Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 250W |
| Td(off) | 124ns |
| Td(on) | 24ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 183nC@15V |
| Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 1.4mJ |
| Input Capacitance(Cies) | 3.356nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 179pF |
| Description | 250W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | FGH60N60SFDTU-HXY |
| Package | TO-247 |
| Model Number | FGH60N60SFDTU-HXY |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 250W | Td(off) | 124ns |
| Td(on) | 24ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 183nC@15V | Reverse Recovery Time(trr) | 136ns |
| Switching Energy(Eoff) | 1.2mJ | Turn-On Energy (Eon) | 1.4mJ |
| Input Capacitance(Cies) | 3.356nF | Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 179pF | Description | 250W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | FGH60N60SFDTU-HXY | Package | TO-247 |
| Model Number | FGH60N60SFDTU-HXY |
The FGH60N60SFDTU is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and ruggedness, including UPS, motor drives, boost converters, and portable power stations.
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Absolute Ratings | |||
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @TC=25C | 100 | A | Collector Current |
| IC @TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF @TC=25C | 100 | A | Diode Continuous Forward Current |
| IF @TC=100C | 60 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 8 | s | Short circuit withstand time VGE=15V, VCC400V, allowed number of short circuits<1000,times between short circuits1.0s,TJ175C |
| PD @TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| Thermal Characteristics | |||
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Electrical Characteristics (at TC = 25C, unless otherwise specified) | |||
| VCE(sat) typ | 1.65 | V | Collector-Emitter Saturation Voltage (VGE=15V, IC=60A) |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage (VCE=VGE, IC=1mA) |
| VF | 1.65 - 2.05 | V | Diode Forward Voltage (IF=50A) |
| ICES | -- | A | Collector-Emitter Leakage Current (VCE=650V, VGE=0V) (Max: 10) |
| IGES(F) | -- | nA | Gate-Emitter Forward Leakage Current (VGE=+20V) (Max: 200) |
| IGES(R) | -- | nA | Gate-Emitter Reverse Leakage Current (VGE=-20V) (Max: -200) |
| Dynamic Characteristics | |||
| Cies | -- | pF | Input Capacitance (VGE=0V, VCE=25V, f=1.0MHz) (Typ: 3356) |
| Coes | -- | pF | Output Capacitance (Typ: 179) |
| Cres | -- | pF | Reverse Transfer Capacitance (Typ: 93) |
| Qg | -- | nC | Gate charge (VCC=520V, ICE=60A, VGE=15V) (Typ: 183) |
| Qge | -- | nC | Gate-emitter charge (Typ: 26) |
| Qgc | -- | nC | Gate-collector charge (Typ: 83) |
| IGBT Switching Characteristics (at TJ=25) | |||
| td(on) | -- | ns | Turn-on Delay Time (IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load) (Typ: 24) |
| tr | -- | ns | Rise Time (Typ: 88) |
| td(off) | -- | ns | Turn-Off Delay Time (Typ: 124) |
| tf | -- | ns | Fall Time (Typ: 73) |
| Eon | -- | mJ | Turn-On Switching Loss (Typ: 1.40) |
| Eoff | -- | mJ | Turn-Off Switching Loss (Typ: 1.20) |
| Ets | -- | mJ | Total Switching Loss (Typ: 2.60) |
| IGBT Switching Characteristics (at TJ=175) | |||
| td(on) | -- | ns | Turn-on Delay Time (IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load) (Typ: 30) |
| tr | -- | ns | Rise Time (Typ: 95) |
| td(off) | -- | ns | Turn-Off Delay Time (Typ: 152) |
| tf | -- | ns | Fall Time (Typ: 67) |
| Eon | -- | mJ | Turn-On Switching Loss (Typ: 1.62) |
| Eoff | -- | mJ | Turn-Off Switching Loss (Typ: 1.50) |
| Ets | -- | mJ | Total Switching Loss (Typ: 3.12) |
| Diode Characteristics (at TJ=25) | |||
| Trr | -- | ns | Reverse Recovery Time (IF=60A, VCC=400V, di/dt=200A/s) (Typ: 136) |
| Qrr | -- | nC | Reverse Recovery Charge (Typ: 350) |
| Irrm | -- | A | Reverse Recovery Current (Typ: 6.9) |
| Diode Characteristics (at TJ=175) | |||
| Trr | -- | ns | Reverse Recovery Time (IF=60A, VCC=400V, di/dt=200A/s) (Typ: 183) |
| Qrr | -- | nC | Reverse Recovery Charge (Typ: 560) |
| Irrm | -- | A | Reverse Recovery Current (Typ: 7.8) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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