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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Trench field stop technology BL BLG15T65FUA-A IGBT suitable for brushless DC
China Trench field stop technology BL BLG15T65FUA-A IGBT suitable for brushless DC

  1. China Trench field stop technology BL BLG15T65FUA-A IGBT suitable for brushless DC

Trench field stop technology BL BLG15T65FUA-A IGBT suitable for brushless DC

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Td(off) 234ns
Pd - Power Dissipation 28W
Td(on) 10ns
Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 9pF
Input Capacitance(Cies) 905pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.4V@1mA
Gate Charge(Qg) 38nC@15V
Pulsed Current- Forward(Ifm) 30A
Output Capacitance(Coes) 41pF
Reverse Recovery Time(trr) 68ns
Switching Energy(Eoff) 200uJ
Turn-On Energy (Eon) 250uJ
Description 28W 650V TO-220F Single IGBTs RoHS
Mfr. Part # BLG15T65FUA-A
Package TO-220F
Model Number BLG15T65FUA-A

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  1. Product Details
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Product Specification

Td(off) 234ns Pd - Power Dissipation 28W
Td(on) 10ns Collector-Emitter Breakdown Voltage (Vces) 650V
Reverse Transfer Capacitance (Cres) 9pF Input Capacitance(Cies) 905pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 4.4V@1mA Gate Charge(Qg) 38nC@15V
Pulsed Current- Forward(Ifm) 30A Output Capacitance(Coes) 41pF
Reverse Recovery Time(trr) 68ns Switching Energy(Eoff) 200uJ
Turn-On Energy (Eon) 250uJ Description 28W 650V TO-220F Single IGBTs RoHS
Mfr. Part # BLG15T65FUA-A Package TO-220F
Model Number BLG15T65FUA-A

BLG15T65FUA IGBT

The BLG15T65FUA is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench Field Stop (T-FS) technology. This technology provides characteristics such as low VCE(sat), optimized switching performance, and low gate charge (Qg). The device is well-suited for applications requiring high switching frequencies, including Brushless DC (BLDC) motors, Uninterruptible Power Supplies (UPS), and motor drives.

Product Attributes

  • Brand: Belling
  • Origin: China (implied by www.belling.com.cn)
  • Technology: Trench Field Stop (T-FS)
  • Certifications: RoHS product

Technical Specifications

Parameter Value Unit Notes
Key Characteristics
VCES 650 V
IC 15 A
VCE(sat).typ 1.55 V
Features
Switching Speed Fast
VCE(sat) Low
Temperature Coefficient Positive
Diode Fast recovery anti-parallel
Applications
BLDC Yes
UPS Yes
Motor drives Yes
Portable power Yes
Ordering Information
Device Marking 15T65FUA
Product Code BLG15T65FUA
Package Options TO-220F, TO-263, TO-220
Packing Options Tube, Reel
Absolute Ratings
Parameter TO-220/TO-263 TO-220F Unit
VCES 650 650 V
IC @TC=25C 30 30 A
IC @TC=100C 15 15 A
ICM (Pulsed) 60 60 A
IF @TC=25C 15 15 A
IF @TC=100C 7.5 7.5 A
IFM (Diode Max) 30 30 A
VGES ±30 ±30 V
tSC (Short circuit) 5.0 µs
PD @TC=25C 78 28 W
TJmax, Tstg 150, –55 to 150 °C
TL (Soldering) 260 °C
Thermal Characteristics
Parameter TO-220/TO-263 TO-220F Unit
RθJC (IGBT) 1.6 4.4 °C/W
RθJC (Diode) 2.1 3.9 °C/W
RθJA 62.5 78 °C/W
Electrical Characteristics (TC = 25°C, unless otherwise specified)
Symbol Parameter Values Unit
VCES Collector-Emitter Breakdown Voltage 650 V
VCE(sat) Collector-Emitter Saturation Voltage 1.55 (typ. @TJ=25°C) V
VGE(TH) Gate Threshold Voltage 4.4 - 5.9 V
VF Diode Forward Voltage 2.00 (typ. @TJ=25°C) V
ICES Collector-Emitter Leakage Current ≤ 15 µA
IGES(F) Gate-Emitter Forward Leakage Current ≤ 200 nA
IGES(R) Gate-Emitter Reverse Leakage Current ≤ -200 nA
Dynamic Characteristics
Symbol Parameter Values Unit
Ciss Input Capacitance 905 (typ.) pF
Coss Output Capacitance 41 (typ.) pF
Crss Reverse Transfer Capacitance 9 (typ.) pF
QG Gate charge 38 (typ.) nC
IGBT Switching Characteristics (TJ=25°C)
Symbol Parameter Values Unit
td(on) Turn-on Delay Time 10 (typ.) ns
tr Rise Time 15 (typ.) ns
td(off) Turn-Off Delay Time 234 (typ.) ns
tf Fall Time 17 (typ.) ns
Eon Turn-On Switching Loss 0.25 (typ.) mJ
Eoff Turn-Off Switching Loss 0.20 (typ.) mJ
Ets Total Switching Loss 0.45 (typ.) mJ
IGBT Switching Characteristics (TJ=150°C)
Symbol Parameter Values Unit
td(on) Turn-on Delay Time 11 (typ.) ns
tr Rise Time 13 (typ.) ns
td(off) Turn-Off Delay Time 259 (typ.) ns
tf Fall Time 66 (typ.) ns
Eon Turn-On Switching Loss 0.39 (typ.) mJ
Eoff Turn-Off Switching Loss 0.27 (typ.) mJ
Ets Total Switching Loss 0.66 (typ.) mJ
Diode Characteristics (TJ=25°C)
Symbol Parameter Values Unit
Trr Reverse Recovery Time (IF=8A) 68 (typ.) ns
Qrr Reverse Recovery Charge (IF=8A) 198 (typ.) nC
Irrm Reverse Recovery Current (IF=8A) 5.0 (typ.) A
Trr Reverse Recovery Time (IF=15A) 72 (typ.) ns
Qrr Reverse Recovery Charge (IF=15A) 214 (typ.) nC
Irrm Reverse Recovery Current (IF=15A) 5.2 (typ.) A
Diode Characteristics (TJ=150°C)
Symbol Parameter Values Unit
Trr Reverse Recovery Time (IF=8A) 161 (typ.) ns
Qrr Reverse Recovery Charge (IF=8A) 609 (typ.) nC
Irrm Reverse Recovery Current (IF=8A) 7.0 (typ.) A
Trr Reverse Recovery Time (IF=15A) 221 (typ.) ns
Qrr Reverse Recovery Charge (IF=15A) 866 (typ.) nC
Irrm Reverse Recovery Current (IF=15A) 7.8 (typ.) A

2507211541_BL-BLG15T65FUA-A_C49328362.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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