Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 200ns |
| Pd - Power Dissipation | 454W |
| Td(on) | 150ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 130pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@- |
| Operating Temperature | -55℃~+175℃ |
| Gate Charge(Qg) | 150nC@15V |
| Reverse Recovery Time(trr) | 155ns |
| Switching Energy(Eoff) | 2.155mJ |
| Turn-On Energy (Eon) | 2.465mJ |
| Input Capacitance(Cies) | 4.44nF |
| Pulsed Current- Forward(Ifm) | 300A |
| Output Capacitance(Coes) | 2420pF |
| Description | 454W 600V TO-247AC Single IGBTs RoHS |
| Mfr. Part # | IRGP4066DPBF |
| Package | TO-247AC |
| Model Number | IRGP4066DPBF |
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Product Specification
| Td(off) | 200ns | Pd - Power Dissipation | 454W |
| Td(on) | 150ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 130pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@- |
| Operating Temperature | -55℃~+175℃ | Gate Charge(Qg) | 150nC@15V |
| Reverse Recovery Time(trr) | 155ns | Switching Energy(Eoff) | 2.155mJ |
| Turn-On Energy (Eon) | 2.465mJ | Input Capacitance(Cies) | 4.44nF |
| Pulsed Current- Forward(Ifm) | 300A | Output Capacitance(Coes) | 2420pF |
| Description | 454W 600V TO-247AC Single IGBTs RoHS | Mfr. Part # | IRGP4066DPBF |
| Package | TO-247AC | Model Number | IRGP4066DPBF |
The IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these devices offer low switching losses and high efficiency across a wide range of applications. They are suitable for various switching frequencies and provide robust transient performance for enhanced reliability. The IGBTs also exhibit excellent current sharing capabilities in parallel operation.
| Parameter | IRGP4066DPbF / IRGP4066D-EPbF | Units | Conditions |
| VCES Collector-to-Emitter Voltage | 600 | V | |
| IC(Nominal) Continuous Collector Current | 75 | A | Nominal Current |
| IC @ TC = 25C Continuous Collector Current | 140 | A | |
| IC @ TC = 100C Continuous Collector Current | 90 | A | |
| ICM Pulse Collector Current | 225 | A | VGE = 15V |
| ILM Clamped Inductive Load Current | 300 | A | VGE = 20V |
| IF @ TC = 25C Diode Continuous Forward Current | 140 | A | |
| IF @ TC = 100C Diode Continuous Forward Current | 90 | A | |
| IFM Diode Maximum Forward Current | 300 | A | |
| VGE Continuous Gate-to-Emitter Voltage | ±20 | V | |
| VGE Transient Gate-to-Emitter Voltage | ±30 | V | |
| PD @ TC = 25C Maximum Power Dissipation | 454 | W | |
| PD @ TC = 100C Maximum Power Dissipation | 227 | W | |
| TJ Operating Junction Temperature | -55 to +175 | °C | |
| TSTG Storage Temperature Range | -55 to +175 | °C | |
| Soldering Temperature, for 10 sec. | 300 | °C | (0.063 in. (1.6mm) from case) |
| Mounting Torque, 6-32 or M3 Screw | 10 | lbf·in (1.1 N·m) | |
| RJC (IGBT) Thermal Resistance Junction-to-Case | 0.33 | °C/W | (each IGBT) |
| RJC (Diode) Thermal Resistance Junction-to-Case | 1.0 | °C/W | (each Diode) |
| RCS Thermal Resistance, Case-to-Sink | 0.24 | °C/W | (flat, greased surface) |
| RJA Thermal Resistance, Junction-to-Ambient | 40 | °C/W | (typical socket mount) |
| V(BR)CES Collector-to-Emitter Breakdown Voltage | 600 | V | VGE = 0V, IC = 100µA |
| ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage | 0.30 | V/°C | VGE = 0V, IC = 2.0mA (25°C-175°C) |
| VCE(on) Collector-to-Emitter Saturation Voltage | 1.70 (typ) | V | IC = 75A, VGE = 15V, TJ = 25°C |
| VGE(th) Gate Threshold Voltage | 4.0 to 6.5 | V | VCE = VGE, IC = 2.1mA |
| ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient | -21 | mV/°C | VCE = VGE, IC = 2.1mA (25°C - 175°C) |
| gfe Forward Transconductance | 50 | S | VCE = 50V, IC = 75A, PW = 60µs |
| ICES Collector-to-Emitter Leakage Current | 100 | µA | VGE = 0V, VCE = 600V, TJ = 175°C |
| VFM Diode Forward Voltage Drop | 2.23 (typ) | V | IF = 75A, TJ = 25°C |
| IGES Gate-to-Emitter Leakage Current | ±200 | nA | VGE = ±20V |
| Qg Total Gate Charge | 150 to 225 | nC | IC = 75A, VGE = 15V |
| Qge Gate-to-Emitter Charge | 40 to 60 | nC | VGE = 15V |
| Qgc Gate-to-Collector Charge | 60 to 90 | nC | VCC = 400V |
| Eon Turn-On Switching Loss | 2465 to 3360 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| Eoff Turn-Off Switching Loss | 2155 to 3040 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| Etotal Total Switching Loss | 4620 to 6400 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| td(on) Turn-On delay time | 50 to 70 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| tr Rise time | 70 to 90 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| td(off) Turn-Off delay time | 200 to 225 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| tf Fall time | 60 to 80 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C |
| Eon Turn-On Switching Loss | 3870 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| Eoff Turn-Off Switching Loss | 2815 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| Etotal Total Switching Loss | 6685 | µJ | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| td(on) Turn-On delay time | 50 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| tr Rise time | 70 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| td(off) Turn-Off delay time | 240 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| tf Fall time | 70 | ns | IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C |
| Cies Input Capacitance | 4440 | pF | VGE = 0V, f = 1.0MHz |
| Coes Output Capacitance | 245 | pF | VGE = 0V, f = 1.0MHz |
| Cres Reverse Transfer Capacitance | 130 | pF | VGE = 0V, f = 1.0MHz |
| RBSOA Reverse Bias Safe Operating Area | FULL SQUARE | VCC = 480V, Vp = 600V, Rg = 10Ω, VGE = +20V to 0V | |
| SCSOA Short Circuit Safe Operating Area | 5 | µs | VCC = 400V, Vp = 600V, Rg = 10Ω, VGE = +15V to 0V |
| Erec Reverse Recovery Energy of the Diode | 470 | µJ | TJ = 175°C |
| trr Diode Reverse Recovery Time | 155 | ns | VCC = 400V, IF = 75A, VGE = 15V, Rg = 10Ω, L = 60µH |
| Irr Peak Reverse Recovery Current | 27 | A | VCC = 400V, IF = 75A, VGE = 15V, Rg = 10Ω, L = 60µH |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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