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Hefei Purple Horn E-Commerce Co., Ltd.

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China 2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed
China 2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed

  1. China 2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed

2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed

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Pd - Power Dissipation 1.97kW
Td(off) 100ns
Td(on) 650ns
Collector-Emitter Breakdown Voltage (Vces) 600V
Input Capacitance(Cies) 25.6nF
IGBT Type IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6.2V@400mA
Operating Temperature -55℃~+150℃
Reverse Recovery Time(trr) 200ns
Description 1.97kW 600V IGBT Module Screw Terminals Single IGBTs RoHS
Mfr. Part # 2MBI400VB-060-50
Package Screw Terminals
Model Number 2MBI400VB-060-50

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Product Specification

Pd - Power Dissipation 1.97kW Td(off) 100ns
Td(on) 650ns Collector-Emitter Breakdown Voltage (Vces) 600V
Input Capacitance(Cies) 25.6nF IGBT Type IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6.2V@400mA Operating Temperature -55℃~+150℃
Reverse Recovery Time(trr) 200ns Description 1.97kW 600V IGBT Module Screw Terminals Single IGBTs RoHS
Mfr. Part # 2MBI400VB-060-50 Package Screw Terminals
Model Number 2MBI400VB-060-50

Product Overview

The 2MBI400VB-060-50 is a V series IGBT Power Module designed for high-speed switching applications. It features a 2-in-1 package, voltage drive capability, and a low inductance module structure, making it suitable for AC-switch applications in UPS and PCS systems.

Product Attributes

  • Brand: Fuji Electric
  • Weight: 240g (typ.)

Technical Specifications

ItemSymbolConditionsUnitMin.Typ.Max.
Absolute Maximum Ratings
Collector-Emitter voltageV CESV600
Collector currentI CContinuous, T C= 25CA400
Collector current pulse-I C pulse1msA800
Junction temperatureT jC175
Storage temperatureT stgC-40125
Isolation voltageV isoAC: 1min. Between terminal and copper baseV2500
Screw torqueMounting TerminalsN m2.5 ~ 3.53.5
Electrical Characteristics
Collector-Emitter saturation voltageV CE(sat) (chip)V GE=15V, I C=400A, T j=150CV1.622.20
Collector-Emitter saturation voltageV CE(sat) (chip)V GE=15V, I C=400A, T j=125CV1.65
Collector-Emitter saturation voltageV CE(sat) (chip)V GE=15V, I C=400A, T j=25CV1.602.05
Forward on voltageV F (chip)I F=400A, T j=150CV1.501.75
Forward on voltageV F (chip)I F=400A, T j=125CV1.47
Forward on voltageV F (chip)I F=400A, T j=25CV1.65
Zero gate voltage collector currentI CESV GE=0V, V CE=600V, T j=150CmA400
Zero gate voltage collector currentI CESV GE=0V, V CE=600V, T j=125CmA300
Zero gate voltage collector currentI CESV GE=0V, V CE=600V, T j=25CmA200
Gate-Emitter leakage currentI GESV CE=0V, V GE=20VnA2.0
Gate-Emitter threshold voltageV GE(th)V CE=20V, I C=400mAV6.26.77.2
Input capacitanceC iesV CE=10V, V GE=0V, =1MHznF25.6
Turn-on timet onV CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nHnsec70
Turn-off timet offV CC=300V, I C=400A, V GE=15V, R g=3.3, T j=150C, L s=30nHnsec100
Reverse recovery timet rrI F=400A, T j=150Cnsec1970
Reverse recovery timet rrI F=400A, T j=125Cnsec800
Reverse recovery timet rrI F=400A, T j=25Cnsec
Thermal Resistance Characteristics
Thermal resistance (1device)R th(j-c)IGBTC/W0.076
Contact thermal resistance (1device)R th(c-f)with thermal compoundC/W0.025

2411220026_Fuji-Electric-2MBI400VB-060-50_C35796235.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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