Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 134ns |
| Pd - Power Dissipation | - |
| Td(on) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 60.5nC |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Turn-On Energy (Eon) | - |
| Description | 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK20B120E1 |
| Package | TO-247 |
| Model Number | AOK20B120E1 |
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Product Specification
| Td(off) | 134ns | Pd - Power Dissipation | - |
| Td(on) | - | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 60.5nC | Operating Temperature | -55℃~+175℃@(Tj) |
| Turn-On Energy (Eon) | - | Description | 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | AOK20B120E1 | Package | TO-247 |
| Model Number | AOK20B120E1 |
The AOK20B120E1 is a 1200V, 20A Alpha IGBT with an integrated diode, featuring the latest AlphaIGBT ( IGBT) technology. It offers best-in-class VCE(SAT) for high efficiencies, low turn-off switching loss due to fast turn-off time, and very smooth turn-off current waveforms that reduce EMI. This IGBT provides better thermal management, high surge current capability, and minimal gate spike due to high input capacitance. It is designed for applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications. This product has been designed and qualified for the consumer market.
| Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | 1200 | V | |||
| Continuous Collector Current | TC=25C | 80 | A | ||
| Continuous Collector Current | TC=100C | 40 | A | ||
| Continuous Diode Forward Current | TC=25C | 40 | A | ||
| Continuous Diode Forward Current | TC=100C | 20 | A | ||
| Pulsed Collector Current | Limited by TJmax | 200 | A | ||
| Diode Pulsed Current | Limited by TJmax | 80 | A | ||
| Gate-Emitter Voltage | -30 | +30 | V | ||
| Collector-Emitter Breakdown Voltage | TJ=25C | 1200 | V | ||
| Collector-Emitter Saturation Voltage | VGE=15V, IC=20A, TJ=25C | 1.68 | 2.1 | V | |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=20A, TJ=125C | 2 | V | ||
| Collector-Emitter Saturation Voltage | VGE=15V, IC=20A, TJ=175C | 2.2 | V | ||
| Gate-Emitter Threshold Voltage | VCE=20V, IC=1mA, TJ=25C | 4.5 | 5.15 | 5.8 | V |
| Zero Gate Voltage Collector Current | VCE=1200V, VGE=0V, TJ=25C | 10 | A | ||
| Zero Gate Voltage Collector Current | VCE=1200V, VGE=0V, TJ=125C | 500 | A | ||
| Zero Gate Voltage Collector Current | VCE=1200V, VGE=0V, TJ=175C | 5000 | A | ||
| Diode Forward Voltage | IF=20A, TJ=25C | 1.6 | 2 | V | |
| Diode Forward Voltage | IF=20A, TJ=125C | 1.68 | V | ||
| Diode Forward Voltage | IF=20A, TJ=175C | 1.7 | V | ||
| Maximum Power Dissipation | TC=25C | 333 | W | ||
| Maximum IGBT Junction-to-Case Thermal Resistance | 0.45 | C/W | |||
| Maximum Diode Junction-to-Case Thermal Resistance | 1.6 | C/W | |||
| Maximum Junction-to-Ambient Thermal Resistance | 40 | C/W | |||
| Junction and Storage Temperature Range | -55 | 175 | C | ||
| Orderable Part Number | AOK20B120E1 | ||||
| Minimum Order Quantity | 240 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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