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  3. Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge
China Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge
China Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge

  1. China Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge

Infineon IGW50N65F5 650V IGBT Featuring High Speed Switching and Low Gate Charge

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Td(off) 175ns
Pd - Power Dissipation 305W
Td(on) 21ns
Collector-Emitter Breakdown Voltage (Vces) 650V
Input Capacitance(Cies) 3nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 3.2V@0.5mA
Gate Charge(Qg) 120nC@15V
Operating Temperature -40℃~+175℃
Switching Energy(Eoff) 160uJ
Turn-On Energy (Eon) 490uJ
Description IGBT 650V 80A 305W Through Hole TO-247-3
Mfr. Part # IGW50N65F5
Package TO-247-3
Model Number IGW50N65F5

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  1. Product Details
  2. Company Details

Product Specification

Td(off) 175ns Pd - Power Dissipation 305W
Td(on) 21ns Collector-Emitter Breakdown Voltage (Vces) 650V
Input Capacitance(Cies) 3nF@25V Gate-Emitter Threshold Voltage (Vge(th)@Ic) 3.2V@0.5mA
Gate Charge(Qg) 120nC@15V Operating Temperature -40℃~+175℃
Switching Energy(Eoff) 160uJ Turn-On Energy (Eon) 490uJ
Description IGBT 650V 80A 305W Through Hole TO-247-3 Mfr. Part # IGW50N65F5
Package TO-247-3 Model Number IGW50N65F5

Product Overview

The IGW50N65F5 is a high-speed 650V IGBT from Infineon's TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, with low gate charge (QG) and a maximum junction temperature of 175C. This IGBT is an ideal fit for boost converters when paired with SIC Schottky Diodes and is qualified according to JEDEC standards for industrial applications. It is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM 5
  • Certifications: RoHS compliant, JEDEC qualified

Technical Specifications

TypeVCEIC (TC=25C)VCEsat (Tvj=25C)TvjmaxPackage
IGW50N65F5650V80.0A1.6V175CPG-TO247-3

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE650V
DC collector current, limited by Tvjmax (TC = 25C)IC80.0A
DC collector current, limited by bondwire (TC = 100C)IC56.0A
Pulsed collector current, tp limited by TvjmaxICpuls150.0A
Turn off safe operating area--150.0A
Gate-emitter voltageVGE20V
Transient Gate-emitter voltageVGE30V
Power dissipation (TC = 25C)Ptot305.0W
Power dissipation (TC = 100C)Ptot152.5W
Operating junction temperatureTvj-40...+175C
Storage temperatureTstg-55...+150C
Soldering temperature-260C
Mounting torque, M3 screwM0.6Nm

Thermal Resistance

ParameterSymbolConditionsMax. ValueUnit
IGBT thermal resistance, junction - caseRth(j-c)-0.50K/W
Thermal resistance junction - ambientRth(j-a)-40K/W

Electrical Characteristics (at Tvj = 25C, unless otherwise specified)

ParameterSymbolConditionsmin.typ.max.Unit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650--V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 50.0A-1.602.10V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 50.0A, Tvj = 125C-1.80-V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 50.0A, Tvj = 175C-1.90-V
Gate-emitter threshold voltageVGE(th)IC = 0.50mA, VCE = VGE3.24.04.8V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 25C--40.0A
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 175C--2000.0A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V--100nA
TransconductancegfsVCE = 20V, IC = 50.0A-62.0-S

Dynamic Characteristic

ParameterSymbolConditionsmin.typ.max.Unit
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-3000-pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-50-pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-11-pF
Gate chargeQGVCC = 520V, IC = 50.0A, VGE = 15V-120.0-nC
Internal emitter inductanceLEmeasured 5mm from case-13.0-nH

Switching Characteristic, Inductive Load (Tvj = 25C)

ParameterSymbolConditionsmin.typ.max.Unit
Turn-on delay timetd(on)VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-21-ns
Rise timetrVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-15-ns
Turn-off delay timetd(off)VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-175-ns
Fall timetfVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-18-ns
Turn-on energyEonVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-0.49-mJ
Turn-off energyEoffVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-0.16-mJ
Total switching energyEtsVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-0.65-mJ
Turn-on delay timetd(on)VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-19-ns
Rise timetrVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-4-ns
Turn-off delay timetd(off)VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-195-ns
Fall timetfVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-10-ns
Turn-on energyEonVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-0.11-mJ
Turn-off energyEoffVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-0.04-mJ
Total switching energyEtsVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-0.15-mJ

Switching Characteristic, Inductive Load (Tvj = 150C)

ParameterSymbolConditionsmin.typ.max.Unit
Turn-on delay timetd(on)VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-20-ns
Rise timetrVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-15-ns
Turn-off delay timetd(off)VCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-202-ns
Fall timetfVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-3-ns
Turn-on energyEonVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-0.68-mJ
Turn-off energyEoffVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-0.21-mJ
Total switching energyEtsVCC = 400V, IC = 25.0A, VGE = 0.0/15.0V, RG = 12.0-0.89-mJ
Turn-on delay timetd(on)VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-18-ns
Rise timetrVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-5-ns
Turn-off delay timetd(off)VCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-245-ns
Fall timetfVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-12-ns
Turn-on energyEonVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-0.18-mJ
Turn-off energyEoffVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-0.06-mJ
Total switching energyEtsVCC = 400V, IC = 6.0A, VGE = 0.0/15.0V, RG = 12.0-0.24-mJ

Applications

  • Solar converters
  • Uninterruptible power supplies
  • Welding converters
  • Mid to high range switching frequency converters

Package Pin Definition

  • Pin 1 - gate
  • Pin 2 & backside - collector
  • Pin 3 - emitter

2410121744_Infineon-IGW50N65F5_C536107.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory

  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification：

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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