Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 1us |
| Pd - Power Dissipation | 56.8W |
| Td(on) | 750ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | IGBT Module |
| Operating Temperature | -30℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 60A |
| Reverse Recovery Time(trr) | 200ns |
| Description | 56.8W 600V IGBT Module DIP-24 Single IGBTs RoHS |
| Mfr. Part # | 6MBP30XSF060-50 |
| Package | DIP-24 |
| Model Number | 6MBP30XSF060-50 |
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Product Specification
| Td(off) | 1us | Pd - Power Dissipation | 56.8W |
| Td(on) | 750ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | IGBT Module | Operating Temperature | -30℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 60A | Reverse Recovery Time(trr) | 200ns |
| Description | 56.8W 600V IGBT Module DIP-24 Single IGBTs RoHS | Mfr. Part # | 6MBP30XSF060-50 |
| Package | DIP-24 | Model Number | 6MBP30XSF060-50 |
The 6MBP30XSF060-50 is an IGBT Module from the X series, designed for 600V and 30A applications. It features separate emitter type low-side IGBTs, short circuit protection, temperature sensor output, overheating protection, under-voltage protection, and a fault signal output function. The input interface supports TTL (3.3V/5V) with active high logic. This module is ideal for AC 100 ~ 240V three-phase inverter drives in small power AC motor applications, including compressor motor drives for air conditioners and heat pumps, as well as fan and ventilator motor drives.
| Item | Symbol | Characteristics | Unit | Remarks |
| Absolute Maximum Ratings (at Tj=25C, VCC=15V unless otherwise specified) | ||||
| DC Bus Voltage | VDC | 450 | V | Note *1 |
| Bus Voltage (Surge) | VDC(Surge) | 500 | V | Note *1 |
| Collector-Emitter Voltage | VCES | 600 | V | |
| Collector Current | IC@25 | 30 | A | Note *2 |
| Peak Collector Current | ICP@25 | 60 | A | VCC15V, VB(*)15V Note *2, *3, *4 |
| Collector Current | 40 | A | VCC13V, VB(*)13V Note *2, *3, *4 | |
| Diode Forward current | IF@25 | 30 | A | Note *2 |
| Peak Diode Forward current | IFP@25 | 60 | A | Note *2 |
| Collector Power Dissipation | PD_IGBT | 56.8 | W | per single IGBT TC=25C |
| FWD Power Dissipation | PD_FWD | 36.2 | W | per single FWD TC=25C |
| Junction Temperature | Tj | 150 | C | |
| Operating Junction Temperature | TjOP | -40 ~ +150 | C | |
| High-side Supply Voltage | VCCH | -0.5 ~ 20 | V | Applied between VCCH-COM |
| Low-side Supply Voltage | VCCL | -0.5 ~ 20 | V | Applied between VCCL-COM |
| High-side Bias Absolute Voltage | VVB(U)-COM, VVB(V)-COM, VVB(W)-COM | -0.5 ~ 620 | V | Applied between VB(U)-COM, VB(V)-COM, VB(W)-COM |
| High-side Bias Voltage for IGBT gate driving | VB(U), VB(V), VB(W) | -0.5 ~ 20 | V | Note *4 |
| High-side Bias offset Voltage | VU, VV, VW | -5 ~ 600 | V | Applied between U-COM, V-COM, W-COM Note *5 |
| Input Signal Voltage | VIN | -0.5 ~ VCCH+0.5, -0.5 ~ VCCL+0.5 | V | Note *6 |
