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Power semiconductor device Infineon IKD06N60RF TRENCHSTOP RC Series IGBT 600V 6A

China Power semiconductor device Infineon IKD06N60RF TRENCHSTOP RC Series IGBT 600V 6A

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Power semiconductor device Infineon IKD06N60RF TRENCHSTOP RC Series IGBT 600V 6A

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Pd - Power Dissipation	100W
Td(off)	106ns
Td(on)	7ns
Collector-Emitter Breakdown Voltage (Vces)	600V
Input Capacitance(Cies)	470pF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.3V@0.11mA
Gate Charge(Qg)	48nC@15V
Operating Temperature	-40℃~+175℃
Reverse Recovery Time(trr)	48ns
Switching Energy(Eoff)	90uJ
Turn-On Energy (Eon)	90uJ
Description	IGBT 600V 6A 100W Surface Mount TO-252
Mfr. Part #	IKD06N60RF
Package	TO-252
Model Number	IKD06N60RF

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Product Details
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Product Specification


Pd - Power Dissipation	100W	Td(off)	106ns
Td(on)	7ns	Collector-Emitter Breakdown Voltage (Vces)	600V
Input Capacitance(Cies)	470pF@25V	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.3V@0.11mA
Gate Charge(Qg)	48nC@15V	Operating Temperature	-40℃~+175℃
Reverse Recovery Time(trr)	48ns	Switching Energy(Eoff)	90uJ
Turn-On Energy (Eon)	90uJ	Description	IGBT 600V 6A 100W Surface Mount TO-252
Mfr. Part #	IKD06N60RF	Package	TO-252
Model Number	IKD06N60RF

Product Description

The IKD06N60RF is a TRENCHSTOP RC-Series IGBT with an integrated diode, designed for hard switching applications up to 30 kHz. It offers space-saving advantages and features optimized switching losses (Eon, Eoff, Qrr), smooth switching performance for low EMI, and a maximum junction temperature of 175C. This IGBT is suitable for domestic and industrial drives, including compressors, pumps, and fans.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOP RC-Series
Lead Plating: Pb-free
RoHS Compliant: Yes
MSL Rating: 1
Certifications: Qualified according to JEDEC for target applications

Technical Specifications

Type	V_CE	I_C	V_CEsat, T_vj=25C	T_vjmax	Marking	Package
IKD06N60RF	600V	6A	2.2V	175C	K06R60F	PG-TO252-3

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, Tc = 25C	I_C	12.0	A
DC collector current, Tc = 100C	I_C	6.0	A
Pulsed collector current	I_Cpuls	18.0	A
Diode forward current, Tc = 25C	I_F	12.0	A
Diode forward current, Tc = 100C	I_F	6.0	A
Diode pulsed current	I_Fpuls	18.0	A
Gate-emitter voltage	V_GE	20	V
Short circuit withstand time	t_SC	5	s
Power dissipation, Tc = 25C	P_tot	100.0	W
Operating junction temperature	T_vj	-40...+175	C
Storage temperature	T_stg	-55...+150	C
Soldering temperature		260	C

Thermal Resistance

Parameter	Symbol	Conditions	Unit	Value
IGBT thermal resistance, junction - case	R_th(j-c)		K/W	1.50
Diode thermal resistance, junction - case	R_th(j-c)		K/W	3.60
Thermal resistance, min. footprint junction - ambient	R_th(j-a)		K/W	75
Thermal resistance, 6cm Cu on PCB junction - ambient	R_th(j-a)		K/W	50

Electrical Characteristics (T_vj = 25C, unless otherwise specified)

