| Td(off) | 82ns |
| Pd - Power Dissipation | - |
| Td(on) | 12ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 367pF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@1mA |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Gate Charge(Qg) | 9.4nC@5A,15V |
| Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 40uJ |
| Turn-On Energy (Eon) | 140uJ |
| Description | 600V TO-252-2(DPAK) Single IGBTs RoHS |
| Mfr. Part # | AOD5B60D |
| Package | TO-252-2(DPAK) |
| Model Number | AOD5B60D |
View Detail Information
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Product Specification
| Td(off) | 82ns | Pd - Power Dissipation | - |
| Td(on) | 12ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 367pF@25V | IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@1mA | Operating Temperature | -55℃~+150℃@(Tj) |
| Gate Charge(Qg) | 9.4nC@5A,15V | Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 40uJ | Turn-On Energy (Eon) | 140uJ |
| Description | 600V TO-252-2(DPAK) Single IGBTs RoHS | Mfr. Part # | AOD5B60D |
| Package | TO-252-2(DPAK) | Model Number | AOD5B60D |
The AOD5B60D is a 600V, 5A Alpha IGBT with an integrated soft diode, designed for high-performance applications. This product line offers best-in-class conduction and switching losses, robust short circuit capability, and is optimized for ease of paralleling. Key advantages include minimal gate spike under high dV/dt conditions and resistance to oscillations. The co-packaged soft diode is specifically engineered to minimize losses in motor control applications.
| Parameter | Condition | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (VCE) | 600 | V | |
| Continuous Collector Current (IC) | TC=100C | 5 | A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | TC=25C | 1.55 | V |
| Gate-Emitter Voltage (VGE) | 20 | V | |
| Continuous Diode Forward Current (IF) | TC=100C | 5 | A |
| Collector-Emitter Breakdown Voltage (BVCES) | TJ=25C | 600 | V |
| Gate-Emitter Threshold Voltage (VGE(th)) | IC=1mA, VGE=0V | 1.55 - 1.8 | V |
| Zero Gate Voltage Collector Current (ICES) | VCE=600V, VGE=0V | - | A |
| Diode Forward Voltage (VF) | IF=5A, TJ=25C | 1.46 - 1.75 | V |
| Maximum Junction-to-Case Thermal Resistance (RJC) - IGBT | 2.3 | C/W | |
| Maximum Junction-to-Case Thermal Resistance (RJC) - Diode | 3 | C/W | |
| Maximum Junction-to-Ambient Thermal Resistance (RJA) | 55 | C/W | |
| Junction and Storage Temperature Range (TJ, TSTG) | -55 to 150 | C | |
| Power Dissipation (PD) | TC=25C | 54.4 | W |
| Short circuit withstanding time (tSC) | VGE=15V, VCE400V, TC=25C | 10 | s |
Note: This product has been designed and qualified for the consumer market. Applications or uses as critical components in life support devices or systems are not authorized.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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