Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 324ns |
| Pd - Power Dissipation | 20mW |
| Td(on) | 171ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.076nF |
| Input Capacitance(Cies) | 21.7nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,100A |
| Gate Charge(Qg) | 1.8uC@600V,15V |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Pulsed Current- Forward(Ifm) | 200A |
| Switching Energy(Eoff) | 6.42mJ |
| Turn-On Energy (Eon) | 10.4mJ |
| Description | IGBT FS (Field Stop) 1.2kV 100A 20mW Through Hole,107.5x45mm |
| Mfr. Part # | FP100R12N2T7BPSA2 |
| Package | Through Hole,107.5x45mm |
| Model Number | FP100R12N2T7BPSA2 |
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Product Specification
| Td(off) | 324ns | Pd - Power Dissipation | 20mW |
| Td(on) | 171ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.076nF | Input Capacitance(Cies) | 21.7nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,100A |
| Gate Charge(Qg) | 1.8uC@600V,15V | Operating Temperature | -40℃~+175℃@(Tj) |
| Pulsed Current- Forward(Ifm) | 200A | Switching Energy(Eoff) | 6.42mJ |
| Turn-On Energy (Eon) | 10.4mJ | Description | IGBT FS (Field Stop) 1.2kV 100A 20mW Through Hole,107.5x45mm |
| Mfr. Part # | FP100R12N2T7BPSA2 | Package | Through Hole,107.5x45mm |
| Model Number | FP100R12N2T7BPSA2 |
The FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology. It offers electrical features such as a VCES of 1200 V, IC nom of 100 A / ICRM of 200 A, low VCEsat, and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, an integrated NTC temperature sensor, and solder contact technology. This module is qualified for industrial applications according to IEC standards.
| Component | Parameter | Symbol | Note or test condition | Values | Unit |
| General Module | Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Material of module baseplate | - | - | Cu | - | |
| Internal Isolation | - | - | basic insulation (class 1, IEC 61140) | - | |
| Substrate Material | - | - | Al2O3 | - | |
| Creepage distance | dCreep | terminal to heatsink | 10.0 | mm | |
| Clearance | dClear | terminal to heatsink | 7.5 | mm | |
| Comparative tracking index | CTI | - | > 200 | - | |
| Stray inductance module | LsCE | - | 35 | nH | |
| Module lead resistance, terminals - chip | RAA'+CC' | TC=25C, per switch | 2.5 | m | |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 4.3 | m | |
| Storage temperature | Tstg | - | -40 to 125 | C | |
| Weight | G | - | 180 | g | |
| IGBT, Inverter | Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continous DC collector current | ICDC | Tvj max = 175 C, TC = 95 C | 100 | A | |
| Repetitive peak collector current | ICRM | tP = 1 ms | 200 | A | |
| Gate-emitter peak voltage | VGES | - | 20 | V | |
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V | 1.50 (Tvj=25C), 1.64 (Tvj=125C), 1.72 (Tvj=175C) | V | |
| Gate threshold voltage | VGEth | IC = 2.5 mA, VCE = VGE, Tvj = 25 C | 5.15 to 6.45 | V | |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 1.8 | C | |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 21.7 | nF | |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.076 | nF | |
| Turn-on delay time | tdon | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.171 to 0.190 | s | |
| Rise time | tr | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.050 to 0.058 | s | |
| Turn-off delay time | tdoff | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.324 to 0.494 | s | |
| Fall time | tf | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.093 to 0.245 | s | |
| Turn-on energy loss per pulse | Eon | IC = 100 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 4.3 | 10.4 to 17.6 | mJ | |
| Diode, Inverter | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continous DC forward current | IF | - | 100 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 200 | A | |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 930 to 1000 | As | |
| Forward voltage | VF | IF = 100 A | 1.52 to 1.72 | V | |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 100 A, VGE = -15 V | 58.2 to 82.4 | A | |
| Recovered charge | Qr | VR = 600 V, IF = 100 A, VGE = -15 V | 9.83 to 20.1 | C | |
| Reverse recovery energy | Erec | VR = 600 V, IF = 100 A, VGE = -15 V | 3.31 to 6.45 | mJ | |
| Diode, Rectifier | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1600 | V |
| Maximum RMS forward current per chip | IFRMSM | TC = 110 C | 100 | A | |
| Maximum RMS current at rectifier output | IRMSM | TC = 110 C | 100 | A | |
| Surge forward current | IFSM | tP = 10 ms | 515 to 745 | A | |
| I2t - value | I2t | tP = 10 ms | 1330 to 2780 | As | |
| Forward voltage | VF | IF = 100 A, Tvj = 150 C | 1.16 | V | |
| NTC-Thermistor | Temperature under switching conditions | Tvj op | - | -40 to 175 | C |
| Temperature under switching conditions | Tvj op | - | -40 to 175 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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