Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 330W |
| Td(off) | 130ns |
| Td(on) | 20ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Input Capacitance(Cies) | 2.81nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Gate Charge(Qg) | 104nC@15V |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 215pF |
| Reverse Recovery Time(trr) | 95ns |
| Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 2.04mJ |
| Description | 330W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | IRGP4790-EPBF-HXY |
| Package | TO-247 |
| Model Number | IRGP4790-EPBF-HXY |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 330W | Td(off) | 130ns |
| Td(on) | 20ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 23pF | Input Capacitance(Cies) | 2.81nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA | Gate Charge(Qg) | 104nC@15V |
| Pulsed Current- Forward(Ifm) | 300A | Output Capacitance(Coes) | 215pF |
| Reverse Recovery Time(trr) | 95ns | Switching Energy(Eoff) | 920uJ |
| Turn-On Energy (Eon) | 2.04mJ | Description | 330W 650V TO-247 Single IGBTs RoHS |
| Mfr. Part # | IRGP4790-EPBF-HXY | Package | TO-247 |
| Model Number | IRGP4790-EPBF-HXY |
The IRGP4790-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current | TC = 25C | 90 | A | ||
| IC | DC collector current | TC = 100C | 75 | A | ||
| ICM | Pulsed collector current | TC = 25C | 300 | A | ||
| IF | Maximum Diode forward current | TC = 25C | 90 | A | ||
| IF | Maximum Diode forward current | TC = 100C | 75 | A | ||
| IFM | Diode pulsed current | TC = 25C | 300 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | TVJ = 25C (tp 10s, D < 0.010) | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 330 | W | ||
| Ptot | Power Dissipation | TC = 100C | 160 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.45 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.54 | C/W | |||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 125C | 1.86 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 175C | 2.0 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =75A | 1.85 | 2.1 | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 75A ,TVJ = 125C | 1.55 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 75A ,TVJ = 175C | 1.4 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 75 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 75A | 86 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 2810 | - | pF | |
| Coes | Output Capacitance | 215 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 23 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 75A | 104 | - | nC | |
| Qge | Gate to Emitter charge | 15 | - | nC | ||
| Qgc | Gate to Collector charge | 30 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 75A, RG(off) = 8 | 20 | - | ns | |
| tr | Turn-On Rise Time | 30 | - | ns | ||
| td(off) | Turn-Off DelayTime | 130 | - | ns | ||
| tf | Turn-Off Fall Time | 32 | - | ns | ||
| Eon | Turn-on energy | 2.04 | - | mJ | ||
| Eoff | Turn-off energy | 0.92 | - | mJ | ||
| Ets | Total switching energy | 2.96 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 75 A, di/dt = 800 A/S | 95 | - | ns | |
| Qrr | Reverse recovery charge | 1.87 | - | mC | ||
| Irrm | Peak reverse recovery current | 8.0 | - | A | ||
| VF | Device | (TVJ = 25 C, IF=40A) | 1.85 | V | ||
| VCE(SAT) | Package | (TVJ = 25 C, VGE = 15 V) | 1.6 | V | ||
| IC | Packing | (TC = 25 C) | 75 | A | ||
| VCE | Device | 650V | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
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