Beijing Silk Road Enterprise Management Services Co.,LTD
Products
Manufacturer of a wide range of products which include WM8231GEFL/RV,71M6515H-IGTW/F,IRFH5210TRPBF,etc
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| Packaging : | Reel |
| Product Category : | Analog Front End - AFE |
| Manufacturer : | Cirrus Logic |
| Description | Analog Front End - AFE IC 70MHz 16-Bit 3-Ch AFE LVDS TG |
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| Product Category : | Analog Front End - AFE |
| Mounting Style : | SMD/SMT |
| Package / Case : | LQFP-64 |
| Packaging : | Tube |
| Series : | 71M6515H |
| Type : | Metering AFE |
| Manufacturer : | Maxim Integrated |
| Description | Analog Front End - AFE Energy Meter IC |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Id - Continuous Drain Current : | 10 A |
| Mounting Style : | SMD/SMT |
| Minimum Operating Temperature : | - 55 C |
| Package / Case : | PQFN-8 |
| Maximum Operating Temperature : | + 150 C |
| Channel Mode : | Enhancement |
| Vds - Drain-Source Breakdown Voltage : | 100 V |
| Packaging : | Reel |
| Vgs th - Gate-Source Threshold Voltage : | 2 V to 4 V |
| Product Category : | MOSFET |
| Rds On - Drain-Source Resistance : | 14.9 mOhms |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 20 V |
| Qg - Gate Charge : | 40 nC |
| Manufacturer : | Infineon Technologies |
| Description | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | MOSFET |
| Mounting Style : | Through Hole |
| Package / Case : | TO-220-3 |
| Vds - Drain-Source Breakdown Voltage : | 500 V |
| Packaging : | Tube |
| Vgs th - Gate-Source Threshold Voltage : | 4 V |
| Id - Continuous Drain Current : | 13.86 A |
| Rds On - Drain-Source Resistance : | 130 mOhms |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 25 V |
| Qg - Gate Charge : | 62.5 nC |
| Manufacturer : | STMicroelectronics |
| Description | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET |
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| Technology : | Si |
| Product Category : | MOSFET |
| Tradename : | TrenchFET |
| Package / Case : | SOT-23-3 |
| Packaging : | Reel |
| Manufacturer : | Vishay Semiconductors |
| Description | MOSFET 100V 1.5A 1.25W 250mohm @ 10V |
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| Technology : | Si |
| Product Category : | MOSFET |
| Tradename : | TrenchFET |
| Package / Case : | PowerPAK-SO-8 |
| Packaging : | Reel |
| Manufacturer : | Vishay Semiconductors |
| Description | MOSFET 250V 3.8A 5.2W 155mohm @ 10V |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Id - Continuous Drain Current : | 100 A |
| Mounting Style : | SMD/SMT |
| Tradename : | OptiMOS |
| Minimum Operating Temperature : | - 55 C |
| Package / Case : | TDSON-8 |
| Maximum Operating Temperature : | + 150 C |
| Channel Mode : | Enhancement |
| Vds - Drain-Source Breakdown Voltage : | 40 V |
| Packaging : | Reel |
| Vgs th - Gate-Source Threshold Voltage : | 1.2 V |
| Product Category : | MOSFET |
| Rds On - Drain-Source Resistance : | 1.3 mOhms |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 20 V |
| Qg - Gate Charge : | 150 nC |
| Manufacturer : | Infineon Technologies |
| Description | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
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| Transistor Polarity : | P-Channel |
| Technology : | Si |
| Id - Continuous Drain Current : | - 550 mA |
| Mounting Style : | SMD/SMT |
| Minimum Operating Temperature : | - 55 C |
| Package / Case : | SOT-26-6 |
| Maximum Operating Temperature : | + 150 C |
| Channel Mode : | Enhancement |
| Vds - Drain-Source Breakdown Voltage : | - 20 V |
| Packaging : | Reel |
| Product Category : | MOSFET |
| Number of Channels : | 2 Channel |
| Vgs - Gate-Source Voltage : | 8 V |
| Rds On - Drain-Source Resistance : | 900 mOhms |
| Manufacturer : | Diodes Incorporated |
| Description | MOSFET 500mW -20Vdss |
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| Packaging : | Reel |
| Technology : | Si |
| Product Category : | MOSFET |
| Tradename : | TrenchFET |
| Manufacturer : | Vishay Semiconductors |
| Description | MOSFET 100V .085ohm@10V 12.1A Dual N-Ch |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | MOSFET |
| Mounting Style : | Through Hole |
| Tradename : | Polar2 HiPerFET |
| Minimum Operating Temperature : | - 55 C |
| Package / Case : | TO-247-3 |
| Maximum Operating Temperature : | + 150 C |
| Vds - Drain-Source Breakdown Voltage : | 500 V |
| Packaging : | Tube |
| Id - Continuous Drain Current : | 52 A |
| Number of Channels : | 1 Channel |
| Vgs - Gate-Source Voltage : | 30 V |
| Rds On - Drain-Source Resistance : | 120 mOhms |
| Manufacturer : | IXYS |
| Description | MOSFET PolarP2 Power MOSFET |
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