Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 115ns |
| Pd - Power Dissipation | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 67nC |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Switching Energy(Eoff) | 1.28mJ |
| Turn-On Energy (Eon) | - |
| Description | 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK30B120D2 |
| Package | TO-247 |
| Model Number | AOK30B120D2 |
View Detail Information
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Product Specification
| Td(off) | 115ns | Pd - Power Dissipation | - |
| Td(on) | - | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 67nC | Operating Temperature | -55℃~+175℃@(Tj) |
| Switching Energy(Eoff) | 1.28mJ | Turn-On Energy (Eon) | - |
| Description | 1.2kV TO-247 Single IGBTs RoHS | Mfr. Part # | AOK30B120D2 |
| Package | TO-247 | Model Number | AOK30B120D2 |
The AOK30B120D2 is an Alpha IGBT with an integrated diode, designed for high-performance applications. It leverages the latest AlphaIGBT ( IGBT) technology, offering low turn-off switching loss due to fast turn-off times and very smooth turn-off current waveforms that reduce EMI. This device provides better thermal management and high surge current capability, with minimal gate spike due to high input capacitance. It is suitable for applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications. This product has been designed and qualified for the consumer market.
| Parameter | Conditions | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Collector-Emitter Voltage | V CE | 1200 | V | |||
| Continuous Collector Current | TC=100C | I C | 30 | A | ||
| Collector-Emitter Saturation Voltage | TC=25C | V CE(sat) | 1.77 | 2.2 | V | |
| Diode Pulsed Current, Limited by TJmax | I Fpulse | 300 | A | |||
| Pulsed Collector Current, Limited by TJmax | I CSM | 200 | A | |||
| Diode Forward Current | TC=25C | I F | 60 | A | ||
| Continuous Collector Current | TC=25C | I C | 60 | A | ||
| Power Dissipation | TC=25C | P D | 340 | W | ||
| Junction and Storage Temperature Range | T J , T STG | -55 | 175 | C | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | T L | 300 | C | |||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | TC=100C | R q JC | 0.44 | C/W | ||
| Maximum Diode Junction-to-Case | R q JC | 1.20 | C/W | |||
| Maximum Junction-to-Ambient | R q JA | 40 | C/W | |||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | TJ=25C | BV CES | 1200 | - | - | V |
| Gate-Emitter Threshold Voltage | TJ=25C | V GE(th) | - | 1.5 | 1.8 | V |
| Zero Gate Voltage Collector Current | VCE=1200V, VGE=0V | I CES | - | - | 10 | nA |
| VGE=0V, IC=30A | I CES | - | - | 100 | A | |
| Diode Forward Voltage | VCE=5V, IC=1mA | V F | - | - | 2.2 | V |
| TJ=25C | V F | - | 1.77 | - | V | |
| TJ=125C | V F | - | 1.6 | - | V | |
| TJ=175C | V F | - | 1.62 | - | V | |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=30A | V CE(sat) | - | 1.77 | 2.2 | V |
| TJ=25C | V CE(sat) | - | 1.77 | - | V | |
| TJ=125C | V CE(sat) | - | 2.2 | - | V | |
| TJ=175C | V CE(sat) | - | 2.43 | - | V | |
| Forward Transconductance | VCE=20V, IC=30A | g FS | - | 28 | - | S |
| Input Capacitance | VGE=0V, VCE=25V, f=1MHz | C ies | - | 1900 | - | pF |
| Output Capacitance | VGE=0V, VCE=25V, f=1MHz | C oes | - | 109 | - | pF |
| Reverse Transfer Capacitance | VGE=0V, VCE=25V, f=1MHz | C res | - | 32 | - | pF |
| Total Gate Charge | VGE=15V, IC=30A | Q g | - | 67 | - | nC |
| Gate to Emitter Charge | VGE=15V, IC=30A | Q ge | - | 16 | - | nC |
| Gate to Collector Charge | VGE=15V, IC=30A | Q gc | - | 32 | - | nC |
| Switching Parameters (Load Inductive, TJ=25C) | ||||||
| Turn-Off Delay Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t D(off) | - | 115 | - | ns |
| Turn-Off Fall Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t f | - | 130 | - | ns |
| Turn-Off Energy | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | E off | - | 1.28 | - | mJ |
| Switching Parameters (Load Inductive, TJ=175C) | ||||||
| Turn-Off Delay Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t D(off) | - | 140 | - | ns |
| Turn-Off Fall Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t f | - | 200 | - | ns |
| Turn-Off Energy | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | E off | - | 2.15 | - | mJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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