Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 410ns |
| Pd - Power Dissipation | 2.142kW |
| Td(on) | 120ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 62.5nF@25V |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@8mA |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 3750nC@600A |
| Switching Energy(Eoff) | 58.5mJ |
| Turn-On Energy (Eon) | 17mJ |
| Description | IGBT IGBT Module 1.2kV 800A 2142W Screw Terminals |
| Mfr. Part # | BS600HF120B2SDX |
| Package | Screw Terminals |
| Model Number | BS600HF120B2SDX |
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Product Specification
| Td(off) | 410ns | Pd - Power Dissipation | 2.142kW |
| Td(on) | 120ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 62.5nF@25V | IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@8mA | Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 3750nC@600A | Switching Energy(Eoff) | 58.5mJ |
| Turn-On Energy (Eon) | 17mJ | Description | IGBT IGBT Module 1.2kV 800A 2142W Screw Terminals |
| Mfr. Part # | BS600HF120B2SDX | Package | Screw Terminals |
| Model Number | BS600HF120B2SDX |
The Bestirpower BS600HF120B2SDX is a 1200V, 600A half-bridge IGBT module designed for high-frequency applications. Featuring ultrafast switching speeds, it is ideal for demanding industrial uses such as welding, inductive heating, and Uninterruptible Power Supplies (UPS). Key advantages include a positive temperature coefficient for VCE(sat), low switching losses, high current capability, and excellent short-circuit ruggedness.
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| Collector-Emitter Voltage (VCES) | 1200 | V | |
| Gate-Emitter Voltage (VGES) | ±20 | V | Continuous |
| Continuous Collector Current (IC) | 800 | A | (TC=25°C) |
| 600 | A | (TC=90°C) | |
| Maximum Power Dissipation (PD) | 2142 | W | (TC=25°C) |
| (TJ=175°C) | |||
| Short Circuit Withstand Time (tsc) | 10 | μs | |
| Maximum IGBT Junction Temperature (TJ) | 175 | °C | |
| Maximum Operating Junction Temperature Range (TJOP) | -40 to +150 | °C | |
| Storage Temperature Range (Tstg) | -40 to +125 | °C | |
| Diode Repetitive Peak Reverse Voltage (VRRM) | 1200 | V | Preliminary Data |
| Diode Continuous Forward Current (IF) | 600 | A | (TC=25°C) |
| Diode Maximum Forward Current (IFM) | 1200 | A | |
| IGBT Electrical Characteristics (TC=25°C unless otherwise noted) | |||
| Collector-Emitter Breakdown Voltage (BVCES) | 1200 | V | VGE=0V, IC=1mA |
| Collector-Emitter Leakage Current (ICES) | 1 | mA | VCE=1200V, VGE=0V |
| Gate-Emitter Leakage Current (IGES) | ±400 | nA | VGE=20V, VCE=0V |
| Gate Threshold Voltage (VGE(th)) | 4.8 - 6.6 | V | VGE=VCE, IC=8mA (Typ. 5.7V) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.65 - 2.00 | V | VGE=15V, IC=600A (Typ. 1.65V at TJ=25°C, Typ. 2.00V at TJ=150°C) |
| Turn-on Delay Time (td(on)) | 0.12 - 0.13 | μs | (Typ. at TJ=25°C and 150°C) |
| Turn-on Rise Time (tr) | 0.06 - 0.07 | μs | (Typ. at TJ=25°C and 150°C) |
| Turn-off Delay Time (td(off)) | 0.41 - 0.46 | μs | (Typ. at TJ=25°C and 150°C) |
| Turn-off Fall Time (tf) | 0.24 - 0.39 | μs | (Typ. at TJ=25°C and 150°C) |
| Turn-on Switching Loss (Eon) | 17.0 - 31.5 | mJ | (Typ. at TJ=25°C and 150°C) |
| Turn-off Switching Loss (Eoff) | 58.5 - 74.0 | mJ | (Typ. at TJ=25°C and 125°C) |
| Total Gate Charge (Qg) | 3750 | nC | (Typ. at TJ=25°C) |
| Input Capacitance (Cies) | 62.5 | nF | (Typ. at TJ=25°C) |
| Reverse Transfer Capacitance (Cres) | 0.45 | (Typ.) | |
| Integrated Gate Resistor (RGint) | 1.0 | Ω | (Typ.) |
| Thermal Resistance, Junction-to-Case (IGBT) (RthJC) | 0.07 | °C/W | Per IGBT |
| Thermal resistance, case to heatsink (RthCH) | 0.05 | °C/W | Per IGBT, λgrease = 1 W/(m·K) |
| Short circuit data (Isc) | 2000 | A | VGE=15V, VCC=800V, tp≤10μs |
| Diode Electrical Characteristics (TC=25°C unless otherwise noted) | |||
| Diode Forward Voltage (VF) | 1.60 - 1.95 | V | IF=600A (Typ. 1.60V at TJ=25°C, Typ. 1.55V at TJ=150°C) |
| Diode peak Reverse Recovery Current (Irr) | 711 - 785 | A | (Typ. at TJ=25°C and 150°C) |
| Diode Reverse Recovery Charge (Qrr) | 95.0 - 150 | μC | (Typ. at TJ=25°C and 150°C) |
| Diode Reverse Recovery Energy (Err) | 56.0 - 80.0 | mJ | (Typ. at TJ=25°C and 150°C) |
| Thermal Resistance, Junction-to-Case (Diode) (RthJC) | 0.087 | °C/W | Per Diode |
| Thermal resistance, case to heatsink (RthCH) | 0.06 | °C/W | Per Diode, λgrease = 1 W/(m·K) |
| Module Characteristics | |||
| Isolation Voltage (VISO) | 4000 | V | (All Terminals Shorted), f=50Hz, 1minute |
| Case-To-Sink Thermal Resistance (RθCS) | 0.1 | °C/W | (Conductive Grease Applied) |
| Power Terminals Screw Torque | 2.5 - 5.0 | N·m | M6 |
| Mounting Screw Torque | 3.0 - 6.0 | N·m | M6 |
| Weight | 310 | g | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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