Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 139.7ns |
| Pd - Power Dissipation | 484W |
| Td(on) | 22.2ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 19pF |
| Input Capacitance(Cies) | 4.093nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@500uA |
| Operating Temperature | - |
| Gate Charge(Qg) | 135nC@15V |
| Output Capacitance(Coes) | 73pF |
| Switching Energy(Eoff) | 770uJ |
| Turn-On Energy (Eon) | 740uJ |
| Description | 484W 650V FS (Field Stop) TO-220-3 Single IGBTs RoHS |
| Mfr. Part # | BGH65N50L1 |
| Package | TO-220-3 |
| Model Number | BGH65N50L1 |
View Detail Information
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Product Specification
| Td(off) | 139.7ns | Pd - Power Dissipation | 484W |
| Td(on) | 22.2ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 19pF | Input Capacitance(Cies) | 4.093nF |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@500uA |
| Operating Temperature | - | Gate Charge(Qg) | 135nC@15V |
| Output Capacitance(Coes) | 73pF | Switching Energy(Eoff) | 770uJ |
| Turn-On Energy (Eon) | 740uJ | Description | 484W 650V FS (Field Stop) TO-220-3 Single IGBTs RoHS |
| Mfr. Part # | BGH65N50L1 | Package | TO-220-3 |
| Model Number | BGH65N50L1 |
The Bestirpower BGH65N50L1 is a high-performance Trench FS IGBT designed for demanding power electronics applications. Leveraging Bestirpower's advanced technology, this IGBT achieves exceptionally low gate charge, leading to significantly higher efficiency through optimized gate charge management. Its user-friendly design contributes to low EMI and reduced switching losses, making it an ideal choice for designers seeking robust and efficient solutions. Key applications include resonant converters, uninterruptible power supplies (UPS), and welding converters.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit | Note |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| VCE | Collector-emitter voltage | (Tvj 25 C) | 650 | V | |||
| VGE | Gate-emitter voltage | 20 | V | ||||
| IC | DC collector current, limited by Tvjmax | TC = 25 | 80 | A | |||
| IC | DC collector current, limited by Tvjmax | TC = 100 | 50 | A | |||
| ICpulse | Pulsed collector current, tp limited by Tvjmax | 200 | A | ||||
| Ptot | Power Dissipation | TC = 25 | 484 | W | Fig.8 | ||
| Ptot | Power Dissipation | TC = 100 | 242 | W | |||
| TJ | Junction temperature range | -40 | ~ | 175 | |||
| TSTG | Storage temperature range | -40 | ~ | 175 | |||
| Thermal Resistance | |||||||
| RthJC | IGBT thermal resistance, junction-case | 0.31 | /W | ||||
| RthJA | Thermal resistance, junction-to-ambient | 41.43 | /W | ||||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | |||||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | |||||||
| V(BR)CES | Collector-emitter Breakdown Voltage | VGE=0V, IC=200A | 650 | - | - | V | |
| ICES | Collector Cut-off Current | VCE=650V, VGS=0V | - | - | 50 | A | |
| IGES | Gate-emitter Leakage Current | VGE=20V, VGE=0V | - | - | 100 | nA | |
| VGE(TH) | Gate Threshold Voltage | VCE=VGE, IC=500A | 3.2 | 4.0 | 4.8 | V | Fig.5 |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC=50A, TJ=25 | - | 1.4 | 1.75 | V | Fig.4 |
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE=15V, IC=50A, TJ=175 | - | 1.58 | - | V | |
| Dynamic Characteristics | |||||||
| Cies | Input Capacitance | VCE=25V, VGE=0V, f=1MHz | - | 4093 | - | pF | Fig.6 |
| Coes | Output Capacitance | - | 73 | - | pF | ||
| Cres | Reverse Transfer Capacitance | - | 19 | - | pF | ||
| Switching Parameters | |||||||
| td(on) | Turn-on Delay Time | VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=25 | - | 22.2 | - | ns | |
| td(on) | Turn-on Delay Time | VCE=400V, IDC=50A, RG=8, VGE=0/+15V, TJ=150 | - | 21.8 | - | ns | |
| tr | Rise Time | TJ=25 | - | 30.2 | - | ns | |
| tr | Rise Time | TJ=150 | - | 32.1 | - | ns | |
| td(off) | Turn-off Delay Time | TJ=25 | - | 139.7 | - | ns | |
| td(off) | Turn-off Delay Time | TJ=150 | - | 164.7 | - | ns | |
| tf | Fall Time | TJ=25 | - | 63.5 | - | ns | |
| tf | Fall Time | TJ=150 | - | 97.3 | - | ns | |
| Eon | Turn-on Switching Energy | TJ=25 | - | 0.74 | - | mJ | |
| Eon | Turn-on Switching Energy | TJ=150 | - | 0.84 | - | mJ | |
| Eoff | Turn-off Switching Energy | TJ=25 | - | 0.77 | - | mJ | |
| Eoff | Turn-off Switching Energy | TJ=150 | - | 1.17 | - | mJ | |
| Gate Charge Characteristics | |||||||
| Qg | Gate Charge Total | VCC=520V, IC=50A, VGE=0 to 15V | - | 135 | - | nC | Fig.7 |
| Qgc | Gate-emitter charge | - | 35 | - | nC | ||
| Qge | Gate-collector charge | - | 22 | - | nC | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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