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Hefei Purple Horn E-Commerce Co., Ltd.

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China Three Phase Inverter Drive IGBT Module with Temperature Sensor Output Fuji
China Three Phase Inverter Drive IGBT Module with Temperature Sensor Output Fuji

  1. China Three Phase Inverter Drive IGBT Module with Temperature Sensor Output Fuji

Three Phase Inverter Drive IGBT Module with Temperature Sensor Output Fuji

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High-side Bias Voltage(Vbs) 13.5V~16.5V
Voltage - Supply 13.5V~16.5V
Voltage - Isolation 1500Vrms
Frequency - Switching 20kHz
Description 20kHz Through Hole,43x26mm Single IGBTs RoHS
Mfr. Part # 6MBP15XSF060-50
Package Through Hole,43x26mm
Model Number 6MBP15XSF060-50

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  1. Product Details
  2. Company Details

Product Specification

High-side Bias Voltage(Vbs) 13.5V~16.5V Voltage - Supply 13.5V~16.5V
Voltage - Isolation 1500Vrms Frequency - Switching 20kHz
Description 20kHz Through Hole,43x26mm Single IGBTs RoHS Mfr. Part # 6MBP15XSF060-50
Package Through Hole,43x26mm Model Number 6MBP15XSF060-50

Product Overview

The 6MBP15XSF060-50 is an IGBT Module from the X series, designed for AC 100 ~ 240V three-phase inverter drives for small power AC motor applications. It features low-side IGBTs with separate emitters, short circuit protection, temperature sensor output, overheating protection, under-voltage protection, and a fault signal output. The input interface supports TTL (3.3V/5V) with active high logic.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ItemSymbolConditionsMin.Typ.Max.UnitRemarks
Absolute Maximum Ratings
DC Bus VoltageVDC450VNote *1
Bus Voltage (Surge)VDC(Surge)500VNote *1
Collector-Emitter VoltageVCES600V
Collector CurrentIC@2515ANote *2
Peak Collector CurrentICP@25VCC15V, VB(*)15V30ANote *2, *3, *4
Collector CurrentIC@25VCC13V, VB(*)13V20ANote *2, *3, *4
Diode Forward currentIF@2515ANote *2
Peak Diode Forward currentIFP@2530ANote *2
Collector Power DissipationPD_IGBTTC=25C32.5Wper single IGBT
FWD Power DissipationPD_FWDTC=25C25.5Wper single FWD
Junction TemperatureTj150C
Operating Junction TemperatureTjOP-40+150C
High-side Supply VoltageVCCHApplied between VCCH-COM-0.520V
Low-side Supply VoltageVCCLApplied between VCCL-COM-0.520V
High-side Bias Absolute VoltageVVB(U)-COM, VVB(V)-COM, VVB(W)-COMApplied between VB(U)-COM, VB(V)-COM, VB(W)-COM-0.5620V
High-side Bias Voltage for IGBT gate drivingVB(U), VB(V), VB(W)-0.520VNote *4
High-side Bias offset VoltageVU, VV, VWApplied between U-COM, V-COM, W-COM-5600VNote *5
Input Signal VoltageVINApplied between IN(HU)-COM, IN(HV)-COM, IN(HW)-COM, IN(LU)-COM, IN(LV)-COM, IN(LW)-COM-0.5VCCH+0.5 / VCCL+0.5VNote *6
Input Signal CurrentIINsink current3mA
Fault Signal VoltageVFOApplied between VFO-COM-0.5VCCL+0.5V
Fault Signal CurrentIFOsink current1mA
Over Current sensing Input VoltageVISApplied between IS-COM-0.5VCCL+0.5V
Junction TemperatureTj150C
Operating Case TemperatureTCSee Fig.1-1-40+125C
Storage TemperatureTstg-40+125C
Isolation VoltageVisoSine wave, 60Hz t=1min1500VrmsNote *7
Electrical Characteristics (Inverter block)
Zero gate Voltage Collector currentICESVCE=600V, VIN=0V1mATj=25C
Zero gate Voltage Collector currentICESVCE=600V, VIN=0V10mATj=125C
Collector-Emitter saturation VoltageVCE(sat)VCC=+15V, VB(*)=+15V, VIN=5V, IC=1.5A0.901.10VTj=25C, Note *4
Collector-Emitter saturation VoltageVCE(sat)VCC=+15V, VB(*)=+15V, VIN=5V, IC=15A1.601.90VTj=125C
Collector-Emitter saturation VoltageVCE(sat)VCC=+15V, VB(*)=+15V, VIN=5V, IC=15A1.752.10VTj=125C
FWD Forward voltage dropVFIF=15A, VIN=0V1.601.90VTj=25C
FWD Forward voltage dropVFIF=15A, VIN=0V1.50-VTj=125C
