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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China 1350V 20A Alpha IGBT AOS AOK20B135E1 with integrated diode offering low
China 1350V 20A Alpha IGBT AOS AOK20B135E1 with integrated diode offering low

  1. China 1350V 20A Alpha IGBT AOS AOK20B135E1 with integrated diode offering low

1350V 20A Alpha IGBT AOS AOK20B135E1 with integrated diode offering low

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Td(off) 134ns
Pd - Power Dissipation -
Td(on) -
Collector-Emitter Breakdown Voltage (Vces) 1.35kV
IGBT Type -
Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
Gate Charge(Qg) 58nC
Operating Temperature -55℃~+175℃@(Tj)
Turn-On Energy (Eon) -
Description 1.35kV TO-247 Single IGBTs RoHS
Mfr. Part # AOK20B135E1
Package TO-247
Model Number AOK20B135E1

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  1. Product Details
  2. Company Details

Product Specification

Td(off) 134ns Pd - Power Dissipation -
Td(on) - Collector-Emitter Breakdown Voltage (Vces) 1.35kV
IGBT Type - Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
Gate Charge(Qg) 58nC Operating Temperature -55℃~+175℃@(Tj)
Turn-On Energy (Eon) - Description 1.35kV TO-247 Single IGBTs RoHS
Mfr. Part # AOK20B135E1 Package TO-247
Model Number AOK20B135E1

Product Overview

The AOK20B135E1 is a 1350V, 20A Alpha IGBT with an integrated diode, featuring the latest AlphaIGBT ( IGBT) technology. It offers best-in-class VCE(SAT) for high efficiencies, low turn-off switching loss due to fast turn-off times, and very smooth turn-off current waveforms that reduce EMI. This IGBT also provides better thermal management and high surge current capability with minimal gate spike due to high input capacitance. It is designed and qualified for consumer market applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications.

Product Attributes

  • Brand: AOS (Alpha & Omega Semiconductor)
  • Technology: Alpha IGBT ( IGBT)
  • Package Type: TO247
  • Qualification: Consumer Market

Technical Specifications

Parameter Symbol Condition Min Typ Max Units
Absolute Maximum Ratings
Collector-Emitter Voltage V CE 1350 V
Gate-Emitter Voltage V GE 30 V
Continuous Collector Current I C TC=100C 20 A
Continuous Diode Forward Current I F TC=25C 40 A
Continuous Diode Forward Current I F TC=100C 20 A
Pulsed Collector Current, Limited by TJmax I CSM 80 A
Diode Pulsed Current, Limited by TJmax I Fpulse 200 A
Capacitor charging saturation current limited by Tjmax & tp<3s I LM Note A 250 A
Turn off SOA, VCE 600V, Limited by TJmax 80 A
Junction and Storage Temperature Range T J , T STG -55 175 C
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 C
Thermal Characteristics
Maximum IGBT Junction-to-Case R JC TC=25C 0.6 C/W
Maximum IGBT Junction-to-Case R JC TC=100C 0.8 C/W
Maximum Junction-to-Ambient R JA 40 C/W
Electrical Characteristics (TJ=25C unless otherwise noted)
Collector-Emitter Breakdown Voltage BV CES VGE=0V, IC=1mA 1350 V
Collector-Emitter Saturation Voltage V CE(sat) VGE=15V, IC=20A, TJ=25C 1.8 2.3 V
Collector-Emitter Saturation Voltage V CE(sat) VGE=15V, IC=20A, TJ=125C 2.2 V
Collector-Emitter Saturation Voltage V CE(sat) VGE=15V, IC=20A, TJ=175C 2.5 V
Gate-Emitter Threshold Voltage V GE(th) IC=1mA, VCE=5V 4.5 5.15 5.8 V
Zero Gate Voltage Collector Current I CES VCE=1350V, VGE=0V, TJ=25C 10 A
Zero Gate Voltage Collector Current I CES VCE=1350V, VGE=0V, TJ=125C 500 A
Zero Gate Voltage Collector Current I CES VCE=1350V, VGE=0V, TJ=175C 5000 A
Gate-Emitter leakage current I GES VGE=30V 100 nA
Diode Forward Voltage V F IF=20A, TJ=25C 1.6 2 V
Diode Forward Voltage V F IF=20A, TJ=125C 1.68 V
Diode Forward Voltage V F IF=20A, TJ=175C 1.7 V
Dynamic Parameters
Input Capacitance C ies VGE=0V, VCE=25V, f=1MHz 1455 pF
Output Capacitance C oes VGE=0V, VCE=25V, f=1MHz 86 pF
Reverse Transfer Capacitance C res VGE=0V, VCE=25V, f=1MHz 27 pF
Total Gate Charge Q g VCE=20V, IC=20A 58 nC
Gate to Emitter Charge Q ge VCE=20V, IC=20A 13 nC
Gate to Collector Charge Q gc VCE=20V, IC=20A 28 nC
Forward Transconductance g FS VDS=20V, ID=20A 21 S
Gate resistance R g VCE=0V, VGE=0V, f=1MHz 2.1
Switching Parameters (Load Inductive, TJ=25C)
Turn-Off Delay Time t D(off) VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH 134 ns
Turn-Off Fall Time t f VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH 112 ns
Turn-Off Energy E off VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH 0.8 mJ
Switching Parameters (Load Inductive, TJ=175C)
Turn-Off Delay Time t D(off) VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH 157 ns
Turn-Off Fall Time t f VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH 154 ns
Turn-Off Energy E off VGE=15V, VCE=600V, IC=20A, RG=15, Parasitic Inductance=150nH 1.26 mJ

2411192322_AOS-AOK20B135E1_C17691629.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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