| Pd - Power Dissipation | 1.95kW |
| Td(off) | 530ns |
| Td(on) | 100ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 1.4nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@12.0mA |
| Gate Charge(Qg) | 3.2uC |
| Operating Temperature | -40℃~+125℃ |
| Pulsed Current- Forward(Ifm) | 600A |
| Switching Energy(Eoff) | 15mJ |
| Turn-On Energy (Eon) | 25mJ |
| Description | 1.95kW 1.2kV IGBT Module Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | FF300R12KS4 |
| Package | Screw Terminals |
| Model Number | FF300R12KS4 |
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Product Specification
| Pd - Power Dissipation | 1.95kW | Td(off) | 530ns |
| Td(on) | 100ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 1.4nF | IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@12.0mA | Gate Charge(Qg) | 3.2uC |
| Operating Temperature | -40℃~+125℃ | Pulsed Current- Forward(Ifm) | 600A |
| Switching Energy(Eoff) | 15mJ | Turn-On Energy (Eon) | 25mJ |
| Description | 1.95kW 1.2kV IGBT Module Screw Terminals Single IGBTs RoHS | Mfr. Part # | FF300R12KS4 |
| Package | Screw Terminals | Model Number | FF300R12KS4 |
The 62mm C-Series module features a fast IGBT2 for high-frequency switching applications. It is designed for inverter use and offers robust performance with excellent thermal characteristics.
| Parameter | IGBT, Inverter | Diode, Inverter | Module |
| Collector-emitter voltage (VCES) | 1200 V | ||
| Continuous DC collector current (IC) | 300 A (TC=60C) / 370 A (TC=25C) | ||
| Repetitive peak collector current (ICRM) | 600 A | ||
| Total power dissipation (Ptot) | 1950 W (TC=25C) | ||
| Gate-emitter peak voltage (VGES) | +/-20 V | ||
| Collector-emitter saturation voltage (VCE sat) | 3.20 - 3.85 V (IC=300A, VGE=15V) | ||
| Gate threshold voltage (VGEth) | 4.5 - 6.5 V (IC=12.0mA) | ||
| Gate charge (QG) | 3.20 C (VGE=-15V...+15V) | ||
| Internal gate resistor (RGint) | 1.0 | ||
| Input capacitance (Cies) | 20.0 nF (f=1MHz) | ||
| Reverse transfer capacitance (Cres) | 1.40 nF (f=1MHz) | ||
| Collector-emitter cut-off current (ICES) | 5.0 mA (VCE=1200V) | ||
| Gate-emitter leakage current (IGES) | 400 nA (VCE=0V, VGE=20V) | ||
| Turn-on delay time (td on) | 0.10 - 0.11 s | ||
| Rise time (tr) | 0.06 - 0.07 s | ||
| Turn-off delay time (td off) | 0.53 - 0.55 s | ||
| Fall time (tf) | 0.03 - 0.04 s | ||
| Turn-on energy loss per pulse (Eon) | 25.0 mJ | ||
| Turn-off energy loss per pulse (Eoff) | 15.0 mJ | ||
| Short circuit data (ISC) | 2000 A | ||
| Thermal resistance, junction to case (RthJC) | 0.064 K/W (per IGBT) | 0.10 K/W (per diode) | |
| Thermal resistance, case to heatsink (RthCH) | 0.03 K/W (per IGBT) | 0.06 K/W (per diode) | 0.01 K/W (per module) |
| Temperature under switching conditions (Tvj op) | -40 - 125 C | -40 - 125 C | |
| Repetitive peak reverse voltage (VRRM) | 1200 V | ||
| Continuous DC forward current (IF) | 300 A | ||
| Repetitive peak forward current (IFRM) | 600 A | ||
| I2t - value | 18000 As | ||
| Forward voltage (VF) | 1.70 - 2.55 V | ||
| Peak reverse recovery current (IRM) | 230 - 300 A | ||
| Recovered charge (Qr) | 18.0 - 42.0 C | ||
| Reverse recovery energy (Erec) | 7.0 - 15.0 mJ | ||
| Isolation test voltage (VISOL) | 2.5 kV (RMS) | ||
| Creepage distance (terminal to heatsink) | 29.0 mm | ||
| Creepage distance (terminal to terminal) | 23.0 mm | ||
| Clearance (terminal to heatsink) | 23.0 mm | ||
| Clearance (terminal to terminal) | 11.0 mm | ||
| Comperative tracking index (CTI) | > 400 | ||
| Stray inductance module (LsCE) | 20 nH | ||
| Module lead resistance, terminals - chip (RCC'+EE') | 0.70 m | ||
| Storage temperature (Tstg) | -40 - 125 C | ||
| Mounting torque for module mounting (M6) | 3.00 - 6.00 Nm | ||
| Terminal connection torque (M6) | 2.5 - 5.0 Nm | ||
| Weight (G) | 340 g |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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