Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 359ns |
| Pd - Power Dissipation | 1.091kW |
| Td(on) | 183ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 59.4pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.17V@2.24mA |
| Operating Temperature | -40℃~+175℃ |
| Gate Charge(Qg) | 473nC@15V |
| Reverse Recovery Time(trr) | 137ns |
| Switching Energy(Eoff) | 8.9mJ |
| Turn-On Energy (Eon) | 11.9mJ |
| Input Capacitance(Cies) | 16.191nF |
| Pulsed Current- Forward(Ifm) | 560A |
| Output Capacitance(Coes) | 407pF |
| Description | 1.091kW 1.2kV TO-247P Single IGBTs RoHS |
| Mfr. Part # | IXYX120N120C3-HXY |
| Package | TO-247P |
| Model Number | IXYX120N120C3-HXY |
View Detail Information
Explore similar products
High speed IGBT Infineon IKW40N65H5 650 volt 40 amp featuring TRENCHSTOP 5 and
650V High Speed Switching IGBT VBsemi Elec VBP165I80 with Ultra Low Gate Charge
EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and
650V 60A Trench Field Stop IGBT SPTECH SPT60N65F1A1 used in solar welding and
Product Specification
| Td(off) | 359ns | Pd - Power Dissipation | 1.091kW |
| Td(on) | 183ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 59.4pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.17V@2.24mA |
| Operating Temperature | -40℃~+175℃ | Gate Charge(Qg) | 473nC@15V |
| Reverse Recovery Time(trr) | 137ns | Switching Energy(Eoff) | 8.9mJ |
| Turn-On Energy (Eon) | 11.9mJ | Input Capacitance(Cies) | 16.191nF |
| Pulsed Current- Forward(Ifm) | 560A | Output Capacitance(Coes) | 407pF |
| Description | 1.091kW 1.2kV TO-247P Single IGBTs RoHS | Mfr. Part # | IXYX120N120C3-HXY |
| Package | TO-247P | Model Number | IXYX120N120C3-HXY |
The IXYX120N120C3 is a 1200V, 140A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low switching losses, and a low saturation voltage (VCE(SAT)). Copacked with a fast recovery diode, it offers low conduction loss and rugged transient reliability, making it suitable for demanding applications like string solar inverters and EV-charging systems.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector emitter voltage | VCE | @ TVJ = 25C unless otherwise specified | - | - | 1200 | V |
| DC collector current | IC | TC = 25C | - | - | 240 | A |
| DC collector current | IC | TC = 100C | - | - | 140 | A |
| Pulsed collector current | ICM | TC = 25C | - | - | 560 | A |
| Maximum Diode forward current | IF | TC = 25C | - | - | 240 | A |
| Maximum Diode forward current | IF | TC = 100C | - | - | 140 | A |
| Diode pulsed current | IFM | TC = 25C | - | - | 560 | A |
| Gate-Emitter voltage | VGE | TVJ = 25C | - | - | 20 | V |
| Power Dissipation | Ptot | TC = 25C | - | - | 1091 | W |
| Power Dissipation | Ptot | TC = 100C | - | - | 545 | W |
| Operating Junction Temperature Range | TVJ | - | -40 | - | +175 | C |
| Storage Temperature Range | TSTG | - | -55 | - | +150 | C |
| Thermal Resistance | ||||||
| IGBT Thermal resistance: junction - case | RJC | IGBT | - | 0.11 | - | C/W |
| Diode Thermal resistance: junction - case | RJC | Diode | - | 0.17 | - | C/W |
| Electrical Characteristics | ||||||
| Collector - Emitter Breakdown Voltage | V(BR)CES | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 140A, TVJ = 25C | - | 1.55 | - | V |
| Collector - Emitter Saturation Voltage | VCESAT | VGE = 15V , IC = 140A, TVJ = 175C | - | 1.81 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 140A, TVJ = 25C | - | 2.01 | - | V |
| Diode forward voltage | VF | VGE = 0V , IC = 140A, TVJ = 175C | - | 2.19 | - | V |
| Gate-Emitter threshold voltage | VGE(th) | VGE = VCE, IC = 2.24mA | - | 5.17 | - | V |
| Zero Gate voltage Collector current | ICES | VCE = 1200V , VGE = 0V | - | - | 40.0 | mA |
| Gate-Emitter leakage current | IGES | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VGE = 0V, VCE = 25V, f = 100k Hz | - | 16191 | - | pF |
| Output Capacitance | Coes | - | - | 407 | - | pF |
| Reverse Transfer Capacitance | Cres | - | - | 59.4 | - | pF |
| Gate input resistance | RG | f = 1M Hz | - | 0.8 | - | |
| Gate Charge | Qg | VGE = 0 to 15V VCE = 960V, IC = 140A | - | 473 | - | nC |
| Gate to Emitter charge | Qge | - | - | 122 | - | nC |
| Gate to Collector charge | Qgc | - | - | 112 | - | nC |
| Switching Characteristics (TVJ = 25 C) | ||||||
| Turn-On DelayTime | td(on) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 183 | - | ns |
| Turn-On Rise Time | tr | - | - | 241 | - | ns |
| Turn-Off DelayTime | td(off) | - | - | 359 | - | ns |
| Turn-Off Fall Time | tf | - | - | 221 | - | ns |
| Turn-on energy | Eon | - | - | 11.9 | - | mJ |
| Turn-off energy | Eoff | - | - | 8.9 | - | mJ |
| Total switching energy | Ets | - | - | 20.8 | - | mJ |
| Switching Characteristics (TVJ = 175 C) | ||||||
| Turn-On DelayTime | td(on) | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 165 | - | ns |
| Turn-On Rise Time | tr | - | - | 262 | - | ns |
| Turn-Off DelayTime | td(off) | - | - | 395 | - | ns |
| Turn-Off Fall Time | tf | - | - | 274 | - | ns |
| Turn-on energy | Eon | - | - | 12.8 | - | mJ |
| Turn-off energy | Eoff | - | - | 10.1 | - | mJ |
| Total switching energy | Ets | - | - | 22.9 | - | mJ |
| Diode Recovery Characteristics (TVJ = 25 C) | ||||||
| Reverse recovery time | Trr | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 137 | - | ns |
| Reverse recovery charge | Qrr | - | - | 0.81 | - | mC |
| Peak reverse recovery current | Irrm | - | - | 9.3 | - | A |
| Reverse recovery energy | Erec | - | - | 9.3 | - | mJ |
| Diode Recovery Characteristics (TVJ = 175 C) | ||||||
| Reverse recovery time | Trr | VCC = 600 V, IC =140 A, VGE = 0 / 15 V, RG = 10 | - | 511 | - | ns |
| Reverse recovery charge | Qrr | - | - | 5.4 | - | mC |
| Peak reverse recovery current | Irrm | - | - | 17.5 | - | A |
| Reverse recovery energy | Erec | - | - | 1.6 | - | mJ |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!