Parameter	Symbol	Conditions	Unit	Min.	Typ.	Max.
Collector-emitter breakdown voltage	V_(BR)CES	V_GE = 0V, I_C = 0.20mA	V	600	-	-
Collector-emitter saturation voltage	V_CEsat	V_GE = 15.0V, I_C = 6.0A, T_vj = 25C	V	-	2.20	-
Collector-emitter saturation voltage	V_CEsat	V_GE = 15.0V, I_C = 6.0A, T_vj = 175C	V	-	2.30	2.50
Diode forward voltage	V_F	V_GE = 0V, I_F = 6.0A, T_vj = 25C	V	-	2.10	-
Diode forward voltage	V_F	V_GE = 0V, I_F = 6.0A, T_vj = 175C	V	-	2.00	2.40
Gate-emitter threshold voltage	V_GE(th)	I_C = 0.11mA, V_CE = V_GE	V	4.3	5.0	5.7
Zero gate voltage collector current	I_CES	V_CE = 600V, V_GE = 0V, T_vj = 25C	A	-	-	40
Zero gate voltage collector current	I_CES	V_CE = 600V, V_GE = 0V, T_vj = 175C	A	-	-	1000
Gate-emitter leakage current	I_GES	V_CE = 0V, V_GE = 20V	nA	-	-	100
Transconductance	g_fs	V_CE = 20V, I_C = 6.0A	S	-	2.9	-

Dynamic Characteristics (T_vj = 25C, unless otherwise specified)

Parameter	Symbol	Conditions	Unit	Min.	Typ.	Max.
Input capacitance	C_ies	V_CE = 25V, V_GE = 0V, f = 1MHz	pF	-	470	-
Output capacitance	C_oes		pF	-	24	-
Reverse transfer capacitance	C_res		pF	-	14	-
Gate charge	Q_G	V_CC = 480V, I_C = 6.0A, V_GE = 15V	nC	-	48.0	-
Internal emitter inductance	L_E	measured 5mm from case	nH	-	7.0	-
Short circuit collector current	I_C(SC)	V_GE = 15.0V, V_CC 400V, t_SC 5s, T_vj = 25C	A	-	46	-

Switching Characteristics, Inductive Load (T_vj = 25C)

Parameter	Symbol	Conditions	Unit	Min.	Typ.	Max.
Turn-on delay time	t_d(on)	V_CC = 400V, I_C = 6.0A, V_GE = 0.0/15.0V, R_G(on) = 23.0, R_G(off) = 23.0, L = 50nH, C = 30pF	ns	-	7	-
Rise time	t_r		ns	-	8	-
Turn-off delay time	t_d(off)		ns	-	106	-
Fall time	t_f		ns	-	22	-
Turn-on energy	E_on		mJ	-	0.09	-
Turn-off energy	E_off		mJ	-	0.09	-
Total switching energy	E_ts		mJ	-	0.18	-
Diode reverse recovery time	t_rr	V_R = 400V, I_F = 6.0A, di_F/dt = 770A/s	ns	-	48	-
Diode reverse recovery charge	Q_rr		C	-	0.16	-
Diode peak reverse recovery current	I_rrm		A	-	7.4	-
Diode peak rate of fall of reverse recovery current	di_r_r/dt		A/s	-	-195	-

Switching Characteristics, Inductive Load (T_vj = 175C)

Parameter	Symbol	Conditions	Unit	Min.	Typ.	Max.
Turn-on delay time	t_d(on)	V_CC = 400V, I_C = 6.0A, V_GE = 0.0/15.0V, R_G(on) = 23.0, R_G(off) = 23.0, L = 50nH, C = 30pF	ns	-	8	-
Rise time	t_r		ns	-	8	-
Turn-off delay time	t_d(off)		ns	-	115	-
Fall time	t_f		ns	-	35	-
Turn-on energy	E_on		mJ	-	0.15	-
Turn-off energy	E_off		mJ	-	0.13	-
Total switching energy	E_ts		mJ	-	0.28	-
Diode reverse recovery time	t_rr	V_R = 400V, I_F = 6.0A, di_F/dt = 770A/s	ns	-	74	-
Diode reverse recovery charge	Q_rr		C	-	0.34	-
Diode peak reverse recovery current	I_rrm		A	-	10.3	-
Diode peak rate of fall of reverse recovery current	di_r_r/dt		A/s	-	-177	-

2410121815_Infineon-IKD06N60RF_C536170.pdf

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