| Pd - Power Dissipation | 650W |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 9.7nF |
| Input Capacitance(Cies) | 9.7nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.2V@150mA |
| Reverse Recovery Time(trr) | 200ns |
| Description | 650W 600V IGBT Module Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | 2MBI150VA-060-50 |
| Package | Screw Terminals |
| Model Number | 2MBI150VA-060-50 |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Pd - Power Dissipation | 650W | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 9.7nF | Input Capacitance(Cies) | 9.7nF |
| IGBT Type | IGBT Module | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.2V@150mA |
| Reverse Recovery Time(trr) | 200ns | Description | 650W 600V IGBT Module Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | 2MBI150VA-060-50 | Package | Screw Terminals |
| Model Number | 2MBI150VA-060-50 |
The Fuji Electric 2MBI150VA-060-50 is a high-speed switching IGBT module designed for voltage drive applications. It features a low inductance module structure and is suitable for various industrial applications including motor drives, servo amplifiers, uninterruptible power supplies, and welding machines.
| Items | Symbols | Conditions | Units | min. | typ. | max. |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter voltage | VCES | V | 600 | |||
| Gate-Emitter voltage | VGES | V | 20 | |||
| Collector current | IC | TC=100C | A | 150 | ||
| IC pulse | 1ms | A | 300 | |||
| -IC | A | 150 | ||||
| -IC pulse | 1ms | A | 300 | |||
| Collector power dissipation | PC | 1 device | W | 650 | ||
| Junction temperature | Tj | C | 175 | |||
| Operating junction temperature (under switching conditions) | Tjop | C | 150 | |||
| Case temperature | TC | C | 125 | |||
| Storage temperature | Tstg | C | -40 | 125 | ||
| Isolation voltage between terminal and copper base (*1) | Viso | AC : 1min. | VAC | 2500 | ||
| Screw torque Mounting (*2) | N m | 5.0 | ||||
| Screw torque Terminals (*3) | N m | 5.0 | ||||
| Electrical Characteristics | ||||||
| Zero gate voltage collector current | ICES | VGE = 0V, VCE = 600V | mA | 1.0 | ||
| Gate-Emitter leakage current | IGES | VCE = 0V, VGE = 20V | nA | 200 | ||
| Gate-Emitter threshold voltage | VGE (th) | VCE = 20V, IC = 150mA | V | 6.2 | 6.7 | 7.2 |
| Collector-Emitter saturation voltage (terminal) | VCE (sat) | VGE = 15V, IC = 150A, Tj=25C | V | 1.75 | 2.20 | |
| Collector-Emitter saturation voltage (terminal) | VCE (sat) | VGE = 15V, IC = 150A, Tj=125C | V | 2.05 | ||
| Collector-Emitter saturation voltage (terminal) | VCE (sat) | VGE = 15V, IC = 150A, Tj=150C | V | 2.25 | ||
| Collector-Emitter saturation voltage (chip) | VCE (sat) | VGE = 15V, IC = 150A, Tj=25C | V | 1.60 | 2.05 | |
| Collector-Emitter saturation voltage (chip) | VCE (sat) | VGE = 15V, IC = 150A, Tj=125C | V | 1.90 | ||
| Collector-Emitter saturation voltage (chip) | VCE (sat) | VGE = 15V, IC = 150A, Tj=150C | V | 2.00 | ||
| Internal gate resistance | RG (int) | 6 | ||||
| Input capacitance | Cies | VCE = 10V, VGE = 0V, f = 1MHz | nF | 9.7 | ||
| Turn-on time | ton | VCC = 300V, LS = 30nH, IC = 150A, VGE = 15V, RG = 9, Tj = 150C | nsec | 650 | ||
| tr | nsec | 300 | ||||
| tr (i) | nsec | 100 | ||||
| Turn-off time | toff | nsec | 600 | |||
| tf | nsec | 40 | ||||
| Forward on voltage (terminal) | VF | VGE = 0V, IF = 150A, Tj=25C | V | 1.70 | 2.15 | |
| Forward on voltage (terminal) | VF | VGE = 0V, IF = 150A, Tj=125C | V | 1.60 | ||
| Forward on voltage (terminal) | VF | VGE = 0V, IF = 150A, Tj=150C | V | 1.57 | ||
| Forward on voltage (chip) | VF | VGE = 0V, IF = 150A, Tj=25C | V | 1.60 | 2.05 | |
| Forward on voltage (chip) | VF | VGE = 0V, IF = 150A, Tj=125C | V | 1.50 | ||
| Forward on voltage (chip) | VF | VGE = 0V, IF = 150A, Tj=150C | V | 1.47 | ||
| Reverse recovery time | trr | IF = 150A | nsec | 200 | ||
| Thermal Resistance Characteristics | ||||||
| Thermal resistance (1device) IGBT | Rth(j-c) | C/W | 0.31 | |||
| Thermal resistance (1device) FWD | Rth(j-c) | C/W | 0.60 | |||
| Contact thermal resistance (1device) (*4) | Rth(c-f) | with Thermal Compound | C/W | 0.050 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!