Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 441W |
| Td(off) | 262ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF |
| Input Capacitance(Cies) | 3.98nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA |
| Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 157pF |
| Reverse Recovery Time(trr) | 84ns |
| Switching Energy(Eoff) | 2.3mJ |
| Turn-On Energy (Eon) | 1.3mJ |
| Description | 441W 1.2kV TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG40T120HIRU2 |
| Package | TO-247 |
| Model Number | JNG40T120HIRU2 |
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Product Specification
| Pd - Power Dissipation | 441W | Td(off) | 262ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 93pF | Input Capacitance(Cies) | 3.98nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@1mA | Pulsed Current- Forward(Ifm) | 120A |
| Output Capacitance(Coes) | 157pF | Reverse Recovery Time(trr) | 84ns |
| Switching Energy(Eoff) | 2.3mJ | Turn-On Energy (Eon) | 1.3mJ |
| Description | 441W 1.2kV TO-247 Single IGBTs RoHS | Mfr. Part # | JNG40T120HIRU2 |
| Package | TO-247 | Model Number | JNG40T120HIRU2 |
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. They are designed for reliable and rugged performance with fast switching capabilities.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| IGBT Electrical Characteristics | BVCES | VGE= 0V, IC= 1mA | 1200 | - | - | V |
| ICES | VCE= 1200V, VGE= 0V | - | - | 10 | uA | |
| IGES | VGE= + 20V, VCE= 0V | - | - | + 200 | nA | |
| VGE(th) | VGE= VCE, IC= 1mA | 4.3 | - | 6.3 | V | |
| VCE(sat) | VGE=15V, IC= 40A | - | 1.7 | - | V | |
| Qg | VCC=960V VGE=15V IC=40A | - | 346 | - | nC | |
| Qge | - | 2.4 | - | nC | ||
| Qgc | - | 238 | - | nC | ||
| td(on) | VCC=600V VGE=15V IC=40A RG=5 Inductive Load TC=25 | - | 25 | - | ns | |
| tr | - | 28 | - | ns | ||
| td(off) | - | 262 | - | ns | ||
| tf | - | 149 | - | ns | ||
| Eon | - | 1.3 | - | mJ | ||
| Eoff | - | 2.3 | - | mJ | ||
| Ets | - | 3.6 | - | mJ | ||
| Cies | VCE=25V VGE=0V f = 1MHz | - | 3980 | - | pF | |
| Coes | - | 157 | - | pF | ||
| Cres | - | 93 | - | pF | ||
| Diode Electrical Characteristics | VF | IF=40A | - | 2.0 | 3.5 | V |
| trr | VCE = 600V IF= 40A diF/dt = 200A/us | - | 84 | - | ns | |
| Irr | - | 9.2 | - | A | ||
| Qrr | - | 215 | - | nC | ||
| Absolute Maximum Ratings | VCES | 1200 | V | |||
| VGES | + 20 | V | ||||
| IC (TC=25 ) | 80 | A | ||||
| IC (TC=100) | 40 | A | ||||
| ICM | (Note 1) | 160 | A | |||
| IF (TC=100 ) | 40 | A | ||||
| IFM | (Note 1) | 120 | A | |||
| tsc | 8 | us | ||||
| PD (TC=25 ) | 441 | W | ||||
| TJ | -55 | +175 | ||||
| Thermal Characteristics | Rth j-c (IGBT) | 0.34 | / W | |||
| Rth j-c (Diode) | 0.80 | / W | ||||
| Rth j-a | 40 | / W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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