Double Sided Bordered Single Layer Capacitor 100pF 50V Low ESR Capacitor

Product Specification

HACC101S10V500 Double-Sided Bordered SLC (100pF,50V)

What is a Double-Sided Bordered Single Layer Capacitor?
For high-reliability microelectronic packaging, securing both the top and bottom of a chip capacitor is critical. The HACC101S10V500 is designed as a Double-Sided Bordered (Margin) Single Layer Capacitor.

Unlike single-bordered variants, this chip features an un-metallized, exposed ceramic border (Margin) on both the top and bottom surfaces.

•Top Margin: Prevents gold wire-bonding short circuits from accidental alignment drifts.
•Bottom Margin: Prevents conductive silver epoxies (e.g., H20E) from migrating up the vertical sidewalls of the chip during bottom die attachment.

This dual-barrier architecture guarantees that even under automated, high-volume production, the rate of epoxy-induced short-circuiting is reduced to absolute zero.

The Science Behind TaN/TiW/Ni/Au Thin-Film Metallization

The HACC101S10V500 stands out due to its multi-layer TaN/TiW/Ni/Au (Tantalum Nitride / Titanium-Tungsten / Nickel / Gold) metallization on both electrodes (thickness ≥ 2.5 µm Min). Here is why this complex film system is critical for microwave modules:

1.TaN (Tantalum Nitride) Layer: Serves as an ultra-robust adhesion layer, locking the metallization to the ceramic dielectric body and preventing electrode peeling under high-temperature baking.
2.TiW (Titanium-Tungsten) Barrier: Blocks the diffusion of copper or underlying substrate materials into the gold layer.
3.Ni (Nickel) Barrier Layer: Acts as an industry-standard anti-leaching barrier. It prevents gold-leaching (dissolution of gold into solder or epoxies) during high-temperature reflow or silver-epoxy curing.
4.Au (Gold) Top Coat: Offers a highly solderable, non-oxidizing surface optimized for thermosonic gold wire bonding (Au wire-bonding), ensuring outstanding pull-strength.

Dimensions

Technical Specifications (HACC101S10V500)

Micro-Assembly & Wire Bonding Best Practices
To ensure the mechanical longevity of the HACC101S10V500 in your hybrid microcircuits:

1.Conductive Epoxy Mounting:
•Highly optimized for conductive silver epoxy (e.g., H20E).
•Recommended Baking Profile: Cure at 120℃ for 30 minutes for optimal shear strength and electrical conductivity.
2.Wire Bonding Landing Area:
•To prevent localized micro-fractures in the single-layer ceramic structure, the gold-wire bonding wedge/ball must land at least 25 µm away from the gold pad’s outer edge.
3.Sidewall Inspection:
•Thanks to the double-sided margin, the bottom epoxy fillet is safely contained. Visually inspect under a microscope to ensure no epoxy reaches the top gold pad.

FAQ

Q1: Why is HACC101S10V500 rated at 50V while some others are 100V?
   A: The 50V rating allows the use of an optimized dielectric thickness, enabling a higher capacitance value of 100pF in an extremely compact physical package. This is ideal for lower-voltage high-capacity decoupling paths in RF bias tees.

Q2: Can I solder directly to the TaN/TiW/Ni/Au electrodes?
   A: Yes. The nickel (Ni) barrier layer prevents the gold from leaching into lead-free or leaded solders during high-temperature reflow, preserving the integrity of the solder joint.

Q3: What are the storage requirements to prevent bonding failure?
   A: Store the capacitors in standard waffle packs or gel-paks inside a nitrogen cabinet or dry box at 20–25℃ and 40%–60% RH. Under these conditions, the shelf life is guaranteed for 1 year with pristine bondability.