Products
Manufacturer of a wide range of products which include WM8231GEFL/RV,71M6515H-IGTW/F,BF992,215,etc
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| Packaging : | Reel |
| Product Category : | Analog Front End - AFE |
| Manufacturer : | Cirrus Logic |
| Description | Analog Front End - AFE IC 70MHz 16-Bit 3-Ch AFE LVDS TG |
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| Product Category : | Analog Front End - AFE |
| Mounting Style : | SMD/SMT |
| Package / Case : | LQFP-64 |
| Packaging : | Tube |
| Series : | 71M6515H |
| Type : | Metering AFE |
| Manufacturer : | Maxim Integrated |
| Description | Analog Front End - AFE Energy Meter IC |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Mounting Style : | SMD/SMT |
| Package / Case : | SOT-143B-4 |
| Maximum Operating Temperature : | + 150 C |
| Vds - Drain-Source Breakdown Voltage : | 20 V, 20 V |
| Packaging : | Reel |
| Id - Continuous Drain Current : | 40 mA, 40 mA |
| Rds On - Drain-Source Resistance : | - |
| Manufacturer : | NXP Semiconductors |
| Description | RF MOSFET Transistors N-CH DUAL GATE 20V VHF |
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| Packaging : | Reel |
| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Package / Case : | SOT-143-4 |
| Manufacturer : | Infineon Technologies |
| Description | RF MOSFET Transistors N-CH 12 V 30 mA |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Mounting Style : | SMD/SMT |
| Package / Case : | Case 211-11 |
| Maximum Operating Temperature : | + 200 C |
| Vds - Drain-Source Breakdown Voltage : | 65 V |
| Packaging : | Tray |
| Id - Continuous Drain Current : | 13 A |
| Manufacturer : | ASI / Advanced Semiconductor, Inc. |
| Description | RF MOSFET Transistors RF Transistor |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Mounting Style : | SMD/SMT |
| Gain : | 18.8 dB |
| Package / Case : | NI-360 |
| Output Power : | 60 W |
| Vds - Drain-Source Breakdown Voltage : | 65 V |
| Packaging : | Tray |
| Id - Continuous Drain Current : | 4.25 A |
| Manufacturer : | ASI / Advanced Semiconductor, Inc. |
| Description | RF MOSFET Transistors RF Transistor |
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| Transistor Polarity : | N-Channel |
| Product Category : | RF MOSFET Transistors |
| Mounting Style : | Through Hole |
| Gain : | 13 dB |
| Output Power : | 90 W |
| Package / Case : | TO-247-3 |
| Maximum Operating Temperature : | + 150 C |
| Vds - Drain-Source Breakdown Voltage : | 450 V |
| Technology : | Si |
| Id - Continuous Drain Current : | 9 A |
| Manufacturer : | Microsemi |
| Description | RF MOSFET Transistors RF MOSFET (VDMOS) |
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| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Manufacturer : | Microsemi |
| Description | RF MOSFET Transistors RF MOSFET (VDMOS) |
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| Transistor Polarity : | N-Channel |
| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Mounting Style : | Through Hole |
| Gain : | 13 dB |
| Output Power : | 90 W |
| Package / Case : | TO-247-3 |
| Maximum Operating Temperature : | + 150 C |
| Vds - Drain-Source Breakdown Voltage : | 450 V |
| Packaging : | Reel |
| Id - Continuous Drain Current : | 9 A |
| Manufacturer : | Microsemi |
| Description | RF MOSFET Transistors RF MOSFET (VDMOS) |
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| Technology : | Si |
| Product Category : | RF MOSFET Transistors |
| Manufacturer : | Microsemi |
| Description | RF MOSFET Transistors RF MOSFET (VDMOS) |
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