Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 379ns |
| Pd - Power Dissipation | 1kW |
| Td(on) | 94ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 70pF |
| Input Capacitance(Cies) | 10.203nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@0.25mA |
| Gate Charge(Qg) | 330nC@15V |
| Pulsed Current- Forward(Ifm) | 560A |
| Output Capacitance(Coes) | 480pF |
| Reverse Recovery Time(trr) | 190ns |
| Switching Energy(Eoff) | 9.81mJ |
| Turn-On Energy (Eon) | 6.37mJ |
| Description | 1kW 650V TO-247P Single IGBTs RoHS |
| Mfr. Part # | IXXX160N65C4-HXY |
| Package | TO-247P |
| Model Number | IXXX160N65C4-HXY |
View Detail Information
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Product Specification
| Td(off) | 379ns | Pd - Power Dissipation | 1kW |
| Td(on) | 94ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 70pF | Input Capacitance(Cies) | 10.203nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@0.25mA | Gate Charge(Qg) | 330nC@15V |
| Pulsed Current- Forward(Ifm) | 560A | Output Capacitance(Coes) | 480pF |
| Reverse Recovery Time(trr) | 190ns | Switching Energy(Eoff) | 9.81mJ |
| Turn-On Energy (Eon) | 6.37mJ | Description | 1kW 650V TO-247P Single IGBTs RoHS |
| Mfr. Part # | IXXX160N65C4-HXY | Package | TO-247P |
| Model Number | IXXX160N65C4-HXY |
The IXXX160N65C4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding industrial uses.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 240 | A | ||
| IC | DC collector current(1) | TC = 100C | 160 | A | ||
| ICM | Pulsed collector current | TC = 25C | 560 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 240 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 160 | A | ||
| IFM | Diode pulsed current | TC = 25C | 560 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 1000 | W | ||
| Ptot | Power Dissipation | TC = 100C | 500 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.12 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.16 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 160A | 1.37 | 1.6 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 160A ,TVJ = 125C | 1.63 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 160A ,TVJ = 175C | 2.0 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 160A | 1.33 | 1.6 | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 160A ,TVJ = 125C | 1.37 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 160A ,TVJ = 175C | 1.4 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC =0.25mA | 4.2 | 5.2 | 6.2 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 160.0 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE = 20V , IC = 160A | 160 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 10203 | - | pF | |
| Coes | Output Capacitance | 480 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 70 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE =520V, IC = 160A | 330 | - | nC | |
| Qge | Gate to Emitter charge | 51 | - | nC | ||
| Qgc | Gate to Collector charge | 72 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VCC = 400 V, IC =160 A VGE = 15 V RG(on) = 10, RG(off) = 10 | 94 | - | ns | |
| tr | Turn-On Rise Time | 136 | - | ns | ||
| td(off) | Turn-Off DelayTime | 379 | - | ns | ||
| tf | Turn-Off Fall Time | 214 | - | ns | ||
| Eon | Turn-on energy | 6.37 | - | mJ | ||
| Eoff | Turn-off energy | 9.81 | - | mJ | ||
| Ets | Total switching energy | 16.18 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | TVJ = 25 C VCC = 550 V, IC =160 A VGE = 0 / 15 V RG(on) = 10 , RG(off) = 10 | 190 | - | ns | |
| Qrr | Reverse recovery charge | 3.09 | - | mC | ||
| Irrm | Peak reverse recovery current | 29 | - | A | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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