HongAn Microwave Co., Ltd.
| Equivalent Series Resistance (ESR) | <0.1 Ω @ 1 GHz |
| Gate Length | 1 µm |
| Dielectric Material Type | Class I (COG/NPO) / Class II (X7R) |
| Substrate Type | P-type Silicon |
| Temperature Range | -40 to 125 °C |
| Payment Terms | L/C,D/P,D/A,T/T, |
| Wire Bond Pull Strength | ＞3.0 grams (meets MIL-STD-883) |
| Dielectric Withstanding Voltage (DWV) | 250% of Rated Voltage (100V → 250V) |
| Place of Origin | china |
| Brand Name | Hoan |
| Model Number | HACC100S10V101 |
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Product Specification
| Equivalent Series Resistance (ESR) | <0.1 Ω @ 1 GHz | Gate Length | 1 µm |
| Dielectric Material Type | Class I (COG/NPO) / Class II (X7R) | Substrate Type | P-type Silicon |
| Temperature Range | -40 to 125 °C | Payment Terms | L/C,D/P,D/A,T/T, |
| Wire Bond Pull Strength | ＞3.0 grams (meets MIL-STD-883) | Dielectric Withstanding Voltage (DWV) | 250% of Rated Voltage (100V → 250V) |
| Place of Origin | china | Brand Name | Hoan |
| Model Number | HACC100S10V101 | ||
| High Light | Bordered Single Layer Capacitor ，10pF Low ESR Capacitor ，100V Low ESR Capacitor | ||
HACC100S10V101 Bordered Single Layer Ceramic Chip Capacitor (10pF,100V)
What is a Single-Sided Bordered (Margin) Single Layer Capacitor?
In high-density microwave hybrid integrated circuits (ICs), engineers face a common assembly challenge: during die attachment, conductive silver epoxy (such as H20E) can bleed out, creep up the sides of the chip capacitor, and bridge with the top electrode, causing a catastrophic short circuit.
The HACC100S10V101 resolves this with its Single-Sided Bordered (Margin) Design. As shown in the product image, the top surface consists of a central high-purity gold electrode (TiW-Au) surrounded by a precise, un-metallized dark ceramic border (Margin). This exposed ceramic frame acts as a physical barrier, effectively blocking any epoxy bleed-out from contacting the active top electrode, guaranteeing zero-defect bonding during automated assembly.
Material & Thin-Film Metallization Structure
The HACC100S10V101 features a premium, multi-layer thin-film metallization system to ensure long-term reliability under severe thermal and mechanical stresses:
•Top Electrode: TiW-Au (Titanium-Tungsten / Gold) with an overall gold thickness of ≥ 2.5 µm Min. This thick, high-purity gold layer is optimized for high-reliability thermosonic gold wire bonding (Au wire-bonding).
•Bottom Electrode: TiW-Pt-Au (Titanium-Tungsten / Platinum / Gold) with an overall thickness of ≥ 2.5 µm Min. The inclusion of a Platinum (Pt) barrier layer prevents silver-to-gold intermetallic migration when using silver conductive epoxies, ensuring maximum adhesion.
Dimensions
Technical Specifications (HACC100S10V101)
| Technical Parameter | Specification Value | Test/Environmental Conditions |
| Part Number | HACC100S10V101 | |
| Capacitor Style | Single Layer Ceramic Chip(SLC) | Single-sided bordered (Margin) type |
| Capacitance | 10 pF±10% | Measured @ 1kHz, 1Vrms, 25°C, No DCBias |
| Rated Voltage | 100VDC | High-voltage reliability margin |
| Operating Temp. Range | -55°Cto +125°C | Fully complies with Tactical-gradestandards |
| Top Metallization System | TiW-Au (Au > 2.5 um Min) | Solderable & Wire-bondable |
| Bottom MetallizationSystem | TiW-Pt-Au (Au > 2.5 um Min) | Excellent conductive epoxy compatibility |
| Frequency Capability | Optimized for GHz Band | Ultra-low ESR and ESL at microwave bands |
Assembly & Gold Wire Bonding Best Practices
To achieve an optimal assembly yield when integrating the HACC100S10V101 into your RF modules:
1.Conductive Epoxy Die-Attach:
•Mounting with conductive silver epoxy (e.g., H20E) is highly recommended.
•Recommended Baking/Curing Profile: Bake at 120℃ for 30 minutes to ensure robust mechanical and electrical attachment.
2.Gold Wire Bonding Wedge Margin:
•To prevent micro-cracking of the ceramic or delamination of the gold film during thermosonic wire-bonding, the bonding ball/wedge must be placed at least 25 µm away from the outer edge of the gold pad.
3.Die Placement Force:
•Keep the pick-and-place nozzle force controlled to prevent localized stress on the single-layer ceramic body.
Typical High-Frequency Microwave Applications
•5G & 6G Millimeter-Wave (mmWave) Small Cells
•Optoelectronic Transceivers (100G/400G SFP/QSFP Modules)
•GaAs, GaN & InP High-Power RF Amplifiers (Bypass & Decoupling)
•LNA (Low Noise Amplifier) DC Blocking Circuits
•Satellite Communications (Satcom) and Tactical Avionics
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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