Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | ITF48IF1200HR-HXY |
| Package | TO-247 |
| Model Number | ITF48IF1200HR-HXY |
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns | Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ | Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | ITF48IF1200HR-HXY |
| Package | TO-247 | Model Number | ITF48IF1200HR-HXY |
The ITF48IF1200HR is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as Power Factor Correction (PFC), motor drives, and On-Board Chargers (OBC).
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ.) |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF (@IF=40A, TJ=25) | 1.85 | V | Diode Forward Voltage |
| ICES (@VCE=1200V, VGE=0V) | 10 | A | Collector-Emitter Leakage Current |
| Cies | 3980 | pF | Input Capacitance |
| Qg | 346 | nC | Gate charge |
| td(on) (@TJ=25) | 25 | ns | Turn-on Delay Time |
| tr (@TJ=25) | 28 | ns | Rise Time |
| td(off) (@TJ=25) | 262 | ns | Turn-Off Delay Time |
| tf (@TJ=25) | 149 | ns | Fall Time |
| Eon (@TJ=25) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (@TJ=25) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (@TJ=25) | 3.60 | mJ | Total Switching Loss |
| Trr (@TJ=25) | 94 | ns | Reverse Recovery Time |
| Qrr (@TJ=25) | 225 | nC | Reverse Recovery Charge |
| Irrm (@TJ=25) | 9.7 | A | Reverse Recovery Current |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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