Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 785W |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 12.6nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@150mA |
| Reverse Recovery Time(trr) | 150ns |
| Description | 785W 1.2kV Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | 2MBI150VA-120-50 |
| Package | Screw Terminals |
| Model Number | 2MBI150VA-120-50 |
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Product Specification
| Pd - Power Dissipation | 785W | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 12.6nF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@150mA |
| Reverse Recovery Time(trr) | 150ns | Description | 785W 1.2kV Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | 2MBI150VA-120-50 | Package | Screw Terminals |
| Model Number | 2MBI150VA-120-50 |
The 2MBI150VA-120-50 is a high-speed IGBT module (V series) designed for AC-switch applications in UPS and PCS systems. It features voltage drive, low inductance module structure, and a 2-in-1 package, offering efficient and reliable performance.
| Item | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter voltage | V CES | 1200 | V | |||
| Gate-Emitter voltage | V GES | 20 | V | |||
| Collector current (pulse) | I C pulse | 1ms | 150 | A | ||
| Collector power dissipation | P C | T C=100C | 300 | W | ||
| Junction temperature | T j | -40 | 150 | C | ||
| Storage temperature | T stg | -40 | 125 | C | ||
| Isolation voltage | V iso | Between terminal and copper base (AC: 1min.) | 2500 | V | ||
| Screw torque | Mounting Terminals M5 or M6 | 2.55.0 | Nm | |||
| Screw torque | Mounting Terminals M5 | 3.05.0 | Nm | |||
| Electrical Characteristics | ||||||
| Collector-Emitter saturation voltage | V CE(sat) | V GE=15V, I C=150A, T j=150C | 2.05 | V | ||
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=150A, T j=150C | 1.85 | V | ||
| Gate-Emitter threshold voltage | V GE(th) | V CE=20V, I C=150mA | 6.0 | 6.5 | 7.2 | V |
| Zero gate voltage collector current | I CES | V GE=0V, V CE=1200V, T j=125C | 200 | A | ||
| Gate-Emitter leakage current | I GES | V CE=0V, V GE=20V | 1.0 | mA | ||
| Input capacitance | C ies | V CE=10V, VGE=0V, =1MHz | 12.6 | nF | ||
| Turn-on time | t on | V CC=600V, I C=150A, V GE=15V, R g=1.1, T j=150C, L s=30nH | 200 | nsec | ||
| Turn-off time | t off | V CC=600V, I C=150A, V GE=15V, R g=1.1, T j=150C, L s=30nH | 235 | nsec | ||
| Internal gate resistance | R g(int) | 5 | ||||
| Diode Characteristics | ||||||
| Forward on voltage | V F (terminal) | I F=150A, T j=150C | 1.70 | 2.15 | V | |
| Forward on voltage | V F (chip) | I F=150A, T j=150C | 1.85 | V | ||
| Reverse recovery time | t rr | I F=150A, -I C pulse=150A, di/dt=50A/s | 50 | nsec | ||
| Thermal Resistance | ||||||
| Thermal resistance (1device) | R th(j-c) | IGBT | 0.19 | C/W | ||
| Thermal resistance (1device) | R th(j-c) | FWD | 0.31 | C/W | ||
| Contact thermal resistance (1device) | R th(c-f) | with thermal compound | 0.050 | C/W | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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