Shanghai GaNova Electronic Information Co., Ltd.
Products
Manufacturer of a wide range of products which include Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System,150mm Rapid Thermal Annealing System With Three Sets Process Gases,0.001-100 ohm-cm Silicon Wafer P Type Bo...
MOQ:
Price:
| Payment Terms | T/T |
| Delivery Time | 3 month |
| Maximum product size | 8-inch and below wafers |
| Equipment dimensions | 970mm x 1450mm x 2024mm (width x depth x height) |
| Heating temperature range | Room temperature~~800 ℃ (thermocouple) 800 ℃~1250 ℃ (infrared pyrometer) |
| heating rate | 150 ℃/s bare wafer 20 ℃/s silicon carbide carrier |
| Temperature uniformity | ＜ 500 ℃, uniformity ≤ ± 5 ℃ ≥ 500 ℃, uniformity ≤ ± 1% |
| Temperature control repeatability | ±1℃ |
| Constant temperature duration | Programmable according to requirements |
| Brand Name | Ganova |
| Model Number | RTP-SA-8 |
| Place of Origin | China |
MOQ: 1
Price:
| Payment Terms | T/T |
| Delivery Time | 8-10week days |
| Product Name | Rapid Thermal Annealing System |
| Model | RTP-150RL |
| Maximum sample size | 150mm |
| Process gases | three sets |
| Software control system | RL900 |
| temperature control | Tube power PID |
| Brand Name | GaNova |
| Model Number | JDEQ-0002 |
| Place of Origin | Suzhou China |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Diameter | 2" |
| Grade | Prime |
| Growth Method | CZ |
| Orientation | <1-0-0>,<1-1-1>,<1-1-0> |
| Type/Dopant | P Type/Boron,N Type/Phos,N Type/As, N Type/Sb |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| TTV(μm) | Standard <10μm,Maximum Capabilities<5μm |
| Bow/Warp | Standard <40μm,Maximum Capabilities<20μm |
| Particle | <10@0.5μm; <10@0.3μm; <10@0.2μm; |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Growth Method | CZ |
| Diameter | 2" |
| Grade | Prime |
| Orientation | <1-0-0>,<1-1-1>,<1-1-0> |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Diameter | 2" |
| Grade | Prime |
| Growth Method | CZ |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| TTV(μm) | Standard <10μm,Maximum Capabilities<5μm |
| Bow/Warp | Standard <40μm,Maximum Capabilities<20μm |
| Particle | <10@0.5μm; <10@0.3μm; <10@0.2μm; |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Grade | Prime |
| Growth Method | CZ |
| Type/Dopant | P Type/Boron,N Type/Phos,N Type/As, N Type/Sb |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| TTV(μm) | Standard <10μm,Maximum Capabilities<5μm |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Type/Dopant | P Type/Boron,N Type/Phos,N Type/As, N Type/Sb |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| TTV(μm) | Standard <10 μm,Maximum Capabilities<5 μm |
| Bow/Warp | Standard <40 μm,Maximum Capabilities<20 μm |
| Particle | <10@0.5μm; <10@0.3μm; <10@0.2μm; |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-003 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Diameter | 2" |
| Grade | Prime |
| Growth Method | CZ |
| Orientation | <1-0-0>,<1-1-1>,<1-1-0> |
| Type/Dopant | P Type/Boron,N Type/Phos,N Type/As, N Type/Sb |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| TTV(μm) | Standard <10μm,Maximum Capabilities<5μm |
| Bow/Warp | Standard <40μm,Maximum Capabilities<20μm |
| Particle | <10@0.5μm; <10@0.3μm; <10@0.2μm; |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Diameter | 2" |
| Grade | Prime |
| Growth Method | CZ |
| Orientation | <1-0-0>,<1-1-1>,<1-1-0> |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
MOQ: 1
Price:
| Payment Terms | T/T |
| Supply Ability | 50000pcs/month |
| Delivery Time | 3-4 week days |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Diameter | 2" |
| Grade | Prime |
| Growth Method | CZ |
| Orientation | <1-0-0>,<1-1-1>,<1-1-0> |
| Type/Dopant | P Type/Boron,N Type/Phos,N Type/As, N Type/Sb |
| Thickness(μm) | 279 |
| Thickness Tolerance | Standard ± 25μm,Maximum Capabilities ± 5μm |
| Resistivity | 0.001-100 ohm-cm |
| Surface Finished | P/E,P/P,E/E,G/G |
| TTV(μm) | Standard <10μm,Maximum Capabilities<5μm |
| Bow/Warp | Standard <40μm,Maximum Capabilities<20μm |
| Particle | <10@0.5μm; <10@0.3μm; <10@0.2μm; |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDCD06-001-002 |
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