Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 1.15us |
| Pd - Power Dissipation | 79.1W |
| Td(on) | 800ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | IGBT Module |
| Operating Temperature | -30℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 70A |
| Reverse Recovery Time(trr) | 200ns |
| Description | 79.1W 600V IGBT Module Single IGBTs RoHS |
| Mfr. Part # | 6MBP35XSF060-50 |
| Model Number | 6MBP35XSF060-50 |
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Product Specification
| Td(off) | 1.15us | Pd - Power Dissipation | 79.1W |
| Td(on) | 800ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | IGBT Module | Operating Temperature | -30℃~+150℃ |
| Pulsed Current- Forward(Ifm) | 70A | Reverse Recovery Time(trr) | 200ns |
| Description | 79.1W 600V IGBT Module Single IGBTs RoHS | Mfr. Part # | 6MBP35XSF060-50 |
| Model Number | 6MBP35XSF060-50 |
The 6MBP35XSF060-50 is a 600V / 35A IGBT Module from the X series, designed for three-phase inverter drives. It features separate emitter types for low-side IGBTs, short circuit protection, temperature sensor output, under-voltage protection, and a fault signal output. The input interface supports TTL (3.3V/5V) with active high logic. This module is ideal for AC motor drives in small power applications, including air conditioners, heat pumps, fans, and ventilators operating within the AC 100-240V range.
| Item | Symbol | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | V CE(chip) | T C=25, per single FWD | - | - | 600 | V |
| I C | T C=25, per single IGBT | - | - | 35 | A | |
| I CP | T C=25, per single IGBT | - | - | 70 | A | |
| V B(*) | Applied between VCCH-COM | - | - | 20 | V | |
| V CCL | Applied between VCCL-COM | - | - | 20 | V | |
| V isol | t = 1min, Note*7 | - | - | 1500 | Vrms | |
| T vj | Operating virtual junction temperature | -40 | - | 150 | C | |
| T C | Operating case temperature | -40 | - | 125 | C | |
| T stg | Storage temperature | -40 | - | 125 | C | |
| P D_IGBT | T C=25, per single IGBT | - | - | 39.6 | W | |
| P D_FWD | T C=25, per single FWD | - | - | 7.2 | W | |
| Electrical Characteristics (Inverter Block) | V CE(sat) | I C = 35A, T vj = 125C | - | 1.40 | - | V |
| t d(on) | I C=35A, T vj=125C | - | 0.80 | - | s | |
| t r | I C=35A, T vj=125C | - | 0.95 | - | s | |
| t d(off) | I C=35A, T vj=125C | - | 1.15 | - | s | |
| t f | I C=35A, T vj=125C | - | 1.35 | - | s | |
| t rr | I F=35A, T vj=125C | - | 1.70 | - | s | |
| V F | T vj=25C | - | 0.80 | - | V | |
| V F | T vj=125C | - | 1.00 | - | V | |
| I C | Zero gate voltage collector current | - | - | 0.50 | mA | |
| I CE | Zero gate voltage collector current | - | - | 1.00 | mA | |
| Electrical Characteristics (Control Circuit Block) | V IN | Input signal voltage | -0.5 | - | 20 | V |
| I IN | Input signal current | - | - | 20 | mA | |
| V FO(L) | Fault output voltage | -0.5 | - | 2.0 | V | |
| V FO(H) | Fault output voltage | 8.8 | - | 10.8 | V | |
| V th(hys) | Input signal threshold hysteresis voltage | 0.5 | - | - | V | |
| t IN(ON) | Operational input pulse width of turn-on | 0.7 | - | - | s | |
| t IN(OFF) | Operational input pulse width of turn-off | 1.0 | - | - | s | |
| I CCHB | Circuit current of bootstrap circuit (per one unit) | - | 1.25 | 1.9 | mA | |
| I CCH | Circuit current of high-side | - | 0.6 | 0.9 | mA | |
| I CCL | Circuit current of low-side | - | 0.6 | 0.9 | mA | |
| Electrical Characteristics (Control Circuit Block Continued) | V IS(ref) | Voltage for current sensing | - | 0.5 | - | V |
| t d(IS) | Over current protection delay time | - | 0.3 | 1.3 | s | |
| V CCL(ON) | V CC under voltage reset level of low-side | 10.8 | - | 13.0 | V | |
| V CCL(OFF) | V CC under voltage trip level of low-side | 8.3 | - | 10.3 | V | |
| V CCH(ON) | V CC under voltage reset level of high-side | 10.0 | - | 12.0 | V | |
| V CCH(OFF) | V CC under voltage trip level of high-side | 8.3 | - | 10.3 | V | |
| V B(ON) | V B under voltage reset level | 10.5 | - | 12.5 | V | |
| V B(OFF) | V B under voltage trip level | 8.8 | - | 10.8 | V | |
| Thermal Characteristics | R th(j-c)_IGBT | Junction to case thermal resistance (per single IGBT) | - | - | 1.58 | /W |
| R th(j-c)_FWD | Junction to case thermal resistance (per single FWD) | - | - | 3.16 | /W | |
| Mechanical Characteristics | Mounting torque of screws | M3 | - | - | 0.59 - 0.98 | Nm |
| Weight | - | - | - | 6 | g | |
| Recommended Operation Conditions | V DC | DC bus voltage | - | - | 400 | V |
| V B(*) | High-side bias voltage for IGBT gate driving | 13.5 | 15.0 | 18.5 | V | |
| V CCH | High-side supply voltage | 13.5 | 15.0 | 16.5 | V | |
| V CCL | Low-side supply voltage | 13.5 | 15.0 | 16.5 | V | |
| t DEAD | Dead time for preventing arm-short | 1.0 | - | - | s | |
| f PWM | PWM input frequency | - | - | 20 | kHz | |
| T vjop | Operating virtual junction temperature | - | - | 150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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