Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 468W |
| Td(off) | 114ns |
| Td(on) | 32ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 36pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@1mA |
| Gate Charge(Qg) | 145nC@15V |
| Reverse Recovery Time(trr) | 46ns |
| Switching Energy(Eoff) | 1.53mJ |
| Turn-On Energy (Eon) | 1.14mJ |
| Input Capacitance(Cies) | 3.93nF |
| Pulsed Current- Forward(Ifm) | 240A |
| Output Capacitance(Coes) | 200pF |
| Description | 468W 650V FS (Field Stop) TO-247 Single IGBTs RoHS |
| Mfr. Part # | BLG75T65FDL-F |
| Package | TO-247 |
| Model Number | BLG75T65FDL-F |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 468W | Td(off) | 114ns |
| Td(on) | 32ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 36pF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.7V@1mA | Gate Charge(Qg) | 145nC@15V |
| Reverse Recovery Time(trr) | 46ns | Switching Energy(Eoff) | 1.53mJ |
| Turn-On Energy (Eon) | 1.14mJ | Input Capacitance(Cies) | 3.93nF |
| Pulsed Current- Forward(Ifm) | 240A | Output Capacitance(Coes) | 200pF |
| Description | 468W 650V FS (Field Stop) TO-247 Single IGBTs RoHS | Mfr. Part # | BLG75T65FDL-F |
| Package | TO-247 | Model Number | BLG75T65FDL-F |
The BLG75T65FDL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench Field Stop (T-FS) technology. It offers low VCE(sat), optimized switching performance, and low gate charge (Qg). This IGBT is well-suited for applications such as photovoltaic converters, Uninterruptible Power Supplies (UPS), Boost converters, and other high switching frequency applications. Key characteristics include a VCES of 650V and an IC of 75A, with a typical VCE(sat) of 1.7V.
| Parameter | Value | Unit |
|---|---|---|
| Key Characteristics | ||
| VCES | 650 | V |
| IC | 75 | A |
| VCE(sat).typ | 1.7 | V |
| Absolute Ratings | ||
| VCES (Collector-Emitter Voltage) | 650 | V |
| IC (Collector Current @TC=25C) | 150 | A |
| IC (Collector Current @TC=100C) | 75 | A |
| ICM (Pulsed Collector Current, tp limited by TJmax) | 240 | A |
| IF (Diode Continuous Forward Current @TC=25C) | 150 | A |
| IF (Diode Continuous Forward Current @TC=100C) | 75 | A |
| IFM (Diode Maximum Forward Current, limited by T Jmax) | 240 | A |
| VGES (Gate-Emitter Voltage) | ±30 | V |
| tSC (Short circuit withstand time) | 8.0 | µs |
| PD (Power Dissipation @TC=25C) | 468 | W |
| TJmax, Tstg (Operating Junction and Storage Temperature Range) | 175, –55 to 175 | °C |
| TL (Maximum Temperature for Soldering) | 260 | °C |
| Thermal Characteristics | ||
| RθJC (Junction-to-Case (IGBT)) | 0.32 | °C/W |
| RθJC (Junction-to-Case (Diode)) | 0.65 | °C/W |
| RθJA (Junction-to-Ambient) | 40 | °C/W |
| Electrical Characteristics (TC = 25°C, unless otherwise specified) | ||
| VCES (Collector-Emitter Breakdown Voltage) | 650 | V |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 1.70 (Typ. @TJ=25°C) | V |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.10 (Typ. @TJ=125°C) | V |
