Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-247 Single IGBTs RoHS |
| Mfr. Part # | FGW75XS65D |
| Package | TO-247 |
| Model Number | FGW75XS65D |
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Product Specification
| Description | TO-247 Single IGBTs RoHS | Mfr. Part # | FGW75XS65D |
| Package | TO-247 | Model Number | FGW75XS65D |
The FGW75XS65D is a Discrete IGBT from Fuji Electric's XS-series, designed for high-performance applications requiring low power loss, reduced switching surge and noise, and high reliability. It is suitable for use in uninterruptible power supplies, PV power conditioners, and inverter welding machines.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | 650 | V | ||||
| Gate-Emitter Voltage | VGES | ± 20 | V | ||||
| Transient Gate-Emitter Voltage | tp < 1 µs | ± 30 | V | ||||
| DC Collector Current | IC@25 | TC = 25 °C | 115 | A | |||
| DC Collector Current | IC@100 | TC = 100 °C | 75 | A | |||
| Pulsed Collector Current | ICP | 300 | A | Note *1 | |||
| Turn-Off Safe Operating Area | VCE ≤ 650 V, Tvj ≤ 175 °C | - 300 | A | ||||
| Diode Forward Current | IF@25 | 48 | A | ||||
| Diode Forward Current | IF@100 | 30 | A | ||||
| Diode Pulsed Current | IFP | 300 | A | Note *1 | |||
| IGBT Max. Power Dissipation | Ptot_IGBT | TC = 25 °C | 437 | W | |||
| FWD Max. Power Dissipation | Ptot_FWD | TC = 25 °C | 131 | W | |||
| Operating Junction Temperature | Tvj | -40 | +175 | °C | |||
| Storage Temperature | Tstg | -55 | +175 | °C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | - | - | 250 | µA | |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | - | - | 2 | mA | |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGE = ± 20 V | - | - | 200 | nA | |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = 20 V, IC = 75 mA | 3.4 | 4.0 | 4.6 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 25 °C | - | 1.35 | 1.70 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 125 °C | - | 1.50 | - | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 175 °C | - | 1.60 | - | V | |
| Input Capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1 MHz | - | 5940 | - | pF | |
| Output Capacitance | Coes | - | 134 | - | pF | ||
| Reverse Transfer Capacitance | Cres | - | 60 | - | pF | ||
| Gate Charge | QG | VCC = 520 V, IC = 75 A, VGE = 15 V | - | 300 | - | nC | |
| Turn-On Delay Time | td(on) | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 44 | - | ns | Energy loss include “tail” and FWD reverse recovery. |
| Rise Time | tr | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 52 | - | ns | |
| Turn-Off Delay Time | td(off) | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 340 | - | ns | |
| Fall Time | tf | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 28 | - | ns | |
| Turn-On Energy | Eon | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 1.00 | - | mJ | |
| Turn-Off Energy | Eoff | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 0.94 | - | mJ | |
| Turn-On Delay Time | td(on) | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 44 | - | ns | Energy loss include “tail” and FWD reverse recovery. |
| Rise Time | tr | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 50 | - | ns | |
| Turn-Off Delay Time | td(off) | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 380 | - | ns | |
| Fall Time | tf | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 46 | - | ns | |
| Turn-On Energy | Eon | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 1.30 | - | mJ | |
| Turn-Off Energy | Eoff | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 1.00 | - | mJ | |
| Forward Voltage Drop | VF | IF = 30 A, Tvj = 25 °C | - | 1.70 | 2.15 | V | |
| Forward Voltage Drop | VF | IF = 30 A, Tvj = 125 °C | - | 1.78 | - | V | |
| Forward Voltage Drop | VF | IF = 30 A, Tvj = 175 °C | - | 1.78 | - | V | |
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 15 A, -diF/dt = 700 A/µs, Tvj = 25 °C | - | 68 | - | ns | |
| Diode Reverse Recovery Charge | Qrr | VCC = 400 V, IF = 15 A, -diF/dt = 700 A/µs, Tvj = 25 °C | - | 0.56 | - | µC | |
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 15 A, -diF/dt = 700 A/µs, Tvj = 150 °C | - | 80 | - | ns | |
| Diode Reverse Recovery Charge | Qrr | VCC = 400 V, IF = 15 A, -diF/dt = 700 A/µs, Tvj = 150 °C | - | 0.96 | - | µC | |
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | - | - | 50 | °C/W | ||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | - | - | 0.343 | °C/W | ||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | - | - | 1.148 | °C/W | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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