Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A |
| Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | IRG7PH46U-EP-HXY |
| Package | TO-247 |
| Model Number | IRG7PH46U-EP-HXY |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Gate Charge(Qg) | 346nC@15V |
| Reverse Recovery Time(trr) | 94ns | Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ | Input Capacitance(Cies) | 3.98nF |
| Pulsed Current- Forward(Ifm) | 160A | Output Capacitance(Coes) | 157pF |
| Description | 441W 1.2kV FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | IRG7PH46U-EP-HXY |
| Package | TO-247 | Model Number | IRG7PH46U-EP-HXY |
The IRG7PH46U-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and robust performance, featuring a positive temperature coefficient, fast switching, low VCE(sat), and an operating temperature of up to 175. The device is AEC-Q101 Qualified and available in RoHS Compliant, Halogen Free, and Green options.
| Parameter | Value | Unit | Conditions |
| Key Characteristics | |||
| VCES | 1200 | V | |
| IC | 40 | A | |
| VCE(sat).typ | 1.70 | V | |
| Absolute Ratings | |||
| VCES | 1200 | V | |
| IC (Collector Current @TC=25C) | 80 | A | @TC=25C |
| IC (Collector Current @TC=100C) | 40 | A | @TC=100C |
| ICM (Pulsed Collector Current) | 160 | A | tp limited by TJmax |
| IF (Diode Continuous Forward Current @TC=25C) | 80 | A | @TC=25C |
| IF (Diode Continuous Forward Current @TC=100C) | 40 | A | @TC=100C |
| IFM (Diode Maximum Forward Current) | 160 | A | limited by TJmax |
| VGES (Gate-Emitter Voltage) | 30 | V | |
| tSC (Short circuit withstand time) | 13 | s | VGE=15V, VCC400V, allowed number of short circuits<1000, times between short circuits1.0s, TJ175C |
| PD (Power Dissipation @TC=25C) | 441 | W | @TC=25C |
| TJmax, Tstg (Operating Junction and Storage Temperature Range) | -55 to 175 | ||
| TL (Maximum Temperature for Soldering) | 260 | ||
| Thermal Characteristics | |||
| RJC (Junction-to-Case for IGBT) | 0.34 | /W | |
| RJC (Junction-to-Case for Diode) | 0.80 | /W | |
| RJA (Junction-to-Ambient) | 40 | /W | |
| Electrical Characteristics (Static) | |||
| VCES (Collector-Emitter Breakdown Voltage) | 1200 | V | VGE =0V, IC=1mA |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.70 | V | VGE =15V, IC =40A, TJ=25 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.07 | V | VGE =15V, IC =40A, TJ=125 |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.20 | V | VGE =15V, IC =40A, TJ=175 |
| VGE(TH) (Gate Threshold Voltage) | 4.3 - 6.3 | V | VCE=VGE,IC=1mA |
| VF (Diode Forward Voltage) | 1.85 | V | IF=40A, TJ=25 |
| VF (Diode Forward Voltage) | 1.70 | V | IF=40A, TJ=125 |
| VF (Diode Forward Voltage) | 1.61 | V | IF=40A, TJ=175 |
| ICES (Collector-Emitter Leakage Current) | 10 | A | VCE=1200V, VGE=0V |
| IGES(F) (Gate-Emitter Forward Leakage Current) | 200 | nA | VGE=+20V |
| IGES(R) (Gate-Emitter Reverse Leakage Current) | -200 | nA | VGE=-20V |
| Electrical Characteristics (Dynamic) | |||
| Cies (Input Capacitance) | 3980 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Coes (Output Capacitance) | 157 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Cres (Reverse Transfer Capacitance) | 93 | pF | VGE=0V, VCE=25V, f=1.0MHz |
| Qg (Gate charge) | 346 | nC | VCC=960V, ICE=40A, VGE=15V |
| IGBT Switching Characteristics (TJ=25) | |||
| td(on) (Turn-on Delay Time) | 25 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tr (Rise Time) | 28 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| td(off) (Turn-Off Delay Time) | 262 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tf (Fall Time) | 149 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eon (Turn-On Switching Loss) | 1.30 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eoff (Turn-Off Switching Loss) | 2.30 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Ets (Total Switching Loss) | 3.60 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| IGBT Switching Characteristics (TJ=175) | |||
| td(on) (Turn-on Delay Time) | 26 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tr (Rise Time) | 35 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| td(off) (Turn-Off Delay Time) | 331 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| tf (Fall Time) | 224 | ns | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eon (Turn-On Switching Loss) | 2.20 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Eoff (Turn-Off Switching Loss) | 3.70 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Ets (Total Switching Loss) | 5.90 | mJ | IC=40A, VCC=600V, VGE=15V, Rg=5, Inductive Load |
| Diode Characteristics (TJ=25) | |||
| Trr (Reverse Recovery Time) | 94 | ns | IF=40A, VCC=600V, di/dt=200A/s |
| Qrr (Reverse Recovery Charge) | 225 | nC | IF=40A, VCC=600V, di/dt=200A/s |
| Irrm (Reverse Recovery Current) | 9.7 | A | IF=40A, VCC=600V, di/dt=200A/s |
| Diode Characteristics (TJ=175) | |||
| Trr (Reverse Recovery Time) | 125 | ns | IF=40A, VCC=600V, di/dt=200A/s |
| Qrr (Reverse Recovery Charge) | 277 | nC | IF=40A, VCC=600V, di/dt=200A/s |
| Irrm (Reverse Recovery Current) | 11.2 | A | IF=40A, VCC=600V, di/dt=200A/s |
| Applications | |||
| PTC | Motor drives, OBC | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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