| Input Signal Current | IIN | 3 | mA sink current | |
| Fault Signal Voltage | VFO | -0.5 ~ VCCL+0.5 | V | Applied between VFO-COM |
| Fault Signal Current | IFO | 1 | mA sink current | |
| Over Current sensing Input Voltage | VIS | -0.5 ~ VCCL+0.5 | V | Applied between IS-COM |
| Operating Junction Temperature | Tj | 150 | C | |
| Operating Case Temperature | TC | -40 ~ +125 | C | See Fig.1-1 |
| Storage Temperature | Tstg | -40 ~ +125 | C | |
| Isolation Voltage | Viso | 1500 | Vrms | Sine wave, 60Hz t=1min, Note *7 |
| Electrical Characteristics (Inverter block, Tj=25C unless otherwise specified) | ||||
| Zero gate Voltage Collector current | ICES | 1 | mA | VCE=600V VIN=0V Tj=25C |
| Zero gate Voltage Collector current | ICES | 10 | mA | VCE=600V VIN=0V Tj=125C |
| Collector-Emitter saturation Voltage | VCE(sat) | 0.90 ~ 1.10 | V | VCC=+15V VB(*)=+15V VIN=5V Note *4 IC=3A Tj=25C |
| Collector-Emitter saturation Voltage | VCE(sat) | 1.60 ~ 1.90 | V | IC=30A Tj=125C |
| Collector-Emitter saturation Voltage | VCE(sat) | 1.75 ~ 2.10 | V | IC=30A Tj=125C |
| FWD Forward voltage drop | VF | 1.70 ~ 2.05 | V | IF=30A VIN=0V Tj=25C |
| FWD Forward voltage drop | VF | 1.55 | V | IF=30A Tj=125C |
| Turn-on time | ton | 0.51 ~ 1.25 | s | VDC=300V IC=30A VCC=15V VB(*)=15V Tj=125C VIN=0V <-> 5V Note *4 |
| Turn-on delay | td(on) | 0.75 | s | |
| Turn-on rise time | tr | 0.10 | s | |
| VCE-IC Cross time of turn-on | tc(on) | 0.30 ~ 0.50 | s | |
| Turn-off time | toff | 1.15 ~ 1.65 | s | |
| Turn-off delay | td(off) | 1.00 | s | |
| Turn-off fall time | tf | 0.15 | s | |
| VCE-IC Cross time of turn-on | tc(off) | 0.10 ~ 0.20 | s | |
| FWD Reverse Recovery time | trr | 0.20 | s | |
| Electrical Characteristics (Control circuit block, Tj=25C unless otherwise specified) | ||||
| Circuit current of Low-side | ICCL | 0.6 ~ 0.9 | mA | VCCL=15V VIN=5V |
| Circuit current of Low-side | ICCL | 0.6 ~ 0.9 | mA | VCCL=15V VIN=0V |
| Circuit current of High-side | ICCH | 1.25 ~ 1.9 | mA | VCCH=15V VIN=5V |
| Circuit current of High-side | ICCH | 1.25 ~ 1.9 | mA | VCCH=15V VIN=0V |
| Circuit current of Bootstrap circuit (per one uint) | ICCHB | 0.20 | mA | VB(U)=15V, VB(V)=15V, VB(W)=15V VIN=5V |
| Circuit current of Bootstrap circuit (per one uint) | ICCHB | 0.20 | mA | VIN=0V |
| Input Signal threshold voltage | Vth(on) | 2.1 ~ 2.6 | V | Note *8 Pw0.9s |
| Input Signal threshold voltage | Vth(off) | 0.8 ~ 1.3 | V | |
| Input Signal threshold hysteresis voltage | Vth(hys) | 0.35 ~ 0.80 | V | |
| Operational input pulse width of turn-on | tIN(ON) | 0.5 | s | VIN=0V to 5V rise up Note *6, Note *8 |
| Operational input pulse width of turn-off | tIN(OFF) | 0.7 | s | VIN=5V to 0V fall down Note *6, Note *8 |
| Input current | IIN | 0.7 ~ 1.5 | mA | VIN=5V, Note *6 |
| Input pull-down resistance | RIN | 3.3 ~ 7.2 | k | Note *6 |
| Fault Output Voltage | VFO(H) | 4.9 | V | VIS=0V, VFO terminal pull up to 5V by 10k |
