| Td(off) | 134ns |
| Pd - Power Dissipation | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 58nC |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Turn-On Energy (Eon) | - |
| Description | 1.35kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK20B135E1 |
| Package | TO-247 |
| Model Number | AOK20B135E1 |
View Detail Information
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Product Specification
| Td(off) | 134ns | Pd - Power Dissipation | - |
| Td(on) | - | Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| IGBT Type | - | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 58nC | Operating Temperature | -55℃~+175℃@(Tj) |
| Turn-On Energy (Eon) | - | Description | 1.35kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK20B135E1 | Package | TO-247 |
| Model Number | AOK20B135E1 |
The AOK20B135E1 is a 1350V, 20A Alpha IGBT with an integrated diode, featuring the latest AlphaIGBT ( IGBT) technology. It offers best-in-class VCE(SAT) for high efficiencies, low turn-off switching loss due to fast turn-off times, and very smooth turn-off current waveforms that reduce EMI. This IGBT also provides better thermal management and high surge current capability with minimal gate spike due to high input capacitance. It is designed and qualified for consumer market applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications.
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | V CE | 1350 | V | |||
| Gate-Emitter Voltage | V GE | 30 | V | |||
| Continuous Collector Current | I C | TC=100C | 20 | A | ||
| Continuous Diode Forward Current | I F | TC=25C | 40 | A | ||
| Continuous Diode Forward Current | I F | TC=100C | 20 | A | ||
| Pulsed Collector Current, Limited by TJmax | I CSM | 80 | A | |||
| Diode Pulsed Current, Limited by TJmax | I Fpulse | 200 | A | |||
| Capacitor charging saturation current limited by Tjmax & tp<3s | I LM | Note A | 250 | A | ||
| Turn off SOA, VCE 600V, Limited by TJmax | 80 | A | ||||
| Junction and Storage Temperature Range | T J , T STG | -55 | 175 | C | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | T L | 300 | C | |||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | R JC | TC=25C | 0.6 | C/W | ||
| Maximum IGBT Junction-to-Case | R JC | TC=100C | 0.8 | C/W | ||
| Maximum Junction-to-Ambient | R JA | 40 | C/W | |||
| Electrical Characteristics (TJ=25C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BV CES | VGE=0V, IC=1mA | 1350 | V | ||
| Collector-Emitter Saturation Voltage | V CE(sat) | VGE=15V, IC=20A, TJ=25C | 1.8 | 2.3 | V | |
| Collector-Emitter Saturation Voltage | V CE(sat) | VGE=15V, IC=20A, TJ=125C | 2.2 | V | ||
| Collector-Emitter Saturation Voltage | V CE(sat) | VGE=15V, IC=20A, TJ=175C | 2.5 | V | ||
| Gate-Emitter Threshold Voltage | V GE(th) | IC=1mA, VCE=5V | 4.5 | 5.15 | 5.8 | V |
| Zero Gate Voltage Collector Current | I CES | VCE=1350V, VGE=0V, TJ=25C | 10 | A | ||
| Zero Gate Voltage Collector Current | I CES | VCE=1350V, VGE=0V, TJ=125C | 500 | A | ||
| Zero Gate Voltage Collector Current | I CES | VCE=1350V, VGE=0V, TJ=175C | 5000 | A | ||
| Gate-Emitter leakage current | I GES | VGE=30V | 100 | nA | ||
| Diode Forward Voltage | V F | IF=20A, TJ=25C | 1.6 | 2 | V | |
| Diode Forward Voltage | V F | IF=20A, TJ=125C | 1.68 | V | ||
| Diode Forward Voltage | V F | IF=20A, TJ=175C | 1.7 | V | ||
| Dynamic Parameters | ||||||
| Input Capacitance | C ies | VGE=0V, VCE=25V, f=1MHz | 1455 | pF | ||
| Output Capacitance | C oes | VGE=0V, VCE=25V, f=1MHz | 86 | pF | ||
| Reverse Transfer Capacitance | C res | VGE=0V, VCE=25V, f=1MHz | 27 | pF | ||
| Total Gate Charge | Q g | VCE=20V, IC=20A | 58 | nC | ||
| Gate to Emitter Charge | Q ge | VCE=20V, IC=20A | 13 | nC | ||
| Gate to Collector Charge | Q gc | VCE=20V, IC=20A | 28 | nC | ||
| Forward Transconductance | g FS | VDS=20V, ID=20A | 21 | S | ||
| Gate resistance | R g | VCE=0V, VGE=0V, f=1MHz | 2.1 | |||
| Switching Parameters (Load Inductive, TJ=25C) | ||||||
| Turn-Off Delay Time | t D(off) | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 134 | ns | ||
| Turn-Off Fall Time | t f | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 112 | ns | ||
| Turn-Off Energy | E off | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 0.8 | mJ | ||
| Switching Parameters (Load Inductive, TJ=175C) | ||||||
| Turn-Off Delay Time | t D(off) | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 157 | ns | ||
| Turn-Off Fall Time | t f | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 154 | ns | ||
| Turn-Off Energy | E off | VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH | 1.26 | mJ | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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