Hefei Purple Horn E-Commerce Co., Ltd.
| Pd - Power Dissipation | 140W |
| Td(off) | 255ns |
| Td(on) | 25ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.2mA |
| Gate Charge(Qg) | 89nC@15V |
| Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 89ns |
| Switching Energy(Eoff) | 200uJ |
| Turn-On Energy (Eon) | 500uJ |
| Input Capacitance(Cies) | 2.13nF |
| Pulsed Current- Forward(Ifm) | 30A |
| Output Capacitance(Coes) | 22pF |
| Description | 140W 650V TO-247-3 Single IGBTs RoHS |
| Mfr. Part # | IKWH20N65WR6 |
| Package | TO-247-3 |
| Model Number | IKWH20N65WR6 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 140W | Td(off) | 255ns |
| Td(on) | 25ns | Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 9pF | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@0.2mA |
| Gate Charge(Qg) | 89nC@15V | Operating Temperature | -40℃~+175℃ |
| Reverse Recovery Time(trr) | 89ns | Switching Energy(Eoff) | 200uJ |
| Turn-On Energy (Eon) | 500uJ | Input Capacitance(Cies) | 2.13nF |
| Pulsed Current- Forward(Ifm) | 30A | Output Capacitance(Coes) | 22pF |
| Description | 140W 650V TO-247-3 Single IGBTs RoHS | Mfr. Part # | IKWH20N65WR6 |
| Package | TO-247-3 | Model Number | IKWH20N65WR6 |
The TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. It features a monolithic diode optimized for PFC and welding applications, stable temperature behavior, very low VCEsat, and low Eoff. The product also boasts easy parallel switching capability due to the positive temperature coefficient of VCEsat and low temperature dependence of VCEsat and Esw.
| Parameter | Symbol | Note or test condition | Values Unit | Min. | Typ. | Max. |
| IGBT | ||||||
| Collector-emitter voltage | VCE | Tvj 25 C | 650 V | |||
| DC collector current, limited by Tvjmax | IC | Tc = 25 C | 55 A | |||
| Tc = 100 C | 35 A | |||||
| Pulsed collector current, tp limited by Tvjmax | ICpulse | 60 A | ||||
| Gate-emitter voltage | VGE | 20 V | ||||
| Transient gate-emitter voltage | VGE | tp 10 s, D < 0.01 | 30 V | |||
| Power dissipation | Ptot | Tc = 25 C | 140 W | |||
| Tc = 100 C | 70 W | |||||
| Collector-emitter breakdown voltage | VBRCES | IC = 0.2 mA, VGE=0 V | 650 V | |||
| Collector-emitter saturation voltage | VCEsat | IC = 20 A, VGE = 15 V | 1.35 | 1.7 V | ||
| Tvj = 175 C | 1.6 | |||||
| Gate-emitter threshold voltage | VGEth | IC = 0.2 mA, VCE = VGE | 3.2 | 4 | 4.8 V | |
| Zero gate-voltage collector current | ICES | VCE = 650 V, VGE=0 V | 40 A | |||
| Tvj = 175 C | 0.5 mA | |||||
| Gate-emitter leakage current | IGES | VCE=0 V, VGE = 20 V | 100 nA | |||
| Transconductance | gfs | IC = 20 A, VCE = 20 V | 50 S | |||
| Input capacitance | Cies | VCE = 25 V, VGE=0 V, f = 100 kHz | 2130 pF | |||
| Output capacitance | Coes | VCE = 25 V, VGE=0 V, f = 100 kHz | 22 pF | |||
| Reverse transfer capacitance | Cres | VCE = 25 V, VGE=0 V, f = 100 kHz | 9 pF | |||
| Gate charge | QG | IC = 20 A, VGE = 15 V, VCC = 520 V | 89 nC | |||
| Turn-on delay time | td(on) | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 25 | ns | ||
| Tvj = 175 C, IC = 20 A | 22 | ns | ||||
| Rise time (inductive load) | tr | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 13 | ns | ||
| Tvj = 175 C, IC = 20 A | 15 | ns | ||||
| Turn-off delay time | td(off) | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 255 | ns | ||
| Tvj = 175 C, IC = 20 A | 290 | ns | ||||
| Fall time (inductive load) | tf | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 17 | ns | ||
| Tvj = 175 C, IC = 20 A | 17 | ns | ||||
| Turn-on energy | Eon | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 0.5 | mJ | ||
| Tvj = 175 C, IC = 20 A | 0.62 | mJ | ||||
| Turn-off energy | Eoff | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 0.2 | mJ | ||
| Tvj = 175 C, IC = 20 A | 0.35 | mJ | ||||
| Total switching energy | Ets | VCC = 400 V, VGE = 0/15 V, RG(on) = 24 , RG(off) = 24 , L = 30 nH, C = 11 pF, IC = 20 A | 0.7 | mJ | ||
| Tvj = 175 C, IC = 20 A | 0.97 | mJ | ||||
| Operating junction temperature | Tvj | -40 to 175 C | ||||
| Diode | ||||||
| Repetitive peak reverse voltage | VRRM | Tvj 25 C | 650 V | |||
| Diode forward current, limited by Tvjmax | IF | Tc = 25 C | 17 A | |||
| Tc = 100 C | 10 A | |||||
| Diode pulsed current, tp limited by Tvjmax | IFpulse | 30 A | ||||
| Diode forward voltage | VF | IF = 8.5 A | 1.3 | 1.6 V | ||
| Tvj = 175 C | 1.35 | |||||
| Diode reverse recovery time | trr | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 89 | ns | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 92 | ns | ||||
| Diode reverse recovery charge | Qrr | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 1 | C | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 1.7 | C | ||||
| Diode peak reverse recovery current | Irrm | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 23 | A | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 29.1 | A | ||||
| Diode peak rate of fall of reverse recovery current | dirr/dt | VR = 400 V, IF = 10 A, -diF/dt = 1340 A/s | 3330 | A/s | ||
| Tvj = 175 C, IF = 10 A, -diF/dt = 1300 A/s | 775 | A/s | ||||
| Operating junction temperature | Tvj | -40 to 175 C | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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