Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 122ns |
| Pd - Power Dissipation | 300W |
| Td(on) | 24ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 92pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 179nC@15V |
| Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 1.14mJ |
| Turn-On Energy (Eon) | 1.38mJ |
| Input Capacitance(Cies) | 3.363nF |
| Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 206pF |
| Description | 300W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | RGS00TS65EHRC11-HXY |
| Package | TO-247 |
| Model Number | RGS00TS65EHRC11-HXY |
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Product Specification
| Td(off) | 122ns | Pd - Power Dissipation | 300W |
| Td(on) | 24ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 92pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA | Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 179nC@15V | Reverse Recovery Time(trr) | 98ns |
| Switching Energy(Eoff) | 1.14mJ | Turn-On Energy (Eon) | 1.38mJ |
| Input Capacitance(Cies) | 3.363nF | Pulsed Current- Forward(Ifm) | 200A |
| Output Capacitance(Coes) | 206pF | Description | 300W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | RGS00TS65EHRC11-HXY | Package | TO-247 |
| Model Number | RGS00TS65EHRC11-HXY |
The RGS00TS65EHRC11 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applications such as UPS, motor drives, and boost converters, offering features like a positive temperature coefficient, fast switching, low VCE(sat), and a reliable, rugged construction. Available in Halogen Free and Green Devices (RoHS Compliant).
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC | 50 | A | Collector Current @TC=100C |
| ICM | 200 | A | Pulsed Collector Current |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage (Typ.) |
| PD | 300 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (Min-Max) |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=650V, VGE=0V |
| Cies | 3363 | pF | Input Capacitance |
| Qg | 179 | nC | Gate Charge |
| td(on) | 24 | ns | Turn-on Delay Time @TJ=25 |
| tr | 86 | ns | Rise Time @TJ=25 |
| td(off) | 122 | ns | Turn-Off Delay Time @TJ=25 |
| tf | 74 | ns | Fall Time @TJ=25 |
| Eon | 1.38 | mJ | Turn-On Switching Loss @TJ=25 |
| Eoff | 1.14 | mJ | Turn-Off Switching Loss @TJ=25 |
| Trr | 98 | ns | Reverse Recovery Time @TJ=25 |
| Qrr | 1580 | C | Reverse Recovery Charge @TJ=25 |
| Irrm | 26 | A | Reverse Recovery Current @TJ=25 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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