| Fault Output Voltage | VFO(L) | 0.95 | V | VIS=1V, IFO=1mA |
| Fault Output pulse width | tFO | 20 | s | Note *9, See Fig.2-2, 2-3 |
| Over Current Protection Voltage Level | VIS(ref) | 0.455 ~ 0.505 | V | VCC=15V Note *3, *10 See Fig.2-2 |
| Over Current Protection Delay time | td(IS) | 0.3 ~ 1.3 | s | |
| Output Voltage of temperature sensor | V(temp) | 2.63 ~ 2.91 | V | Note *11 TC=90C |
| Output Voltage of temperature sensor | V(temp) | 0.88 ~ 1.39 | V | TC=25C |
| LVIC Overheating protection | TOH | 136 ~ 150 | C | See Fig.2-6 |
| TOH Hysteresis | TOH(hys) | 4 ~ 20 | C | |
| Vcc Under Voltage Trip Level of Low-side | VCCL(OFF) | 10.3 ~ 12.5 | V | Tj<150C See Fig.2-3 |
| Vcc Under Voltage Reset Level of Low-side | VCCL(ON) | 10.8 ~ 13.0 | V | |
| Vcc Under Voltage hysteresis | VCCL(hys) | 0.5 | V | |
| Vcc Under Voltage Trip Level of High-side | VCCH(OFF) | 8.3 ~ 10.3 | V | Tj<150C See Fig.2-4 |
| Vcc Under Voltage Reset Level of High-side | VCCH(ON) | 8.8 ~ 10.8 | V | |
| Vcc Under Voltage hysteresis | VCCH(hys) | 0.5 | V | |
| VB Under Voltage Trip Level | VB(OFF) | 10.0 ~ 12.0 | V | Tj<150C See Fig.2-5 |
| VB Under Voltage Reset Level | VB(ON) | 10.5 ~ 12.5 | V | |
| VB Under Voltage hysteresis | VB(hys) | 0.5 | V | |
| Forward voltage of Bootstrap diode | VF(BSD) | 0.90 ~ 1.90 | V | Tj=25C IF(BSD)=10mA |
| Forward voltage of Bootstrap diode | VF(BSD) | 2.3 ~ 6.3 | V | Tj=25C IF(BSD)=100mA |
| Thermal Characteristics | ||||
| Junction to Case Thermal Resistance (per single IGBT) | Rth(j-c)_IGBT | 2.20 | C/W | Note *12 |
| Junction to Case Thermal Resistance (per single FWD) | Rth(j-c)_FWD | 3.45 | C/W | Note *12 |
| Mechanical Characteristics | ||||
| Tighten torque | 0.59 ~ 0.98 | Nm | Mounting screw: M3 | |
| Heat-sink side flatness | 0 ~ 100 | m | Note. *13 | |
| Weight | 9.3 | g | ||
| Recommended Operation Conditions | ||||
| DC Bus Voltage | VDC | 0 ~ 400 | V | |
| High-side Bias Voltage for IGBT gate driving | VB(*) | 13.0 ~ 18.5 | V | |
| High-side Supply Voltage | VCCH | 13.5 ~ 16.5 | V | |
| Low-side Supply Voltage | VCCL | 13.5 ~ 16.5 | V | |
| Control Supply variation | VB | -1 ~ 1 | V/s | |
| Control Supply variation | VCC | -1 ~ 1 | V/s | |
| Input signal voltage | VIN | 0 ~ 5 | V | |
| Voltage for current sensing | VISC | 0 ~ 5 | V | |
| Potential difference of between Vcc to N (including surge) | VCOM_N | -5 ~ 5 | V | |
| Dead time for preventing arm-short | tDEAD | 1.0 | s | (Tc125C) |
| Allowable output current | IO | 30.0 | A rms | (Note *14) |
| Allowable minimum input pulse width | PWIN(on) | 0.5 | s | (Note *15, Note *16) |
| Allowable minimum input pulse width | PWIN(off) | 0.7 | s | (Note *15, Note *16) |
| PWM Input frequency | fPWM | 20 | kHz | |
| Operating Junction Temperature | Tj(ope) | -30 ~ 150 | C | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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