| VCE(sat) (Collector-Emitter Saturation Voltage) | 2.20 (Typ. @TJ=175°C) | V |
| VGE(TH) (Gate Threshold Voltage) | 4.7 - 6.2 | V |
| VF (Diode Forward Voltage @IF=40A) | 2.20 (Typ. @TJ=25°C) | V |
| VF (Diode Forward Voltage @IF=40A) | 1.80 (Typ. @TJ=125°C) | V |
| VF (Diode Forward Voltage @IF=40A) | 1.60 (Typ. @TJ=175°C) | V |
| VF (Diode Forward Voltage @IF=75A) | 2.60 (Typ. @TJ=25°C) | V |
| VF (Diode Forward Voltage @IF=75A) | 2.20 (Typ. @TJ=125°C) | V |
| VF (Diode Forward Voltage @IF=75A) | 2.00 (Typ. @TJ=175°C) | V |
| ICES (Collector-Emitter Leakage Current) | <35 | µA |
| IGES(F) (Gate-Emitter Forward Leakage Current) | <200 | nA |
| IGES(R) (Gate-Emitter Reverse Leakage Current) | >-200 | nA |
| Dynamic Characteristics | ||
| Ciss (Input Capacitance) | 3930 (Typ.) | pF |
| Coss (Output Capacitance) | 200 (Typ.) | pF |
| Crss (Reverse Transfer Capacitance) | 36 (Typ.) | pF |
| QG (Gate charge) | 145 (Typ.) | nC |
| IC(SC) (Short circuit collector current) | 375 | A |
| IGBT Switching Characteristics (TJ=25°C) | ||
| td(on) (Turn-on Delay Time) | 32 (Typ.) | ns |
| tr (Rise Time) | 74 (Typ.) | ns |
| td(off) (Turn-Off Delay Time) | 114 (Typ.) | ns |
| tf (Fall Time) | 73 (Typ.) | ns |
| Eon (Turn-On Switching Loss) | 1.14 (Typ.) | mJ |
| Eoff (Turn-Off Switching Loss) | 1.53 (Typ.) | mJ |
| Ets (Total Switching Loss) | 2.67 (Typ.) | mJ |
| IGBT Switching Characteristics (TJ=175°C) | ||
| td(on) (Turn-on Delay Time) | 32 (Typ.) | ns |
| tr (Rise Time) | 75 (Typ.) | ns |
| td(off) (Turn-Off Delay Time) | 161 (Typ.) | ns |
| tf (Fall Time) | 141 (Typ.) | ns |
| Eon (Turn-On Switching Loss) | 1.40 (Typ.) | mJ |
| Eoff (Turn-Off Switching Loss) | 1.85 (Typ.) | mJ |
| Ets (Total Switching Loss) | 3.25 (Typ.) | mJ |
| Diode Characteristics (TJ=25°C) | ||
| Trr (Reverse Recovery Time @IF=40A) | 39 (Typ.) | ns |
| Qrr (Reverse Recovery Charge @IF=40A) | 126 (Typ.) | nC |
| Irrm (Reverse Recovery Current @IF=40A) | 3.5 (Typ.) | A |
| Trr (Reverse Recovery Time @IF=75A) | 46 (Typ.) | ns |
| Qrr (Reverse Recovery Charge @IF=75A) | 146 (Typ.) | nC |
| Irrm (Reverse Recovery Current @IF=75A) | 5.3 (Typ.) | A |
| Diode Characteristics (TJ=175°C) | ||
| Trr (Reverse Recovery Time @IF=40A) | 216 (Typ.) | ns |
| Qrr (Reverse Recovery Charge @IF=40A) | 175 (Typ.) | nC |
| Irrm (Reverse Recovery Current @IF=40A) | 4.5 (Typ.) | A |
| Trr (Reverse Recovery Time @IF=75A) | 243 (Typ.) | ns |
| Qrr (Reverse Recovery Charge @IF=75A) | 210 (Typ.) | nC |
| Irrm (Reverse Recovery Current @IF=75A) | 5.8 (Typ.) | A |
| Ordering Information | ||
| Device Marking | 75T65FDL | |
| Ordering Codes | BLG75T65FDL-F | |
| Package | TO-247 | |
| Product Code | BLG75T65FDL | |
| Packing | Tube | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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