Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 195ns |
| Pd - Power Dissipation | 417W |
| Td(on) | 48ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 35pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 170nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 375ns |
| Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 2.65mJ |
| Input Capacitance(Cies) | 5.047nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 161pF |
| Description | 417W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | IXGH50N120C3-HXY |
| Package | TO-247 |
| Model Number | IXGH50N120C3-HXY |
View Detail Information
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Product Specification
| Td(off) | 195ns | Pd - Power Dissipation | 417W |
| Td(on) | 48ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 35pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@250uA |
| Gate Charge(Qg) | 170nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 375ns | Switching Energy(Eoff) | 1.6mJ |
| Turn-On Energy (Eon) | 2.65mJ | Input Capacitance(Cies) | 5.047nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 161pF |
| Description | 417W 1.2kV TO-247 Single IGBTs RoHS | Mfr. Part # | IXGH50N120C3-HXY |
| Package | TO-247 | Model Number | IXGH50N120C3-HXY |
The IXGH50N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This IGBT is ideal for UPS, EV-chargers, and solar string inverters.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Collector emitter voltage | VCE | 1200 | V | |||
| DC collector current | IC | TC = 25C | 80 | A | ||
| DC collector current | IC | TC = 100C | 40 | A | ||
| Pulsed collector current | ICM | TC = 25C | 160 | A | ||
| Maximum Diode forward current | IF | TC = 25C | 80 | A | ||
| Maximum Diode forward current | IF | TC = 100C | 40 | A | ||
| Diode pulsed current | IFM | TC = 25C | 160 | A | ||
| Gate-Emitter voltage | VGE | TVJ = 25C | 20 | V | ||
| Transient Gate-Emitter Voltage | TVJ = 25C (tp 10s, D < 0.010) | 30 | V | |||
| Power Dissipation | Ptot | TC = 25C | 417 | W | ||
| Power Dissipation | Ptot | TC = 100C | 208 | W | ||
| Operating Junction Temperature Range | TVJ | -40 | +175 | C | ||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Collector - Emitter Breakdown Voltage | V(BR)CES | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 25C | 1.6 | 1.9 | 2.3 | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 40A ,TVJ = 175C | - | 2.9 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 25C | - | 2.5 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 40A ,TVJ = 175C | - | 1.8 | - | V |
| Gate-Emitter threshold voltage | VGE(th) | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| Zero Gate voltage Collector current | ICES | VCE = 650V , VGE = 0V | - | - | 250.0 | mA |
| Gate-Emitter leakage current | IGES | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| Transconductance | gfs | VGE = 20V, IC = 40A | - | 28 | - | S |
| Input Capacitance | Cies | VGE = 0V, VCE = 25V, f = 1MHz | - | 5047 | - | pF |
| Output Capacitance | Coes | - | 161 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 35 | - | pF | |
| Gate Charge | Qg | VGE = 0 to 15V VCE = 960V, IC = 40A | - | 170 | - | nC |
| Gate to Emitter charge | Qge | - | 37.5 | - | nC | |
| Gate to Collector charge | Qgc | - | 68 | - | nC | |
| Turn-On DelayTime | td(on) | VGE = 15V, VCC = 600V IC=40A, RG(off) = 12 | - | 48 | - | ns |
| Turn-On Rise Time | tr | - | 50 | - | ns | |
| Turn-Off DelayTime | td(off) | - | 195 | - | ns | |
| Turn-Off Fall Time | tf | - | 100 | - | ns | |
| Turn-on energy | Eon | - | 2.65 | - | mJ | |
| Turn-off energy | Eoff | - | 1.6 | - | mJ | |
| Total switching energy | Ets | - | 4.25 | - | mJ | |
| Reverse recovery time | Trr | VR = 600 V, IF = 40 A, di/dt = 600 A/S | - | 375 | - | ns |
| Reverse recovery charge | Qrr | - | 2.29 | - | mC | |
| Peak reverse recovery current | Irrm | - | 15 | - | A | |
| Thermal resistance: junction - ambient | RJA | 40 | C/W | |||
| Thermal resistance: junction - case IGBT | RJC | IGBT | 0.36 | C/W | ||
| Thermal resistance: junction - case Diode | RJC | Diode | 0.45 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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