Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 106ns |
| Pd - Power Dissipation | 28W |
| Td(on) | 8.5ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA |
| Gate Charge(Qg) | 14nC |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Reverse Recovery Time(trr) | 195ns |
| Switching Energy(Eoff) | 70uJ |
| Turn-On Energy (Eon) | 80uJ |
| Pulsed Current- Forward(Ifm) | 15A |
| Output Capacitance(Coes) | 36pF |
| Description | IGBT 650V 10A Surface Mount TO-252 |
| Mfr. Part # | AOD5B65M1 |
| Package | TO-252 |
| Model Number | AOD5B65M1 |
View Detail Information
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Product Specification
| Td(off) | 106ns | Pd - Power Dissipation | 28W |
| Td(on) | 8.5ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA | Gate Charge(Qg) | 14nC |
| Operating Temperature | -55℃~+150℃@(Tj) | Reverse Recovery Time(trr) | 195ns |
| Switching Energy(Eoff) | 70uJ | Turn-On Energy (Eon) | 80uJ |
| Pulsed Current- Forward(Ifm) | 15A | Output Capacitance(Coes) | 36pF |
| Description | IGBT 650V 10A Surface Mount TO-252 | Mfr. Part # | AOD5B65M1 |
| Package | TO-252 | Model Number | AOD5B65M1 |
The AOD5B65M1 is a 650V, 5A Alpha IGBT featuring a fast and soft recovery anti-parallel diode. This component utilizes the latest AlphaIGBT ( IGBT) technology and offers a 650V breakdown voltage. It is designed for high efficiency with low VCE(SAT) and low turn-off switching loss, while also providing excellent EMI behavior and high short-circuit ruggedness. Ideal for motor drives, home appliances (refrigerators, washing machines), fans, pumps, vacuum cleaners, and other hard switching applications.
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BVCES | TJ=25C | 650 | - | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | TJ=25C, IC=5A, VGE=15V | - | 1.57 | 1.98 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | TJ=125C, IC=5A, VGE=15V | - | 1.87 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | TJ=150C, IC=5A, VGE=15V | - | 1.95 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | TJ=25C, IC=10A, VGE=15V | - | 1.8 | 2.25 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | TJ=125C, IC=10A, VGE=15V | - | 1.79 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | TJ=150C, IC=10A, VGE=15V | - | 1.75 | - | V |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=1mA, VCE=5V | - | 5.1 | - | V |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V, TJ=25C | - | - | 10 | A |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V, TJ=125C | - | - | 100 | A |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V, TJ=150C | - | - | 500 | A |
| Gate-Emitter Leakage Current | IGES | VGE=30V | - | - | 100 | nA |
| Diode Forward Voltage | VF | IF=5A, TJ=25C | - | 1.8 | 2.25 | V |
| Diode Forward Voltage | VF | IF=5A, TJ=125C | - | 1.79 | - | V |
| Diode Forward Voltage | VF | IF=5A, TJ=150C | - | 1.75 | - | V |
| Continuous Collector Current | IC | TC=25C | - | - | 15 | A |
| Continuous Collector Current | IC | TC=100C | - | - | 10 | A |
| Continuous Diode Forward Current | IF | TC=25C | - | - | 10 | A |
| Continuous Diode Forward Current | IF | TC=100C | - | - | 5 | A |
| Pulsed Collector Current | ICM | Limited by TJmax | - | - | 15 | A |
| Pulsed Collector Current | ILM | Limited by TJmax | - | - | 15 | A |
| Diode Pulsed Current | IFM | Limited by TJmax | - | - | 15 | A |
| Collector-Emitter Voltage | VCE | - | - | - | 650 | V |
| Gate-Emitter Voltage | VGE | - | -30 | - | +30 | V |
| Power Dissipation | PD | TC=25C | - | - | 69 | W |
| Short circuit withstanding time | tSC | VGE=15V, VCC400V, TJ150C | - | - | 5 | s |
| Junction and Storage Temperature Range | TJ, TSTG | - | -55 | - | 150 | C |
| Maximum IGBT Junction-to-Case Thermal Resistance | RJC | - | - | 1.8 | - | C/W |
| Maximum Diode Junction-to-Case Thermal Resistance | RJC | - | - | 5.5 | - | C/W |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | - | - | 55 | - | C/W |
| Lead temperature for soldering purpose, 1/8" from case for 5 seconds | TL | - | - | - | 300 | C |
| Minimum Order Quantity | - | - | 2500 | - | - | pcs |
| Orderable Part Number | - | - | AOD5B65M1 | - | - | - |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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