| Pd - Power Dissipation | 1.97kW |
| Td(off) | 100ns |
| Td(on) | 650ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 25.6nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.2V@400mA |
| Operating Temperature | -55℃~+150℃ |
| Reverse Recovery Time(trr) | 200ns |
| Description | 1.97kW 600V IGBT Module Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | 2MBI400VB-060-50 |
| Package | Screw Terminals |
| Model Number | 2MBI400VB-060-50 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 1.97kW | Td(off) | 100ns |
| Td(on) | 650ns | Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 25.6nF | IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.2V@400mA | Operating Temperature | -55℃~+150℃ |
| Reverse Recovery Time(trr) | 200ns | Description | 1.97kW 600V IGBT Module Screw Terminals Single IGBTs RoHS |
| Mfr. Part # | 2MBI400VB-060-50 | Package | Screw Terminals |
| Model Number | 2MBI400VB-060-50 |
The 2MBI400VB-060-50 is a V series IGBT Power Module designed for high-speed switching applications. It features a 2-in-1 package, voltage drive capability, and a low inductance module structure, making it suitable for AC-switch applications in UPS and PCS systems.
| Item | Symbol | Conditions | Unit | Min. | Typ. | Max. |
| Absolute Maximum Ratings | ||||||
| Collector-Emitter voltage | V CES | V | 600 | |||
| Collector current | I C | Continuous, T C= 25C | A | 400 | ||
| Collector current pulse | -I C pulse | 1ms | A | 800 | ||
| Junction temperature | T j | C | 175 | |||
| Storage temperature | T stg | C | -40 | 125 | ||
| Isolation voltage | V iso | AC: 1min. Between terminal and copper base | V | 2500 | ||
| Screw torque | Mounting Terminals | N m | 2.5 ~ 3.5 | 3.5 | ||
| Electrical Characteristics | ||||||
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=400A, T j=150C | V | 1.62 | 2.20 | |
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=400A, T j=125C | V | 1.65 | ||
| Collector-Emitter saturation voltage | V CE(sat) (chip) | V GE=15V, I C=400A, T j=25C | V | 1.60 | 2.05 | |
| Forward on voltage | V F (chip) | I F=400A, T j=150C | V | 1.50 | 1.75 | |
| Forward on voltage | V F (chip) | I F=400A, T j=125C | V | 1.47 | ||
| Forward on voltage | V F (chip) | I F=400A, T j=25C | V | 1.65 | ||
| Zero gate voltage collector current | I CES | V GE=0V, V CE=600V, T j=150C | mA | 400 | ||
| Zero gate voltage collector current | I CES | V GE=0V, V CE=600V, T j=125C | mA | 300 | ||
| Zero gate voltage collector current | I CES | V GE=0V, V CE=600V, T j=25C | mA | 200 | ||
| Gate-Emitter leakage current | I GES | V CE=0V, V GE=20V | nA | 2.0 | ||
| Gate-Emitter threshold voltage | V GE(th) | V CE=20V, I C=400mA | V | 6.2 | 6.7 | 7.2 |
| Input capacitance | C ies | V CE=10V, V GE=0V, =1MHz | nF | 25.6 | ||
| Turn-on time | t on | V CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nH | nsec | 70 | ||
| Turn-off time | t off | V CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nH | nsec | 100 | ||
| Reverse recovery time | t rr | I F=400A, T j=150C | nsec | 1970 | ||
| Reverse recovery time | t rr | I F=400A, T j=125C | nsec | 800 | ||
| Reverse recovery time | t rr | I F=400A, T j=25C | nsec | |||
| Thermal Resistance Characteristics | ||||||
| Thermal resistance (1device) | R th(j-c) | IGBT | C/W | 0.076 | ||
| Contact thermal resistance (1device) | R th(c-f) | with thermal compound | C/W | 0.025 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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