SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 2-4 WEEKS |
| Furnace Chamber Size | Customizable per wafer size |
| Temperature Range | 100–1600 °C (customizable) |
| Temperature Accuracy | ±1 °C |
| Pressure Range | 0–5 MPa |
| Ramp-Up/Down Rate | 1–10 °C/min |
| Vacuum Level | ≤10⁻² Pa |
| Brand Name | ZMSH |
| Place of Origin | SHANGHAI,CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 2-4 WEEKS |
| Furnace Chamber Size | Customizable per wafer size | Temperature Range | 100–1600 °C (customizable) |
| Temperature Accuracy | ±1 °C | Pressure Range | 0–5 MPa |
| Ramp-Up/Down Rate | 1–10 °C/min | Vacuum Level | ≤10⁻² Pa |
| Brand Name | ZMSH | Place of Origin | SHANGHAI,CHINA |
| High Light | SiC sintering furnace high-temperature ，semiconductor sintering furnace carbonization ，uniform bonding furnace SiC | ||
The SiC Sintering Furnace is designed for high-temperature sintering and carbonization of wafers, SiC seeds, graphite paper, and graphite plates. When paired with the SiC Fully Automatic Spray Bonding Machine, it ensures bubble-free, uniformly pressed, high-precision SiC bonded products.
The furnace allows adjustable temperature, pressure, and sintering time, guaranteeing complete adhesive carbonization and stable chemical bonding. It is ideal for high-temperature, high-strength, and corrosive environments, providing a stable, high-yield (>90%) production process for SiC seed bonding, semiconductor wafer preparation, and high-precision material bonding.
High-Temperature Sintering and Carbonization
Bonded wafers, SiC seeds, graphite paper, and graphite plates undergo controlled high-temperature treatment.
Adhesive layers are fully carbonized and cured, forming a stable chemical bond.
Uniform Pressing
Adjustable pressure ensures even bonding across the interface, preventing local warping or voids.
Vacuum-assisted and bubble detection features achieve bubble-free sintering.
Programmable Process Parameters
Temperature, pressure, ramp-up/ramp-down profiles, and dwell time are fully programmable.
Adapts to different material characteristics and process requirements, ensuring consistent bonding strength and reliability.
High-Precision Temperature Control: Uniform furnace temperature for consistent bonding results.
Adjustable Pressure System: Ensures uniform interface compression.
Vacuum Assistance: Removes air bubbles for defect-free bonding.
Programmable Process Control: Automatic ramp-up, dwell, and cool-down cycles, with multiple stored recipes.
Modular Design: Easy maintenance and future expandability.
Safety Features: Over-temperature and over-pressure protection, operation interlocks.
| Parameter | Specification | Notes |
|---|---|---|
| Furnace Chamber Size | Customizable per wafer size | Supports single or multiple wafers |
| Temperature Range | 100–1600 °C (customizable) | Suitable for different SiC bonding materials |
| Temperature Accuracy | ±1 °C | Ensures uniform sintering |
| Pressure Range | 0–5 MPa | Adjustable for uniform pressing |
| Ramp-Up/Down Rate | 1–10 °C/min | Adjustable per process |
| Vacuum Level | ≤10⁻² Pa | Removes internal air bubbles, improves bonding yield |
| Power Supply | 220V / 380V | Per customer requirement |
| Cycle Time | 30–180 min | Adjustable based on material thickness and process |
SiC Seed Bonding: High-temperature sintering and carbonization for strong and uniform bonding.
Semiconductor Wafer Preparation: Sintering single or multi-crystal SiC wafers.
High-Temperature, Corrosion-Resistant Materials: High-performance ceramics and graphite-based composites.
R&D and Pilot Production: Small-batch, high-precision material sintering.
High Yield: When combined with the automated spray bonding machine, bonding yield exceeds 90%.
High Stability: Adjustable temperature, pressure, and vacuum ensure consistent sintering results.
High Reliability: Key components meet international standards for long-term stable operation.
Expandable: Modular design allows multi-wafers or larger wafer sizes.
User-Friendly Operation: Programmable interface automates the entire sintering cycle.
Q1: What materials can the SiC Sintering Furnace process?
A1: Wafers, SiC seeds, graphite paper, graphite plates, and other high-temperature, corrosion-resistant materials.
Q2: Are temperature and pressure adjustable?
A2: Yes. Temperature ranges from 100–1600 °C and pressure from 0–5 MPa. Both are fully adjustable per material and process requirements.
Q3: How is bubble-free sintering ensured?
A3: The furnace integrates vacuum-assisted evacuation and uniform pressing, guaranteeing bubble-free and complete bonding.
Q4: Can multiple wafers be processed at once?
A4: Yes. The chamber can be customized for single or multiple wafers.
Q5: What is the typical sintering cycle time?
A5: Adjustable, generally 30–180 minutes, depending on material thickness and process settings.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widel...
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