar (BJT) Transistor NPN 12V 100mA 3GHz 200mW Surface Mount SOT-523
Mfr. Part # MMBTSC3356T-3G
Package SOT-523
Model Number MMBTSC3356T-3G

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 1uA Emitter-Base Voltage(Vebo) 3V
Pd - Power Dissipation 200mW Transition frequency(fT) 3GHz
type NPN Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 12V Description Bipolar (BJT) Transistor NPN 12V 100mA 3GHz 200mW Surface Mount SOT-523
Mfr. Part # MMBTSC3356T-3G Package SOT-523
Model Number MMBTSC3356T-3G

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three DC current gain groups (Q, R, and S) and is housed in a plastic surface-mounted SOT-523 package with 3 leads.

Product Attributes

  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package Type: Plastic surface mounted package; 3 leads SOT-523
  • Transistor Type: NPN

Technical Specifications

Parameter Symbol Group Q Group R Group S Unit Conditions
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage VCBO 20 V
Collector Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 3 V
Collector Current IC 100 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 OC
Storage Temperature Range TS -65 to +150 OC
Characteristics (Ta = 25 OC)
DC Current Gain hFE 50 80 125 - VCE = 10 V, IC = 20 mA
Collector Cutoff Current ICBO 1 A VCB = 10 V
Emitter Cutoff Current IEBO 1 A VEB = 1 V
Gain Bandwidth Product fT 3 - GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre 1) 0.55 1 pF VCB = 10 V, f = 1 MHz
Noise Figure NF 1.1 2 dB VCE = 10 V, IC = 7 mA, f = 1 GHz

1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

HFE MARKING: Q: R23, R: R24, S: R25


2410121546_CBI-MMBTSC3356T-3G_C21714145.pdf

Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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