Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 540ns |
| Pd - Power Dissipation | 375W |
| Td(on) | 125ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 6.92nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.45V |
| Operating Temperature | - |
| Gate Charge(Qg) | 254nC |
| Reverse Recovery Time(trr) | 121ns |
| Switching Energy(Eoff) | 2.13mJ |
| Turn-On Energy (Eon) | 2.38mJ |
| Description | IGBT FS (Field Stop) 650V 60A 375W Through Hole TO-247 |
| Mfr. Part # | AGW60N65 |
| Package | TO-247 |
| Model Number | AGW60N65 |
View Detail Information
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Product Specification
| Td(off) | 540ns | Pd - Power Dissipation | 375W |
| Td(on) | 125ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 6.92nF | IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.45V | Operating Temperature | - |
| Gate Charge(Qg) | 254nC | Reverse Recovery Time(trr) | 121ns |
| Switching Energy(Eoff) | 2.13mJ | Turn-On Energy (Eon) | 2.38mJ |
| Description | IGBT FS (Field Stop) 650V 60A 375W Through Hole TO-247 | Mfr. Part # | AGW60N65 |
| Package | TO-247 | Model Number | AGW60N65 |
Product Overview
The AGW60N65 is a Trench-FS Cool-Watt IGBT designed for demanding power applications. It features low VCESAT and low switching losses, enhanced by its CoolWatt Trench-FS technology. The device includes an anti-parallel fast recovery diode and offers a positive temperature coefficient for high reliability. It is ideal for use in inverter power supplies and industrial welding applications.
Product Attributes
| Parameter | Value | Unit |
|---|---|---|
| VCES | 650 | V |
| VCE(sat) | 1.4 | V |
| VGE(th) | 5.45 | V |
| Qg,typ | 254 | nC |
| ICpuls | 180 | A |
| Part Name | AGW60N65 | - |
| Package | TO247 | - |
| Marking | AGW60N65 | - |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCES | 650 | - | - | V | TC=25C |
| DC collector current | IC | - | 120 | - | A | TC=25C |
| - | 60 | - | A | TC=100C | ||
| Pulse collector current | ICpuls | - | - | 180 | A | Tvj150 |
| Repetitive peak reverse voltage | VRRM | 650 | - | - | V | TC=25C |
| Diode continuous forward current | IF | - | - | 120 | A | TC=25C |
| - | - | 60 | A | TC=100C | ||
| Diode pulse current | IFpuls | - | - | 180 | A | Tvj150 |
| Gate-emitter voltage | VGE | -20 | - | 20 | V | static |
| -30 | - | 30 | V | Transienttp10uS,D0.01 | ||
| Power dissipation | Ptot | - | - | 375 | W | TC=25C |
| Storage temperature | Tstg | -50 | - | 150 | C | - |
| Operating junction temperature | Tj | -40 | - | 175 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| IGBT thermal resistance junction - case | RthJC-IGBT | - | - | 0.40 | K/W | - |
| FRD thermal resistance junction - case | RthJC-FRD | - | - | 0.90 | K/W | - |
| Thermal resistance junction - ambient | RthJA | - | - | 40 | K/W | - |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 650 | - | - | V | VGE = 0V,IC=0.5mA,Tvj=25 |
| Collector-emitter saturation voltage | VCE(sat) | - | 1.4 | 2 | V | VGE=15V, IC=30A, Tvj=25 |
| - | 1.95 | - | V | VGE=15V, IC=30A, Tvj=150 | ||
| Gate-emitter threshold voltage | VGE(th) | 5.05 | 5.45 | 5.85 | V | VGE= VCE,IC=1.5mA,Tvj=25 |
| Diode forward voltage | VF | - | 1.75 | 2.15 | V | VGE= 0V,IF=30A, Tvj=25 |
| - | 1.65 | - | V | VGE= 0V,IF=30A,Tvj=150 | ||
| Zero collector voltage gate current | IGES | - | - | 200 | nA | VGE=30V,VCE=0V |
| Zero gate voltage collector current | ICES | - | - | 0.5 | mA | VCE =650V,VGE=0V, Tvj=25 |
| - | - | 1.0 | mA | VCE =650V,VGE=0V, Tvj=150 | ||
| Integrated gate resistor | RGin | 0 |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Cies | - | 6920 | - | pF | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 |
| Output capacitance | Coes | - | 199 | - | pF | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 |
| Reverse transfer capacitance | Cres | - | 88 | - | pF | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 |
| Gate charge | Qg | - | 254 | - | nC | VGE=0/15V,Vcc=520V,IC=60A,Tvj=25 |
| Gate-emitter charge | Qge | - | 40.2 | - | nC | VGE=0/15V,Vcc=520V,IC=60A,Tvj=25 |
| Gate-collector charge | Qgc | - | 132 | - | nC | VGE=0/15V,Vcc=520V,IC=60A,Tvj=25 |
| Gate-emitter plateau voltage | VGE(pl) | - | 8.80 | - | V | IC =60A,VCE=520V,VGE=0/15V,Tvj=25 |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Turn-on delay time | Td(on) | 125 | ns | Vcc=400V,Ic=60A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | ||
| Rise time | Tr | 136 | ns | - | ||
| Turn-off delay time | Td(off) | 540 | ns | - | ||
| Fall time | tf | 71 | ns | - | ||
| Turn-on energy | Eon | 2.38 | mJ | - | ||
| Turn-off energy | Eoff | 2.13 | mJ | - | ||
| Total switch energy | Etotal | 4.51 | mJ | - |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Turn-on delay time | Td(on) | 113 | ns | Vcc=400V,Ic=60A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | ||
| Rise time | Tr | 135 | ns | - | ||
| Turn-off delay time | Td(off) | 612 | ns | - | ||
| Fall time | tf | 86 | ns | - | ||
| Turn-on energy | Eon | 3.10 | mJ | - | ||
| Turn-off energy | Eoff | 2.64 | mJ | - | ||
| Total switch energy | Etotal | 5.74 | mJ | - |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Reverse recovery energy | Erec | 137 | uJ | IF =30A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | ||
| Diode reverse recovery time | trr | 96 | nS | - | ||
| Diode reverse recovery charge | Qrr | 562 | nC | - | ||
| Diode peak reverse recovery current | Irrm | 11.6 | A | - | ||
| Diode peak rate of fall of reverse Recovery current during trr | dirr/dt | 217 | A/uS | - |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Reverse recovery energy | Erec | 323 | uJ | IF =30A,VR=400V, VGE =0/15V,RON=20,Tvj=150 | ||
| Diode reverse recovery time | trr | 121 | nS | - | ||
| Diode reverse recovery charge | Qrr | 1567 | nC | - | ||
| Diode peak reverse recovery current | Irrm | 19.4 | A | - | ||
| Diode peak rate of fall of reverse Recovery current during trr | dirr/dt | 154 | A/uS | - |
PG-TO247(HT)
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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