| Pd - Power Dissipation | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 300ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 3.4mJ |
| Description | 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK40B120N1 |
| Package | TO-247 |
| Model Number | AOK40B120N1 |
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Product Specification
| Pd - Power Dissipation | - | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | Operating Temperature | -55℃~+175℃@(Tj) |
| Reverse Recovery Time(trr) | 300ns | Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 3.4mJ | Description | 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK40B120N1 | Package | TO-247 |
| Model Number | AOK40B120N1 |
The AOK40B120N1 is a high-performance IGBT module featuring the latest Alpha IGBT (IGBT) technology. It offers a 1200V collector-emitter voltage and a continuous collector current of 40A (TC=100C). Key advantages include very low VCE(sat) and VF, high short-circuit ruggedness, very low turn-on EMI, and easy paralleling capability. Its design also boasts low gate charge (Qg) and a very soft and fast recovery anti-parallel diode, contributing to high efficiency and ruggedness in hard switching converters. The maximum junction temperature is rated at 175C. This product is suitable for applications such as motor drives and industrial UPS.
| Parameter | Symbol | Value | Units | Notes |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | 1200 | V | |
| Continuous Collector Current | IC | 40 | A | TC=100C |
| Continuous Collector Current | IC | 80 | A | TC=25C |
| Pulsed Collector Current | ICM | 160 | A | Limited by TJmax |
| Gate-Emitter Voltage | VGE | 30 | V | |
| Continuous Diode Forward Current | IF | 40 | A | TC=100C |
| Diode Pulsed Current, Limited by TJmax | IFM | 160 | A | |
| Short Circuit Withstanding Time | tSC | 10 | s | VGE=15V, VCC600V, TJ175C |
| Power Dissipation | PD | 300 | W | TC=25C |
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 175 | C | |
| Maximum Diode Junction-to-Case Thermal Resistance | RJC (1) | 0.25 | C/W | |
| Maximum IGBT Junction-to-Case Thermal Resistance | RJC | 0.4 | C/W | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | 30 | C/W | |
| VCE(sat) (TJ=25C) | 1.97 | V | ||
| Maximum Lead Temperature for Soldering Purpose, 1/8" from case for 5 seconds | TL | 300 | C | |
| Collector-Emitter Voltage | VCE | 1200 | V | |
| Continuous Collector Current | IC | 40 | A | TC=100C |
| Turn-Off SOA, VCE 1200V, Limited by TJmax | 160 | A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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