Shanghai GaNova Electronic Information Co., Ltd.
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Manufacturer of a wide range of products which include Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System,150mm Rapid Thermal Annealing System With Three Sets Process Gases,1'' AlN Aluminum Nitride Wafer 400um S /...
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Price:
| Payment Terms | T/T |
| Delivery Time | 3 month |
| Maximum product size | 8-inch and below wafers |
| Equipment dimensions | 970mm x 1450mm x 2024mm (width x depth x height) |
| Heating temperature range | Room temperature~~800 ℃ (thermocouple) 800 ℃~1250 ℃ (infrared pyrometer) |
| heating rate | 150 ℃/s bare wafer 20 ℃/s silicon carbide carrier |
| Temperature uniformity | ＜ 500 ℃, uniformity ≤ ± 5 ℃ ≥ 500 ℃, uniformity ≤ ± 1% |
| Temperature control repeatability | ±1℃ |
| Constant temperature duration | Programmable according to requirements |
| Brand Name | Ganova |
| Model Number | RTP-SA-8 |
| Place of Origin | China |
MOQ: 1
Price:
| Payment Terms | T/T |
| Delivery Time | 8-10week days |
| Product Name | Rapid Thermal Annealing System |
| Model | RTP-150RL |
| Maximum sample size | 150mm |
| Process gases | three sets |
| Software control system | RL900 |
| temperature control | Tube power PID |
| Brand Name | GaNova |
| Model Number | JDEQ-0002 |
| Place of Origin | Suzhou China |
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Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Product Name | AlN single crystal |
| Roughness | Al face:≤0.5nm N face(back):≤1.2μm |
| appearance | Circular belt positioning edge |
| TUA | ≥90% |
| Main positioning edge orientation | {10-10}±5.0° |
| TTV(μm) | ≤30 |
| Brand Name | GaNova |
| Model Number | JDCD02-001-003 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
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Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Appearance | Circular belt positioning edge |
| Product Name | Aluminum Nitride Wafer |
| Diameter(mm) | 25.4±0.5 |
| Thickness(μm) | 400±50 |
| Crystal Form | 2H |
| Polytype | {0001}±0.5° |
| Brand Name | GaNova |
| Model Number | JDCD02-001-002 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
MOQ:
Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| TUA | ≥90% |
| Polytype | {0001}±0.5° |
| Product Name | Aluminum Nitride Wafer |
| Diameter | 25.4±0.5mm |
| Thickness | 400±50μm |
| Crystal Form | 2H |
| Brand Name | GaNova |
| Model Number | JDCD02-001-001 |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
MOQ:
Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Dimensions | φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm |
| Substrate | Sapphire(Single or Double Side Polished) |
| Conduction Type | Semi-Insulating |
| Edge Exclusion Zone | <2mm |
| Surface Roughness | Ra<1.5nm(10*10μm) |
| Product Name | Aluminum Nitride Wafer |
| XRD FWHM of(002) | ≤80arcsec, ≤100arcsec, ≤120arcsec, ≤160arcsec |
| XRD FWHM of(102) | ≤650arcsec, ≤550arcsec, ≤450arcsec, ≤400arcsec |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDWY01-001-001 |
MOQ:
Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Dimensions | φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm |
| Substrate | Sapphire(Single or Double Side Polished) |
| Conduction Type | Semi-Insulating |
| Edge Exclusion Zone | <2mm |
| Surface Roughness | Ra<1.5nm(10*10μm) |
| Product Name | Aluminum Nitride Wafer |
| XRD FWHM of(002) | ≤80arcsec, ≤100arcsec, ≤120arcsec, ≤160arcsec |
| XRD FWHM of(102) | ≤650arcsec, ≤550arcsec, ≤450arcsec, ≤400arcsec |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDWY01-001-001 |
MOQ:
Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Dimensions | φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm |
| Substrate | Sapphire(Single or Double Side Polished) |
| Conduction Type | Semi-Insulating |
| Product Name | Aluminum Nitride Wafer |
| XRD FWHM of(002) | ≤80arcsec, ≤100arcsec, ≤120arcsec, ≤160arcsec |
| XRD FWHM of(102) | ≤650arcsec, ≤550arcsec, ≤450arcsec, ≤400arcsec |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
MOQ:
Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Product Name | Aluminum Nitride Wafer |
| Dimensions | φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm |
| Substrate | Sapphire(Single or Double Side Polished) |
| Conduction Type | Semi-Insulating |
| Edge Exclusion Zone | <2mm |
| Surface Roughness | Ra<1.5nm(10*10μm) |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDWY01-001-001 |
MOQ:
Price:
| Payment Terms | T/T |
| Packaging Details | Vacuum packing in a class 10000 clean room environment,in cassettes of 25pcs or single wafer containers. |
| Product Name | Aluminum Nitride Wafer |
| Dimensions | φ50.8mm±0.1mm,OF(1-100),Al Face,Locating Edge 16.0± 1.0mm |
| Substrate | Sapphire(Single or Double Side Polished) |
| Edge Exclusion Zone | <2mm |
| Surface Roughness | Ra<1.5nm(10*10μm) |
| XRD FWHM of(002) | ≤80arcsec, ≤100arcsec, ≤120arcsec, ≤160arcsec |
| Brand Name | GaNova |
| Certification | UKAS/ISO9001:2015 |
| Place of Origin | Suzhou China |
| Model Number | JDWY01-001-001 |
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