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China 600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit
China 600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit

  1. China 600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit

600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit

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Pd - Power Dissipation 88W
Td(off) 130ns
Td(on) 9ns
Collector-Emitter Breakdown Voltage (Vces) 600V
Reverse Transfer Capacitance (Cres) 11pF
Input Capacitance(Cies) 368pF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.1V@0.18mA
Gate Charge(Qg) 42nC@15V
Output Capacitance(Coes) 28pF
Switching Energy(Eoff) 110uJ
Turn-On Energy (Eon) 90uJ
Description 88W 600V FS (Field Stop) TO-220-3 Single IGBTs RoHS
Mfr. Part # IGP06N60T
Package TO-220-3
Model Number IGP06N60T

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  1. Product Details
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Product Specification

Pd - Power Dissipation 88W Td(off) 130ns
Td(on) 9ns Collector-Emitter Breakdown Voltage (Vces) 600V
Reverse Transfer Capacitance (Cres) 11pF Input Capacitance(Cies) 368pF
IGBT Type FS (Field Stop) Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.1V@0.18mA
Gate Charge(Qg) 42nC@15V Output Capacitance(Coes) 28pF
Switching Energy(Eoff) 110uJ Turn-On Energy (Eon) 90uJ
Description 88W 600V FS (Field Stop) TO-220-3 Single IGBTs RoHS Mfr. Part # IGP06N60T
Package TO-220-3 Model Number IGP06N60T

Product Overview

The IGP06N60T is a TRENCHSTOP Series Low Loss IGBT designed for 600V applications. It features very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. This IGBT utilizes TRENCHSTOP and Fieldstop technology, offering very tight parameter distribution, high ruggedness, and temperature-stable behavior. It also boasts low EMI and is qualified according to JEDEC standards for target applications. The product is Pb-free lead plating and RoHS compliant.

Product Attributes

  • Brand: Infineon Technologies
  • Series: TRENCHSTOP
  • Technology: TRENCHSTOP and Fieldstop
  • Certifications: JEDEC, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCE (V)IC; Tc=100C (A)VCE(sat),Tj=25C (V)Tj,max (C)MarkingPackage
IGP06N60T60061.5175G06T60PG-TO220-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE=0V, IC=0.25mA600V
Collector-emitter saturation voltageVCE(sat)VGE = 15V, IC=6A, Tj=25C1.5V
Collector-emitter saturation voltageVCE(sat)VGE = 15V, IC=6A, Tj=175C1.8V
Gate-emitter threshold voltageVGE(th)IC=0.18mA, VCE=VGE4.1 - 5.7V
Zero gate voltage collector currentICE SVCE=600V, VGE=0V, Tj=25C- 40A
Zero gate voltage collector currentICE SVCE=600V, VGE=0V, Tj=175C- 700A
Gate-emitter leakage currentIGE SVCE=0V,VGE=20V- 100nA
TransconductancegfsVCE=20V, IC=6A- 3.6S
Input capacitanceCissVCE=25V, VGE=0V, f=1MHz- 368pF
Output capacitanceCossVCE=25V, VGE=0V, f=1MHz- 28pF
Reverse transfer capacitanceCrssVCE=25V, VGE=0V, f=1MHz- 11pF
Gate chargeQGat eVCC=480V, IC=6A, VGE=15V- 42nC
Internal emitter inductanceLEmeasured 5mm from case- 7nH
Short circuit collector currentIC(SC)VGE=15V, tSC 5s, VCC = 400V, Tj = 25C- 55A
ParameterSymbolConditionsValue (Tj=25C)Value (Tj=175C)Unit
Turn-on delay timetd(on)VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF99ns
Rise timetrVCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF68ns
Turn-off delay timetd(off)VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF130165ns
Fall timetfVCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF5884ns
Turn-on energyEonVCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF0.090.14mJ
Turn-off energyEoffVCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF0.110.18mJ
Total switching energyEtsVCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF0.20.335mJ

2410121815_Infineon-IGP06N60T_C536072.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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