Turn-on timetonVDC=300V, IC=15A, VCC=15V, VB(*)=15V, VIN=0V <-> 5V0.550.901.30sTj=125C, See Fig.2-1, Note *4
Turn-on delaytd(on)0.75-s
Turn-on rise timetr0.15-s
VCE-IC Cross time of turn-ontc(on)0.350.60s
Turn-off timetoff0.901.30s
Turn-off delaytd(off)0.80-s
Turn-off fall timetf0.10-s
VCE-IC Cross time of turn-ontc(off)0.150.30s
FWD Reverse Recovery timetrr0.20-s
Electrical Characteristics (Control circuit block)
Circuit current of Low-sideICCLVCCL=15V, VIN=5V0.60.9mA
Circuit current of Low-sideICCLVCCL=15V, VIN=0V0.60.9mA
Circuit current of High-sideICCHVCCH=15V, VIN=5V1.251.9mA
Circuit current of High-sideICCHVCCH=15V, VIN=0V1.251.9mA
Circuit current of Bootstrap circuit (per one unit)ICCHBVB(U)=15V, VB(V)=15V, VB(W)=15V, VIN=5V-0.20mA
Circuit current of Bootstrap circuit (per one unit)ICCHBVB(U)=15V, VB(V)=15V, VB(W)=15V, VIN=0V-0.20mA
Input Signal threshold voltageVth(on)Pw0.9s2.12.6VNote *8
Input Signal threshold voltageVth(off)0.81.3-V
Input Signal threshold hysteresis voltageVth(hys)0.350.80-V
Operational input pulse width of turn-ontIN(ON)VIN=0V to 5V rise up0.5--sNote *6, Note *8
Operational input pulse width of turn-offtIN(OFF)VIN=5V to 0V fall down0.7--sNote *6, Note *8
Input currentIINVIN=5V0.71.01.5mANote *6
Input pull-down resistanceRIN3.35.07.2kNote *6
Fault Output VoltageVFO(H)VIS=0V, VFO terminal pull up to 5V by 10k4.9--V
Fault Output VoltageVFO(L)VIS=1V, IFO=1mA-0.95V
Fault Output pulse widthtFOSee Fig.2-2, 2-320--sNote *9
Over Current Protection Voltage LevelVIS(ref)VCC=15V0.4550.480.505VNote *3, *10, See Fig.2-2
Over Current Protection Delay timetd(IS)0.30.81.3s
Output Voltage of temperature sensorV(temp)TC=90C2.632.772.91VNote *11
Output Voltage of temperature sensorV(temp)TC=25C0.881.131.39VNote *11
LVIC Overheating protectionTOHSee Fig.2-6136143150C
LVIC Overheating protection HysteresisTOH(hys)41020C
Vcc Under Voltage Trip Level of Low-sideVCCL(OFF)Tj<150C10.3-12.5VSee Fig.2-3
Vcc Under Voltage Reset Level of Low-sideVCCL(ON)10.8-13.0V
Vcc Under Voltage hysteresisVCCL(hys)-0.5--V
Vcc Under Voltage Trip Level of High-sideVCCH(OFF)Tj<150C8.3-10.3VSee Fig.2-4
Vcc Under Voltage Reset Level of High-sideVCCH(ON)8.8-10.8V
Vcc Under Voltage hysteresisVCCH(hys)-0.5--V
VB Under Voltage Trip LevelVB(OFF)Tj<150C10.0-12.0VSee Fig.2-5
VB Under Voltage Reset LevelVB(ON)10.5-12.5V
VB Under Voltage hysteresisVB(hys)-0.5--V
Forward voltage of Bootstrap diodeVF(BSD)IF(BSD)=10mA, Tj=25C0.901.41.90V
Forward voltage of Bootstrap diodeVF(BSD)IF(BSD)=100mA, Tj=25C2.34.36.3V
Thermal Characteristics
Junction to Case Thermal Resistance (per single IGBT)Rth(j-c)_IGBT--3.85C/WNote *12
Junction to Case Thermal Resistance (per single FWD)Rth(j-c)_FWD--4.95C/WNote *12
Mechanical Characteristics
Tighten torqueMounting screw: M30.590.690.98Nm
Heat-sink side flatnessNote. *130-100m
Weight--9.3g
Recommended Operation Conditions
DC Bus VoltageVDC0300400V
High-side Bias Voltage for IGBT gate drivingVB(*)13.015.018.5V
High-side Supply VoltageVCCH13.515.016.5V
Low-side Supply VoltageVCCL13.515.016.5V
Control Supply variationVB-1-1V/s
Control Supply variationVCC-1-1V/s
Input signal voltageVIN0-5V
Voltage for current sensingVISC0-5V
Potential difference of between COM to N (including surge)VCOM_N-5-5V
Dead time for preventing arm-shorttDEADTc125C1.0--s
Allowable output currentIO--15.0Arms, Note *14
Allowable minimum input pulse widthPWIN(on)0.5--sNote *15, Note *16
Allowable minimum input pulse widthPWIN(off)0.7--sNote *15, Note *16
PWM Input frequencyfPWM--20kHz
Operating Junction TemperatureTj (ope)-30-150C

2410010300_Fuji-Electric-6MBP15XSF060-50_C5819990.pdf

Company Details

Bronze Gleitlager

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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