Hefei Purple Horn E-Commerce Co., Ltd.
| Td(off) | 408ns |
| Td(on) | 355ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 46nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@6.14mA |
| Gate Charge(Qg) | 4.8uC |
| Operating Temperature | -40℃~+175℃ |
| Switching Energy(Eoff) | 24.4mJ |
| Turn-On Energy (Eon) | 29.6mJ |
| Description | IGBT 1.2kV 300A Through Hole,122x62.5mm |
| Mfr. Part # | FS300R12N3E7 |
| Package | Through Hole,122x62.5mm |
| Model Number | FS300R12N3E7 |
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Product Specification
| Td(off) | 408ns | Td(on) | 355ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | Input Capacitance(Cies) | 46nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@6.14mA | Gate Charge(Qg) | 4.8uC |
| Operating Temperature | -40℃~+175℃ | Switching Energy(Eoff) | 24.4mJ |
| Turn-On Energy (Eon) | 29.6mJ | Description | IGBT 1.2kV 300A Through Hole,122x62.5mm |
| Mfr. Part # | FS300R12N3E7 | Package | Through Hole,122x62.5mm |
| Model Number | FS300R12N3E7 |
The EconoPACK3 module features TRENCHSTOPIGBT7 technology and an emitter-controlled 7 diode, designed for high power and thermal cycling capability. It offers low VCE,sat, overload operation up to 175C, and solder contact technology. The module integrates an NTC temperature sensor and a copper base plate with an Al2O3 substrate for low thermal resistance. This product is qualified for industrial applications according to relevant IEC standards.
| Parameter | Symbol | Note or test condition | Values | Unit |
|---|---|---|---|---|
| General | ||||
| Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continuous DC collector current | ICDC | Tvj max = 175 C, TC = 70 C | 300 | A |
| Repetitive peak collector current | ICRM | tp limited by Tvj op | 600 | A |
| Gate-emitter peak voltage | VGES | 20 | V | |
| Stray inductance module | LsCE | 25 | nH | |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 1.8 | m |
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting torque for module mounting | M | M5, Screw | 3 to 6 | Nm |
| Weight | G | 300 | g | |
| IGBT, Inverter | ||||
| Collector-emitter saturation voltage | VCE sat | IC = 300 A, VGE = 15 V, Tvj = 25 C | 1.50 to 1.75 | V |
| Collector-emitter saturation voltage | VCE sat | IC = 300 A, VGE = 15 V, Tvj = 175 C | 1.75 | V |
| Gate threshold voltage | VGEth | IC = 6.14 mA, VCE = VGE, Tvj = 25 C | 5.15 to 6.45 | V |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 4.8 | C |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 46 | nF |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.23 | nF |
| Turn-on delay time (inductive load) | tdon | IC = 300 A, VCE = 600 V, VGE = 15 V, RGon = 1.1 , Tvj = 175 C | 0.404 | s |
| Rise time (inductive load) | tr | IC = 300 A, VCE = 600 V, VGE = 15 V, RGon = 1.1 , Tvj = 175 C | 0.075 | s |
| Turn-off delay time (inductive load) | tdoff | IC = 300 A, VCE = 600 V, VGE = 15 V, RGoff = 1.1 , Tvj = 175 C | 0.545 | s |
| Fall time (inductive load) | tf | IC = 300 A, VCE = 600 V, VGE = 15 V, RGoff = 1.1 , Tvj = 175 C | 0.408 | s |
| Turn-on energy loss per pulse | Eon | IC = 300 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 1.1 , Tvj = 175 C | 49.5 | mJ |
| Turn-off energy loss per pulse | Eoff | IC = 300 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGoff = 1.1 , Tvj = 175 C | 48 | mJ |
| SC data | ISC | VGE 15 V, VCC = 800 V, tP 7 s, Tvj=175 C | 990 | A |
| Thermal resistance, junction to case | RthJC | per IGBT | 0.169 | K/W |
| Thermal resistance, case to heat sink | RthCH | per IGBT, grease = 1 W/(mK) | 0.0700 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 175 | C | |
| Diode, Inverter | ||||
| Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continuous DC forward current | IF | 300 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 600 | A |
| I2t - value | I2t | tP = 10 ms, VR = 0 V, Tvj = 175 C | 5110 | As |
| Forward voltage | VF | IF = 300 A, VGE = 0 V, Tvj = 175 C | 1.60 | V |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 300 A, VGE = -15 V, Tvj = 175 C | 192 | A |
| Recovered charge | Qr | VR = 600 V, IF = 300 A, VGE = -15 V, Tvj = 175 C | 52.9 | C |
| Reverse recovery energy | Erec | VR = 600 V, IF = 300 A, VGE = -15 V, Tvj = 175 C | 18.2 | mJ |
| Thermal resistance, junction to case | RthJC | per diode | 0.276 | K/W |
| Thermal resistance, case to heat sink | RthCH | per diode, grease = 1 W/(mK) | 0.0700 | K/W |
| Temperature under switching conditions | Tvj op | -40 to 175 | C | |
| NTC-Thermistor | ||||
| Rated resistance | R25 | TNTC = 25 C | 5 | k |
| Deviation of R100 | R/R | TNTC = 100 C, R100 = 493 | -5 to 5 | % |
| Power dissipation | P25 | TNTC = 25 C | 20 | mW |
| B-value | B25/50 | 3375 | K | |
| B-value | B25/80 | 3411 | K | |
| B-value | B25/100 | 3433 | K | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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