Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 300ns |
| Pd - Power Dissipation | 200W |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 170pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA |
| Operating Temperature | -55℃~+150℃ |
| Reverse Recovery Time(trr) | 210ns |
| Switching Energy(Eoff) | 2.33mJ |
| Turn-On Energy (Eon) | 1.62mJ |
| Input Capacitance(Cies) | 1.6nF |
| Pulsed Current- Forward(Ifm) | 100A |
| Output Capacitance(Coes) | 270pF |
| Description | 200W 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS |
| Mfr. Part # | JNG30N120HS3 |
| Package | TO-247 |
| Model Number | JNG30N120HS3 |
View Detail Information
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Product Specification
| Td(off) | 300ns | Pd - Power Dissipation | 200W |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 170pF | IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | Operating Temperature | -55℃~+150℃ |
| Reverse Recovery Time(trr) | 210ns | Switching Energy(Eoff) | 2.33mJ |
| Turn-On Energy (Eon) | 1.62mJ | Input Capacitance(Cies) | 1.6nF |
| Pulsed Current- Forward(Ifm) | 100A | Output Capacitance(Coes) | 270pF |
| Description | 200W 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS | Mfr. Part # | JNG30N120HS3 |
| Package | TO-247 | Model Number | JNG30N120HS3 |
The JIAEN JNG30N120HS3 is an NPT IGBT designed for high efficiency and lower losses in applications such as induction heating (IH), UPS, and general inverters, particularly those employing soft switching techniques. It offers high-speed switching capabilities and soft current turn-off waveforms.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VCES | 1200 | V | |||
| VGES | +30 | V | ||||
| IC (TC=25) | 50 | A | ||||
| IC (TC=100) | 30 | A | ||||
| Electrical Characteristics (IGBT) | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | VCE= 1200V, VGE= 0V | - | - | 250 | uA | |
| IGES | VGE=30V, VCE= 0V | - | - | 100 | nA | |
| VGE(th) | VGE= VCE, IC= 250uA | 4.0 | 5.0 | 6.0 | V | |
| VCE(sat) | VGE=15V, IC= 30A | - | 2.2 | 2.6 | V | |
| Qg | VCC=960V VGE=15V IC=30A | - | 165 | - | nC | |
| td(on) | VCC=600V VGE=15V IC=30A RG=10 Inductive Load TC=25 | - | 25 | - | ns | |
| tr | - | 40 | - | ns | ||
| td(off) | - | 300 | - | ns | ||
| tf | - | 170 | - | ns | ||
| Eon | - | 1.62 | - | mJ | ||
| Eoff | - | 2.33 | - | mJ | ||
| Ets | - | 3.95 | - | mJ | ||
| Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 1600 | - | pF |
| Coes | - | 270 | - | pF | ||
| Cres | - | 170 | - | pF | ||
| Diode Characteristics | VF | IF=30A | - | 2.15 | 2.7 | V |
| trr | VCE = 600V IF= 30A dIF/dt = 500A/us | - | 210 | - | ns | |
| Qrr | - | 2100 | - | nC | ||
| Thermal Characteristics | Rth j-c (IGBT) | 0.48 | / W | |||
| Rth j-c (Diode) | 0.95 | / W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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