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Hefei Purple Horn E-Commerce Co., Ltd.

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China Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and
China Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and

  1. China Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and
  2. China Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and
  3. China Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and

Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and

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Td(off) 180ns
Pd - Power Dissipation 205W
Td(on) 50ns
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 0.05nF
Input Capacitance(Cies) 1.45nF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5V@0.8mA
Operating Temperature -40℃~+150℃
Gate Charge(Qg) 0.2uC
Pulsed Current- Forward(Ifm) 50A
Switching Energy(Eoff) 2.2mJ
Turn-On Energy (Eon) 2.9mJ
Description 205W 1.2kV FS (Field Stop) Through Hole,62.8x33.8mm Single IGBTs RoHS
Mfr. Part # FS25R12W1T4_B11
Package Through Hole,62.8x33.8mm
Model Number FS25R12W1T4_B11

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  1. Product Details
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Product Specification

Td(off) 180ns Pd - Power Dissipation 205W
Td(on) 50ns Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 0.05nF Input Capacitance(Cies) 1.45nF
IGBT Type FS (Field Stop) Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5V@0.8mA
Operating Temperature -40℃~+150℃ Gate Charge(Qg) 0.2uC
Pulsed Current- Forward(Ifm) 50A Switching Energy(Eoff) 2.2mJ
Turn-On Energy (Eon) 2.9mJ Description 205W 1.2kV FS (Field Stop) Through Hole,62.8x33.8mm Single IGBTs RoHS
Mfr. Part # FS25R12W1T4_B11 Package Through Hole,62.8x33.8mm
Model Number FS25R12W1T4_B11

Product Overview

The FS25R12W1T4_B11 is an EasyPACK module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with PressFIT and NTC. It offers low switching losses, low VCEsat with a positive temperature coefficient, and a compact design with an Al2O3 substrate for low thermal resistance. This module is suitable for applications such as air conditioning, motor drives, servo drives, and UPS systems.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Al2O3 substrate
  • Color: Not specified
  • Certifications: UL approved (E83335)

Technical Specifications

ParameterValueUnitConditions
IGBT, Inverter
Collector-emitter voltage1200VTvj = 25C
Continuous DC collector current25ATC = 100C, Tvj max = 175C
Continuous DC collector current45ATC = 25C, Tvj max = 175C
Repetitive peak collector current50AtP = 1 ms
Total power dissipation205WTC = 25C, Tvj max = 175C
Gate-emitter peak voltage+/-20V
Collector-emitter saturation voltage1.85 - 2.25VIC = 25 A, VGE = 15 V, Tvj = 25C - 150C
Gate threshold voltage5.0 - 6.5VIC = 0.80 mA, VCE = VGE, Tvj = 25C
Gate charge0.20CVGE = -15 V ... +15 V
Input capacitance1.45nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance0.05nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current1.0mAVCE = 1200 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current400nAVCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time0.05sIC = 25 A, VCE = 600 V, VGE = 15 V, RGon = 20 , Tvj = 25C - 150C
Rise time0.027 - 0.03sIC = 25 A, VCE = 600 V, VGE = 15 V, RGon = 20 , Tvj = 25C - 150C
Turn-off delay time0.18 - 0.29sIC = 25 A, VCE = 600 V, VGE = 15 V, RGoff = 20 , Tvj = 25C - 150C
Fall time0.16 - 0.215sIC = 25 A, VCE = 600 V, VGE = 15 V, RGoff = 20 , Tvj = 25C - 150C
Turn-on energy loss per pulse1.90 - 2.90mJIC = 25 A, VCE = 600 V, LS = 60 nH, VGE = 15 V, RGon = 20 , Tvj = 25C - 150C
Turn-off energy loss per pulse1.40 - 2.20mJIC = 25 A, VCE = 600 V, LS = 60 nH, VGE = 15 V, RGoff = 20 , Tvj = 25C - 150C
Short circuit data90AVGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s
Thermal resistance, junction to case (per IGBT)0.66 - 0.74K/W
Thermal resistance, case to heatsink (per IGBT)0.80K/WPaste = 1 W/(mK)
Temperature under switching conditions-40 - 150C
Diode, Inverter
Repetitive peak reverse voltage1200VTvj = 25C
Continuous DC forward current25A
Repetitive peak forward current50AtP = 1 ms
It - value90.0 - 80.0AsVR = 0 V, tP = 10 ms, Tvj = 125C - 150C
Forward voltage1.75 - 2.25VIF = 25 A, VGE = 0 V, Tvj = 25C - 150C
Peak reverse recovery current39.0 - 41.0AIF = 25 A, - diF/dt = 1200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Recovered charge2.40 - 4.40CIF = 25 A, - diF/dt = 1200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Reverse recovery energy0.90 - 1.70mJIF = 25 A, - diF/dt = 1200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C
Thermal resistance, junction to case (per diode)0.95 - 1.05K/W
Thermal resistance, case to heatsink (per diode)0.85K/WPaste = 1 W/(mK)
Temperature under switching conditions-40 - 150C
NTC-Thermistor
Rated resistance5.00kTC = 25C
Deviation of R100-5 - 5%TC = 100C, R100 = 493
Power dissipation20.0mWTC = 25C
B-value (B25/50)3375K
B-value (B25/80)3411K
B-value (B25/100)3433K
Module
Isolation test voltage2.5kVRMS, f = 50 Hz, t = 1 min.
Creepage distance (terminal to heatsink)11.5mm
Creepage distance (terminal to terminal)6.3mm
Clearance (terminal to heatsink)10.0mm
Clearance (terminal to terminal)5.0mm
Comperative tracking index> 200
Stray inductance module25nHLsCE
Module lead resistance, terminals - chip (per switch)4.50mTC = 25C
Storage temperature-40 - 125C
Weight24g

2411220241_Infineon-FS25R12W1T4-B11_C535474.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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